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Structural and Optical Characterization of Indium Zinc Oxynitride Thin Films

材料科学与工程（中英文A版） 2014年第3期4卷 91-98页

作者： Jose Juan Ortega Sigala Maria Leticia Perez Arrieta Hugo TototzintleHuitle miguel angel aguilar frutis Ciro Falcony Victor Hugo Mendez Garcia Jose de Jesus Araiza Ibarra Academic Unit of Physics UAZ Zacatecas C.P. 98060 Me~xico CIACyT UASLP San Luis Potosl C.P. 78210 Mexico CICATA 1PN Mexico D.F. C.P. 11500 Mexieo Department of Physics CINVESTA V IPN Mexico D.F. C.P. 07360 Mexico

Indium zinc oxynitride (IZON) thin films were deposited on Si(100) substrates by RF reactive magnetron sputtering at different substrate temperature to study their structural and optical properties. All the films were deposited in a reactive atmosphere of nitrogen and argon. As precursor material, an IZO target (In 2 O 3 -ZnO, 90-10 wt%) with a purity of 99.99% was used. The crystalline structure of the films was analyzed by X-Ray diffraction technique (XRD), the deposited IZON thin films were practically amorphous with some polycrystalline contents for the films deposited at 100 °C and 300 °C. The refractive index and the extinction coefficient had been obtained from Spectral Ellipsometry (SE) analyses using the Classical and Adachi models, both results were qualitatively and quantitatively approximate. These optical results were analyzed and used to propose roughness values of the films surface, through of an appropriate proposal of the structure of the films. The roughness values obtained from optical models were compared with the morphological results studied by Atomic Force Microscopy (AFM), and the roughness values, obtained by direct and indirect measure, were consistent between them. The incorporated nitrogen reduced the typical crystallization of IZO and favored the deposition of transparent thin films with very flat surfaces, these results shows that the IZON has an ideal amorphous material for applications as conductive oxynitride layers.

关键词：氧化锌薄膜氧氮化物晶体结构光学特性 Si(100) 椭圆偏振光谱法薄膜沉积反应磁控溅射

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