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检索条件"作者=mohamed Henini"
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CuO–TiO_(2) based self-powered broad band photodetector
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Nano Materials Science 2024年 第3期6卷 345-354页
作者: Chiranjib Ghosh Arka Dey Iman Biswas Rajeev Kumar Gupta Vikram Singh Yadav Ashish Yadav Neha Yadav Hongyu Zheng mohamed henini Aniruddha Mondal Department of Physics National Institute of Technology DurgapurWest BengalIndia Department of Physics University of Petroleum&Energy Studies DehradunUttarakhandIndia Babasaheb Bhimrao Ambedkar University Lucknow226031India Center for Advanced Laser Manufacturing(CALM) Shandong University of TechnologyZibo255000PR China School of Physics and Astronomy University of NottinghamNottinghamNG72RDUnited Kingdom
An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is *** CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube fu... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
CuO–TiO2 based self-powered broad band photodetector
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纳米材料科学 2024年 第3期 345页
作者: Chiranjib Ghosh Arka Dey Iman Biswas Rajeev Kumar Gupta Vikram Singh Yadav Ashish Yadav Neha Yadav Hongyu Zheng mohamed henini Aniruddha Mondal
来源: 博看期刊 评论
Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters
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Journal of Semiconductors 2020年 第10期41卷 45-49页
作者: Elyes Garoudja Walid Filali Slimane Oussalah Noureddine Sengouga mohamed henini Plateforme Technologique de Microfabrication Centre de Développement des Technologies Avancéescité20 août 1956Baba HassenAlgiersAlgeria Microelectronics and Nanotechnology Division Centre de Développement des Technologies Avancéescité20 août 1956Baba HassenAlgiersAlgeria Laboratory of Metallic and Semiconducting Materials Universitéde BiskraB.P 45507000 Biskra RPAlgeria School of Physics and Astronomy Nottingham Nanotechnology and Nanoscience CenterUniversity of NottinghamNottinghamNG72RDUK
In this work,forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67)As Schottky diode were measured at temperature ranges from 100 to 300 *** main parameters of this Schottky diode,such as t... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论