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MOVPE Growth of In_xGa_(1-x)N(x～0.4) and Fabrication of Homo-junction Solar Cells

Journal of Materials Science & Technology 2013年第2期29卷 128-136页

作者： md. Rafiqul Islam md. rejvi kaysir md. Jahirul Islam A. Hashimoto A. Yamamoto Department of Electrical and Electronic Engineering KUETKhulna 9203 Bangladesh Graduate School of Engineering University of Fukui 3-9-1 BunkyoFukui 910-8507 Japan

The metal organic vapor phase epitaxy （MOVPE） growth of indium gallium nitride （InGaN） has been discussed in detail towards the fabrication of solar cell. The InGaN film with In contents up to 0.4 are successfully grown by controlling the fundamental growth parameters such as the precursor gas flow rates, temperature etc. The formation of metallic In originates from the higher value （0.74） of trimethylindium/ （trimethylindium ＋ triethylgallium）（TMI/（TMI ＋ TEG）） molar ratio with low （4100） V/lll weight molar ratio while the lower value （0.2） of TMI/（TMI ＋ TEG） causes the phase separation. It is also necessary to control the growth rate and epitaxial film thickness to suppress the phase separation in the material. The crystalline quality of grown films is studied and it is found to be markedly deteriorated with increasing In content. The lattice parameters as well as the thermal expansion coefficient mismatch between GaN template and InGaN epi-layer are primarily considered as the reasons to deteriorate the film quality for higher In content. By using Ino.16Ga0.84N films, an n＋-p homo-junction structure is fabricated on 0.65 μm GaN template. For such a device, the response to the light illumination （AM 1.5） is observed with an open circuit voltage of 1.4 V and the short circuit current density of 0.25 mA/cm2. To improve the performance as well as increase solar photon capturing, the device is further fabricated on thick GaN template with higher In content. The In0.25Ga0.75N n＋-p junction solar cell is found better performance with an open circuit voltage of 1.5 V and the short circuit current density of 0.5 mA/cm2. This is the InGaN p-n homo-junction solar cell with the highest In content ever reported by MOVPE.

关键词： InGaN Metal organic vapor phase epitaxy (MOVPE) Growth Film quality Doping p-n junction

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Effect of the antenna slot numbers and position on the performance of microwave ablation

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Medicine in Novel Technology and Devices 2023年第4期20卷 105-113页

作者： Sabiha Binte Aziz md rejvi kaysir md Jahirul Islam Torikul Islam Mahmudur Rahman Department of Biomedical Engineering(BME) Khulna University of Engineering&TechnologyKhulna-9230Bangladesh Photonics Research Group Department of EEEKhulna University of Engineering&TechnologyKhulna-9230Bangladesh Department of Electrical and Computer Engineering Waterloo Institute for NanotechnologyUniversity of Waterloo200 University AveWaterlooONCanada Department of Biomedical Engineering(BME) New Jersey Institute of TechnologyNewarkNJUSA Department of Electrical and Electronic Engineering Dhaka University of Engineering&TechnologyGazipur 1707Bangladesh

Microwave ablation(MWA)is a type of thermal ablation used for cancer treatment in interventional *** induce localized tissue heating MWA employs electromagnetic waves within the microwave energy spectrum,which is done by the precisely designed *** study substantially emphasizes the design and performance ameliorating of slot(both single and double)antennae and compares the results with conventional monopole antennae in terms of temperature distribution,specific absorption ratio(SAR),and thermal tissue damage *** simulation has been done in COMSOL by solving the Bioheat equation along with Maxwell electromagnetic equations using the finite element *** simulation results reveal that the double-slot antenna has the most accurate and directional heat dissipation for liver tumors as well as the highest tissue damage rate and *** highest SAR was found to be 3500 W/kg and 3350 W/kg at the implant depth of 61 mm and 63 mm for double and single-slot antennae,*** addition,the fastest tissue damage occurred near the upper slot of the double-slot *** study helps to understand the basic design parameters for enhancing single and doubleslot antennae performance.

关键词： Microwave ablation(MWA) Finite element method(FEM) Liver tumor Microwave antenna Specific absorption rate(SAR)

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