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From Solid Carbon Sources to Graphene

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Chinese Journal of Chemistry 2016年第1期34卷 32-40页

作者： Tao Liang Yuhan Kong Hongzheng Chen mingsheng xu State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China

Chemical vapor deposition on metal substrates using gaseous hydrocarbon as carbon feedstock has proven to be a feasible way for synthesis of large-area and uniform graphene films. Meanwhile, rearrangement of amorphous carbon species extracted from solid carbon sources into crystalline graphene not only offers an alternative route for graphene growth but also provides a powerful tool to excavate the underlying mechanisms of graphene formation. In this review, we discuss the processes of extracting carbon species from various solid carbon sources to form gra- phene. We summarize the typical steps of solid carbon sources to graphene transition and evaluate the resultant graphene film quality with regard to electrical performance. Unveiling the detailed solid carbon to graphene transition process paves the way for a reproducible production of graphene with controlled layer number, defect type and density, toward the final end of graphene＇s commercial utilizations with low cost.

关键词： solid carbon graphene physical vapor deposition

Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe_(2) on SOI

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Nano Research 2023年第5期16卷 7559-7567页

作者： Yexin Chen Qinghai Zhu Xiaodong Zhu Yijun Sun Zhiyuan Cheng Jing xu mingsheng xu School of Micro-Nano Electronics State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China College of Information Science&Electronic Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Ocean Observation-Imaging Testbed of Zhejiang Province Ocean CollegeZhejiang UniversityZhoushan 316021China

Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent ***,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μ*** PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate *** responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm ***,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel *** architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.

关键词： two-dimensional PtSe_(2) silicon-on-insulator(SOI) heterojunction phototransistor gate voltage modulation

High performance IEICO-4F/WSe_(2)heterojunction photodetector based on photoluminescence quenching behavior

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Nano Research 2022年第9期15卷 8595-8602页

作者： Qinghai Zhu Yexin Chen Tianyi Chen Lijian Zuo Yijun Sun Rong Wang mingsheng xu School of Micro-Nano Electronics State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Department of Polymer Science and Engineering State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China College of Information Science&Electronic Engineering Zhejiang University38 Zheda RoadHangzhou 310027China ZJU Hangzhou Global Sci&Technol Innovation Centre Adv Semiconductor Research InstituteHangzhou 311215China

Heterostructure is the basic building block for functional optoelectronic *** consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attracting great interest for highperformance ***,how to design heterostructure for highly efficient optoelectronic devices remains a big *** we design high-performance organic semiconductor/WSe_(2)heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IEICO-4F)organic semiconductors with various thicknesses and monolayer WSe_(2).With the increase of IEICO-4F layer thickness,the photoluminescence(PL)characteristics of WSe_(2)could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital(LUMO)level of IEICO-4F to the conduction band minimum(CBM)of WSe_(2).Benefiting from the exquisite charge transfer behavior,the IEICO-4F/WSe_(2)heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65×10^(11)Jones at incident light of 808 *** work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe_(2)heterojunction,thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures.

关键词： tungsten diselenide organic semiconductor type-II heterojunction photoluminescence quenching photodetector

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei xuE mingsheng xu Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

One-pot synthesis of CoO-ZnO/rGO supported on Ni foam for high-performance hybrid supercapacitor with greatly enhanced cycling stability

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Chinese Chemical Letters 2021年第6期32卷 2027-2032页

作者： mingsheng xu Mingze Sun Sajidur Rehman Kangkang Ge Xiaolong Hu Haizhen Ding Jichang Liu Hong Bi School of Chemistry and Chemical Engineering Anhui UniversityHefei 230601China State Key Laboratory of Chemical Engineering East China University of Science and TechnologyShanghai 200237China

The high specific capacitance along with good cycling stability are crucial for practical applications of supercapacitors,which always demands high-performance and stable electrode *** this work,we report a series of ternary composites of CoO-ZnO with different fractions of reduced graphene oxide(rGO)synthesized by in-situ growth on nickel foam,named as CZG-1,2 and 3,*** sort of binder-free electrodes presents excellent electrochemical properties as well as large capacitance due to their low electrical resistance and high oxygen ***,the sample of CZG-2(CoO-ZnO/rGO 20 mg)in a nanoreticular structure shows the best electrochemical performance with a maximum specific capacitance of 1951.8 F/g(216.9 mAh/g)at a current intensity of 1 A/*** CZG-2-based hybrid supercapacitor delivers a high energy density up to 45.9 Wh/kg at a high power density of 800 W/kg,and kept the capacitance retention of 90.1%over 5000 charge-discharge cycles.

关键词： Supercapacitor Metal oxide Graphene oxide Energy density Cycling stability

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Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer

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Nano Research 2021年第10期14卷 3616-3620页

作者： Susu Yang Houfu Song Yan Peng Lu Zhao Yuzhen Tong Feiyu Kang mingsheng xu Bo Sun Xinqiang Wang State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Dongguan Institute of Opto-Electronics Peking UniversityDongguan 523808China Tsinghua-Berkeley Shenzhen Institute Tsinghua UniversityShenzhen 518055China Institute of Novel Semiconductors and State Key Laboratory of Crystal Material Shandong UniversityJinan 250100China Tsinghua Shenzhen International Graduate School and Guangdong Provincial Key Laboratory of Thermal Management Engineering&MaterialsTsinghua UniversityShenzhen 518055China Laboratory of Advanced Materials School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Institute of Novel Semiconductors and School of Microelectronics Shandong UniversityJinan 250100China

Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In this work,we experimentally measured thermal boundary conductance(TBC)at interfaces between GaN and the substrates with AuSn alloy as a commonly-used adhesive layer by time-domain thermoreflectance(TDTR).We find that the TBCs of GaN/Ti/AuSn/Ti/Si,GaN/Ti/AuSn/Ti/SiC,and GaN/Ti/AuSn/Ti/diamond,are 16.5,14.8,and 13.2 MW·m^(-2)·K^(-1)at room temperature,*** measured results show that the TBC of GaN/Ti/AuSn/Ti/SiC interface is inferior to the TBC of pristine GaN/SiC interface,due to the large mismatch of phonon modes between AuSn/Ti and substrates,shown as the difference of Debye temperature of two ***,we measured the TBC at interface between GaN and thermal conductive substrates,and provided a guideline for designing the interface between GaN and substrate at HEMT from a thermal management point of view.

关键词： GaN thermal boundary conductance time-domain thermoreflectance(TDTR) diffuse mismatch model

Synthesis of Sn nanocluster@carbon dots for photodynamic therapy application

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Chinese Chemical Letters 2021年第7期32卷 2287-2291页

作者： Xiaolong Hu Shuna Wang Qinghua Luo Binghui Ge Qin Cheng Chen Dong Jiahui xu Haizhen Ding mingsheng xu Antonio Claudio Tedesco Xin Huang Renquan Zhang Hong Bi School of Chemistry and Chemical Engineering Anhui Key Laboratory of Modem BiomanufacturingAnhui UniversityHefei 230601China Institutes of Physical Science and Information Technology Anhui UniversityHefei 230601China Department of Chemistry Center of Nanotechnology and Tissue Engineering-Photobiology and Photomedicine Research GroupFaculty of PhilosophySciences and Letters of Ribeirao PretoUniversity of Sao PauloRibeirao PretoSao Paulo 14040-901Brazil Department of Thoracic Surgery First Affiliated Hospital of Anhui Medical UniversityHefei 230032China

Recently,photodynamic therapy(PDT)has been extensively applied in clinical and coadjuvant treatment of various kinds of ***,the photosensitizer(PS)of PDT still lack of high production of singlet oxygen(^(1)O_(2)),low cytotoxicity and high ***,we propose a facile method for establishing a new core-shell structured Sn nanocluster@carbon dots(CDs)***,Sn^(4+)@S-CDs complex is synthesized using the sulfur-doped CDs(S-CDs)and SnCl4 as raw materials,and subsequently the new PS(Sn nanocluster@CDs)is obtained after vaporization of Sn4+@S-CDs ***,the obtained Sn nanocluster@CDs show an enhanced fluorescence as well as a higher ^(1)O_(2) quantum yield(QY)than *** high ^(1)O_(2) QY(58.3%)irradiated by the LED light(400-700 nm,40 mW/cm^(2)),induce the reduction of 4 T1 cancer cells viability by 25%.More intriguingly,no visible damage happens to healthy cells,with little impact on liver tissue due to renal excretion,both in vitro and in vivo experiments demonstrate that Sn nanocluster@CDs may become a promising PS,owning a high potential for application in PDT.

关键词： Sn nanocluster@CDs Photodynamic therapy Photosensitizer Biocompatibility Singlet oxygen

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Erratum to:Improving near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity(vol 62,issue 10,page 1470,2019)

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Science China Materials 2021年第12期64卷 3138-3139页

作者： Shuangyi Zhao Yue Wang Wen Huang Hao Jin Peiwen Huang Hu Wang Kun Wang Dongsheng Li mingsheng xu Deren Yang Xiaodong Pi State Key Laboratory of Silicon Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhouZhejiang 310027China School of Information Science and Electronic Engineering Zhejiang UniversityHangzhouZhejiang 310027China

In the version of the article originally published in the volume 62,issue 10,2019 of *** Mater,(page 1470-1478,https://***/10.1007/s40843-019-9437-9),wrong images of Figs 3 and 4 were *** corrected version appears bel... 详细信息

关键词： plasticity originally wrong

Study on Enzymatic Hydrolysis Technology and Antioxidant Activity of Glutinous Rice Glutinous Enzymatic Processes and Antioxidant Activity

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Agricultural Biotechnology 2013年第4期2卷 57-60页

作者： Hongrui LI Jinshen MAI mingsheng xu Jun TAO College of Food Science and Engineering Jiangxi Agricultural University

[ Objective] This study aimed to investigate enzymatic hydrolysis technology of glutinous rice and the oxidation resistance activity of the enzymatic hydrolysis solution. [ Method ] White glutinous rice was hydrolyzed using four kinds of proteases including neutral protease, alkaline protease, papain and trypsin. Using the scavenging rate of hydroxyl radical （ ·OH） as an indicator and appropriate protease as hydrolytic enzyme, the effects of protein substrate concentration, enzyme dosage, enzymatic hydrolysis temperature and initial pH on the abilities of proteases to scavenge hydroxyl radical from enzymatic hydrolysis solution of glutinous rice were investigated. Based on single-factor test, L9 （34） orthogonal experimental design was adopted, to determine the optimal enzymatic hydrolysis condi- tions leading to the highest oxidation resistance activity of enzymatic hydrolysis solution. [ Result] The optimized process parameters for enzymatic hydrolysis of glu- tinous rice protein with neutral protease were： protein substrate concentration of 2%, enzyme dosage of 24 000 U/g protein （protein meter）, enzymatic hydrolysis temperature of 55 ℃, initial pH of 8.0, and enzymatic hydrolysis duration of 0.5 h; under these conditions, the hydroxyl radical scavenging rate could reach 56. 05% ; protein substrate concentration, enzyme dosage, enzymatic hydrolysis temperature and initial pH had extremely significant effects on the hydroxyl radical scavenging rate. In addition, the activities of antioxidant peptides in glutinous rice hydrolysates were well maintained within a temperature range of 60 - 100℃. [Condusion] The study produced theoretical feasibility reference for the production of functional base powder by spray drying.

关键词： Glutinous rice Enzymatic hydrolysis technology Bioactive peptides Hydroxyl radical Oxidation resistance