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Electrically-driven ultrafast out-of-equilibrium light emission from hot electrons in suspended graphene/hBN heterostructures

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International Journal of Extreme Manufacturing 2024年第1期6卷 328-338页

作者： Qiang Liu Wei Xu Xiaoxi Li Tongyao Zhang Chengbing Qin Fang Luo Zhihong zhu Shiqiao Qin mengjian zhu Kostya S Novoselov College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices National University of Defense TechnologyChangshaHunan 410073People’s Republic of China Nanhu Laser Laboratory National University of Defense TechnologyChangshaHunan 410073People’s Republic of China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006People’s Republic of China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006People’s Republic of China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006People’s Republic of China Institute for Functional Intelligent Materials National University of SingaporeSingapore 117544Singapore Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and *** record-high carrier mobility and ultrafast carrier dynamics of graphene make it promising as an atomically thin light emitter which can be further integrated into arbitrary platforms by van der Waals ***,due to the zero bandgap,graphene is difficult to emit light through the interband recombination of carriers like conventional ***,we demonstrate ultrafast thermal light emitters based on suspended graphene/hexagonal boron nitride(Gr/hBN)*** in biased graphene are significantly heated up to 2800 K at modest electric fields,emitting bright photons from the near-infrared to the visible spectral *** eliminating the heat dissipation channel of the substrate,the radiation efficiency of the suspended Gr/hBN device is about two orders of magnitude greater than that of graphene devices supported on SiO2or *** demonstrate that hot electrons and low-energy acoustic phonons in graphene are weakly coupled to each other and are not in full thermal *** cooling ofhigh-temperature hot electrons to low-temperature acoustic phonons is enabled by the significant near-field heat transfer at the highly localized Gr/hBN interface,resulting in ultrafast thermal emission with up to 1 GHz bandwidth under electrical *** is found thatsuspending the Gr/hBN heterostructures on the SiO2trenches significantly modifies the light emission due to the formation of the optical cavity and showed a~440%enhancement inintensity at the peak wavelength of 940 nm compared to the black-body thermal *** demonstration of electrically driven ultrafast light emission from suspended Gr/hBNheterostructures sheds the light on applications of graphene heterostructures in photonicintegrated circuits,such as broadband light sources and ultrafast thermo-optic phase modulat

关键词： suspended graphene ultrafast light emitter van der Waals heterostructures thermal radiation electron–phonon interaction

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霍尔效应实验分层次内容体系的构建

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物理实验 2024年第2期44卷 14-22页

作者：罗威朱梦剑周思宇程天奇彭刚国防科技大学理学院物理系湖南长沙410073 国防科技大学前沿交叉学科学院纳米系湖南长沙410073

以霍尔效应实验为例,结合科技前沿研究热点,探讨了基于石墨烯霍尔效应的四级分层次教学内容构建.霍尔效应基础内容包括石墨烯霍尔器件的灵敏度和伏安特性的测量;提升内容为石墨烯霍尔器件转移曲线的测量,载流子浓度和迁移率的计算;进阶... 详细信息

以霍尔效应实验为例,结合科技前沿研究热点,探讨了基于石墨烯霍尔效应的四级分层次教学内容构建.霍尔效应基础内容包括石墨烯霍尔器件的灵敏度和伏安特性的测量;提升内容为石墨烯霍尔器件转移曲线的测量,载流子浓度和迁移率的计算;进阶内容包括石墨烯霍尔器件的制作,石墨烯霍尔器件的自主应用;高阶内容涵盖石墨烯量子霍尔效应的测量和石墨烯霍尔效应的仿真计算.构建霍尔效应实验四级内容体系,可以更好地培养学生在基础知识、实验能力、科学素养和核心价值等方面的综合能力.

关键词：霍尔效应石墨烯 COMSOL多物理场仿真软件分层次教学

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Light-induced irreversible structural phase transition in trilayer graphene

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Light(Science & Applications) 2020年第1期9卷 335-345页

作者： Jianyu Zhang Jinsen Han Gang Peng Xi Yang Xiaoming Yuan Yongjun Li Jianing Chen Wei Xu Ken Liu Zhihong zhu Weiqi Cao Zheng Han Jiayu Dai mengjian zhu Shiqiao Qin Kostya S.Novoselov Department of Physics National University of Defense Technology410073 ChangshaChina College of Advanced Interdisciplinary Studies National University of Defense Technology410073 ChangshaChina Hunan Key Laboratory of Super Micro-structure and Ultrafast Process School of Physics and ElectronicsCentral South University410083 ChangshaChina Quantum Design China(Beijing)Co. Ltd100015 BeijingChina Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences100190 BeijingChina School of Physical Sciences University of Chinese Academy of Sciences100049 BeijingChina Songshan Lake Materials Laboratory Dongguan 523808 GuangdongChina Chongqing 2D Materials Institute Liangjiang New Area400714 ChongqingChina Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences110016 ShenyangChina School of Material Science and Engineering University of Science and Technology of China230026 AnhuiChina State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi University030006 TaiyuanChina Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

A crystal structure has a profound influence on the physical properties of the corresponding *** synthesizing crystals with particular symmetries,one can strongly tune their properties,even for the same chemical configuration(compare graphite and diamond,for instance).Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external *** abilities,though rare,lead to a number of exciting phenomena,such as phase-change memory *** the case of trilayer graphene,there are two common stacking configurations(ABA and ABC)that have distinct electronic band structures and exhibit very different *** walls exist in the trilayer graphene with both stacking orders,showing fascinating new physics such as the quantum valley Hall *** efforts have been dedicated to the phase engineering of trilayer ***,the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable ***,we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation,creating domains of different shapes in trilayer *** ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene,offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.

关键词： structural walls phase

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A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler

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Light(Science & Applications) 2022年第3期11卷 76-85页

作者： Tongyao Zhang Hanwen Wang Xiuxin Xia Ning Yan Xuanzhe Sha Jinqiang Huang Kenji Watanabe Takashi Taniguchi mengjian zhu Lei Wang Jiantou Gao Xilong Liang Chengbing Qin Liantuan Xiao Dongming Sun Jing Zhang Zheng Han Xiaoxi Li State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and Engineering University of Science and Technology of ChinaAnhui 230026China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China The Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China The University of Chinese Academy of Sciences Beijing 100029China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China

The nano-opto-electro-mechanical systems(NOEMS)are a class of hybrid solid devices that hold promises in both classical and quantum manipulations of the interplay between one or more degrees of freedom in optical,electrical and mechanical *** date,studies of NOEMS using van der Waals(vdW)heterostructures are very limited,although vdW materials are known for emerging phenomena such as spin,valley,and topological ***,we devise a universal method to easily and robustly fabricate vdW heterostructures into an architecture that hosts opto-electro-mechanical couplings in one single *** demonstrated several functionalities,including nano-mechanical resonator,vacuum channel diodes,and ultrafast thermo-radiator,using monolithically sculpted graphene NOEMS as a *** readout of electric and magnetic field tuning of mechanical resonance in a CrOCl/graphene vdW NOEMS is further *** results suggest that the introduction of the vdW heterostructure into the NOEMS family will be of particular potential for the development of novel lab-on-a-chip systems.

关键词： monolithic tuning resonator

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悬空石墨烯/六方氮化硼异质结焦耳热红外辐射器件的可控制备与光电性能研究(特邀)

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红外与激光工程 2023年第6期52卷 285-293页

作者：刘强罗芳邓小江朱梦剑朱志宏秦石乔国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室湖南长沙410073 国防科技大学南湖之光实验室湖南长沙410073 中国人民解放军31638部队云南昆明650100

石墨烯具有优异的光、电、热以及力学性质,而悬空石墨烯避免了衬底带来的褶皱、载流子散射和掺杂等影响因素,可以充分展现石墨烯的本征物理特性,因此在高性能石墨烯微电子和光电子器件研究中具有重要意义。然而,目前悬空石墨烯器件还存... 详细信息

石墨烯具有优异的光、电、热以及力学性质,而悬空石墨烯避免了衬底带来的褶皱、载流子散射和掺杂等影响因素,可以充分展现石墨烯的本征物理特性,因此在高性能石墨烯微电子和光电子器件研究中具有重要意义。然而,目前悬空石墨烯器件还存在着制备方法复杂、成品率低、性能不稳定等挑战。文中提出了一种利用六方氮化硼吸附石墨烯,将其定点转移到金属电极,制备悬空石墨烯焦耳热红外辐射器件的新方法。六方氮化硼对悬空石墨烯具有良好的支撑悬挂作用,有效提高了悬空石墨烯的力学稳定性,避免了坍塌、断裂等失效情况。真空热退火处理后悬空石墨烯的电阻降低到退火处理前的约六分之一,载流子迁移率比退火前提高了约18倍。当偏置电压为8 V时,拉曼光谱测试发现石墨烯温度为836 K,器件在955 nm波长处表现出强烈的红外辐射信号。

关键词：悬空石墨烯六方氮化硼真空退火焦耳热拉曼光谱红外辐射

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High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical oxidation

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Science China Materials 2020年第6期63卷 1076-1084页

作者： Kaixi Bi Qiang Wan Zhiwen Shu Gonglei Shao Yuanyuan Jin mengjian zhu Jun Lin Huawei Liu Huaizhi Liu Yiqin Chen Song Liu Huigao Duan College of Mechanical and Vehicle Engineering State Key Laboratory of Advanced Design and Manufacturing for Vehicle BodyHunan UniversityChangsha 410082China School of Physics and Electronics Hunan UniversityChangsha 410082China Institute of Chemical Biology and Nanomedicine(ICBN) State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China College of Science National University of Defense TechnologyChangsha 410073China

Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrated circuit and optoelectronic ***,a controlled and facile method to achieve p-n interface is *** sulfide(MoS2)has shown promising potential as an atomic-layer ntype semiconductor in electronics and ***,we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization *** lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior,with a maximum external quantum efficiency of^650%,~3.6 mA W-1 at 0 V,and a light switching ratio of^*** importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent *** to the high photoresponse at low source-drain voltage(VDS)and gate voltage(VG),the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic *** findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics,optoelectronics and CMOS logic circuits.

关键词： molybdenum disulfide lateral p-n junction photocurrent optoelectronics

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基于拉曼光谱法的电偏置悬空石墨烯器件热导率研究

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中国激光 2023年第1期50卷 212-219页

作者：崔子孺周思宇肖暘张宇辰郭楚才刘肯罗芳朱梦剑国防科技大学前沿交叉学科学院湖南长沙410073 新型纳米光电信息材料与器件湖南省重点实验室湖南长沙410073

石墨烯是典型的二维原子晶体材料,具有极高的热导率,其以独特的电子-声子相互作用机制以及在微纳尺度热管理领域的应用潜力而备受瞩目。国内外针对石墨烯在不同温度下的热导率进行了大量的理论和实验研究,但如何准确测量电偏置作用下悬... 详细信息

石墨烯是典型的二维原子晶体材料,具有极高的热导率,其以独特的电子-声子相互作用机制以及在微纳尺度热管理领域的应用潜力而备受瞩目。国内外针对石墨烯在不同温度下的热导率进行了大量的理论和实验研究,但如何准确测量电偏置作用下悬空石墨烯器件的热导率仍需进一步深入研究。本课题组成功制备了高质量的悬空石墨烯场效应晶体管,并基于拉曼光谱法研究了少层悬空石墨烯在不同电压下的热导率变化规律。实验结果显示:当偏置电压从0 V增加至1.5 V时,悬空石墨烯的最大温度变化范围为300~779 K,同时其热导率也发生了相应变化,介于2390~3000 W/(m·K)之间。本实验结果为研究悬空石墨烯纳米电子器件在实际应用场景中的热传导特性提供了实验数据参考。

关键词：光学器件悬空石墨烯场效应晶体管热导率拉曼光谱

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不同间隔时间双侧膝关节置换术的安全性与经济成本对比

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骨科 2017年第3期8卷 218-222页

作者：陈迪嘉朱先洋祝蒙见尹宗生安徽医科大学第一附属医院骨科合肥230022

目的比较不同间隔时间的双侧全膝关节置换术(total knee arthroplasty,TKA)的安全性与经济成本。方法回顾性分析我院2011年4月至2015年11月收治的双侧膝骨性关节炎病人155例,按照双侧TKA手术的间隔时间分为三组,一期完成手术者52例纳入... 详细信息

目的比较不同间隔时间的双侧全膝关节置换术(total knee arthroplasty,TKA)的安全性与经济成本。方法回顾性分析我院2011年4月至2015年11月收治的双侧膝骨性关节炎病人155例,按照双侧TKA手术的间隔时间分为三组,一期完成手术者52例纳入一期组,非同一入院周期行分期TKA的51例纳入非同期分期组,同一入院周期行TKA的52例纳入同期分期组。记录三组病人的术前一般资料、手术时间、输血率、平均输血量、住院时间、住院费用、术后并发症、术后美国特种外科医院(the hospital for special surgery,HSS)膝关节评分及疼痛视觉模拟量表(visual analogue scale,VAS)评分。结果三组病人术后各时间点的HSS评分、VAS评分比较,差异均无统计学意义(P均>0.05);一期组的手术时间最短、住院时间最短、住院费用最低,但输血率及平均输血量最多;非同期分期组的住院时间最长、住院费用最高;同期分期组的住院时间及费用均居中。三组均无感染及死亡病例,一期组发生下肢深静脉血栓1例(1.92%)、心脑血管疾病3例(5.77%)、切口愈合不良2例(3.85%),并发症总发生率为11.54%;非同期分期组和同期分期组各发生2例切口愈合不良(3.92%、3.85%)。结论对于术前一般情况相对较差且必须行双侧TKA的病人,同一入院周期内行分期手术是一种更安全、经济的手术方式。

关键词：关节成形术,置换,膝骨关节炎对比研究

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大语言模型引导的文本摘要技术与系统

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计算机应用 2024年第S1期44卷 29-33页

作者：黄君豪朱锦文向宗元李萌坚毛瑞琛之江实验室杭州311121

在实际业务中时,常面临文本与它对应的其他模态在时间响应上难以同步的问题。例如,数字人实时手语表演无法与新闻口播同步播放。为了解决长度可控问题,提出一种基于大语言模型(LLM)的文本摘要解决方案,旨在保持原文语义不变的前提下将... 详细信息

在实际业务中时,常面临文本与它对应的其他模态在时间响应上难以同步的问题。例如,数字人实时手语表演无法与新闻口播同步播放。为了解决长度可控问题,提出一种基于大语言模型(LLM)的文本摘要解决方案,旨在保持原文语义不变的前提下将文本压缩至指定长度。首先通过模板调优和人工评估的方式,确定最适合长度可控文本摘要的LLM和模板;在此基础上,利用ChatGPT得到一定量优质的满足长度需求的文本摘要训练样本;其次,结合低秩自适应微调(LoRA)技术,利用生成的数据样本集对选定的大语言模型Baichuan-13B-Chat进行微调。在推理阶段,通过微调后的LLM生成多个结果和文本筛选模块打分,最终得到语义相对完整且长度满足要求的摘要文本。实验结果表明,所提方案在亚运手语新闻数据中指标显著提升,人工评估的平均满意度达到88.53%,整体压缩达标率达到73.7%,基本满足实际生产应用的需求。

关键词：文本摘要长度可控大语言模型低秩自适应微调模板调优文本筛选

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Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

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Light(Science & Applications) 2020年第1期9卷 407-416页

作者： Jiayue Han Meiyu He Ming Yang Qi Han Fang Wang Fang Zhong mengjian Xu Qing Li He zhu Chongxin Shan Weida Hu Xiaoqing Chen Xinran Wang Jun Gou Zhiming Wu Jun Wang School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Science500 Yutian RoadShanghai 200083China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou 450001China National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance ***,for most phototransistors,the photoresponse characteristics are modulated with an electrical gate or a static *** this paper,we demonstrate a graphene/C_(60)/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light *** exploiting the power-dependent multiple states of the photocurrent,remarkable logical photocurrent switching under infrared light modulation occurs in a thick C_(60) layer(11 nm)device,which implies competition of the photogenerated carriers between graphene/C_(60) and C_(60)/***,we observe a complete positive-negative alternating process under continuous 405 nm ***,infrared light modulation of a thin C_(60)(5 nm)device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W,and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C_(60) *** addition,the tuneable bandwidth of the infrared response from 10 to 3×10^(3) Hz under visible light modulation is *** distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.

关键词： heterojunction transistors optoelectronic

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