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Optical simulation of external quantum efficiency spectra of CuIn_(1-x)Ga_xSe_2 solar cells from spectroscopic ellipsometry inputs

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journal of Energy Chemistry 2018年第4期27卷 1151-1169页

作者： Abdel-Rahman A.Ibdah Prakash Koirala Puruswottam Aryal Puja Pradhan michael j.heben Nikolas j.Podraza Sylvain Marsillac Robert W.Collins Department of Physics & Astronomy and Center for Photovoltaics Innovation & Commercialization University of Toledo Virginia Institute of Photovoltaics Old Dominion University

Applications of in-situ and ex-situ spectroscopic ellipsometry （SE） are presented for the development of parametric expressions that define the real and imaginary parts （ε1, ε2） of the complex dielectric function spectra of thin film solar cell components. These spectra can then be utilized to analyze the structure of complete thin film solar cells. Optical and structural/compositional models of complete solar cells developed through least squares regression analysis of the SE data acquired for the complete cells enable simulations of external quantum efficiency （EQE） without the need for variable parameters. Such simulations can be compared directly with EQE measurements. From these comparisons, it becomes possible to understand in detail the origins of optical and electronic gains and losses in thin film photovoltaics （PC） technologies and, as a result, the underlying performance limitations. In fact, optical losses that occur when above-bandgap photons are not absorbed in the active layers can be distinguished from electronic losses when electron-hole pairs generated in the active layers are not collected. This overall methodology has been applied to copper indium-gallium diselenide （Culn1-xGaxSe2; CIGS） solar cells, a key commercialized thin film PV technology. CIGS solar cells with both standard thickness （〉2 μm） and thin （〈1 μm） absorber layers are studied by applying SE to obtain inputs for EQE simulations and enabling comparisons of simulated and measured EQE spectra. SE data analysis is challenging for CIGS material components and solar cells because of the need to develop an appropriate （ε1, ε2） database for the CIGS alloys and to extract absorber layer Ga profiles for accurate structural/compositional models. For cells with standard thickness absorbers, excellent agreement is found between the simulated and measured EQE, the latter under the assumption of 100% collection from the active layers, which include the CIGS bulk and CIGS/CdS heterojunction inter

关键词： Solar cells Thin-film Ellipsometry Spectroscopic Culn1-xGaxSe2(CIGS) Optical properties Quantum efficiency External Simulation Solar-cell

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