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Corrective Effect of the Angle of Incidence of the Magnetic Field Intensity on the Performance (Series and Shunt Resistances) of a Bifacial Silicon Solar Cell

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Energy and Power Engineering 2024年第9期16卷 313-323页

作者： Idrissa Sourabié Mahamadi Savadogo Boubacar Soro Ramatou Saré Christian Zoundi martial zoungrana Issa Zerbo Laboratoire de Chimie Analytique de Physique Spatiale et nergtique (L@CAPSE) Ecole Doctorale Sciences et Technologies Universit Norbert ZONGO Koudougou Burkina Faso Laboratoire dEnergies Thermiques Renouvelables (L.E.T.RE) Ecole Doctorale Sciences et Technologies Universit Joseph KI-ZERBO Ouagadougou Burkina Faso

This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.

关键词： Angle of Incidence Magnetic Field Intensity Bifacial Polycrystalline Silicon Solar Cell Series Resistance Shunt Resistance

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Investigating the Impact of Base Heating and External Electric Field on PV Cell Performance under Intense Illumination

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Open Journal of Applied Sciences 2024年第5期14卷 1305-1314页

作者： Boubacar Soro Guy Serge Tchouadep Esso-Ehanam Tchedre Kpeli Ousmane Souliga Adama Ouedraogo Issa Zerbo martial zoungrana Laboratory of Thermal and Renewable Energies Universit&#233 Joseph KI-ZERBO Ouagadougou Burkina Faso Institut des Sciences et Technologie Ecole Normale Sup&#233rieure Ouagadougou Burkina Faso

The characterization of the performances of a PV cell is linked to intrinsic factors of this cell. It is therefore important for us to identify the favorable or unfavorable conditions that affect the performance of PV cells. It is from this perspective that it seems judicious to us to study the simultaneous influence of the heating of the base and an external electric field on the performance of a PV cell under intense illumination of 50 suns. Two phenomena contribute to the heating of the base of a PV cell which is heating due to the transfer by conduction of solar radiation energy received by the surface of the PV cell and the heat generated inside the PV cell by various phenomena linked to the movement of photogenerated charged carriers. In this study, we take into account the heating linked to the movement of the charged carriers in the base. After a mathematical modeling of the PV cell considered, some hypotheses are formulated and the expressions of the electrical parameters are established as a function of the electric field and base temperature. Subsequently, we use numerical simulation to highlight the behavior of theses parameters as a function of temperature and of the intensity of the electric field. The results show that for any given temperature, the orientation of the electric field as considered in our work improves the performance of the PV cell while high temperatures degrade these performances. Furthermore, the analysis of the curves shows that the harmful effect of temperature on the performance of a PV cell is more accentuated at large values of electric field.

关键词： Collisions Thermalization Braking Electric Strength Base Temperature

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Impact of the Thicknesses of the p and p+ Regions on the Electrical Parameters of a Bifacial PV Cell

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Energy and Power Engineering 2022年第2期14卷 133-145页

作者： Ramatou Konate Bernard Zouma Adama Ouedraogo Bruno Korgo martial zoungrana Sié Kam Laboratoire d’Energies Thermiques REnouvelables (L.E.T.RE) Département de Physique Unité de Recherche et de Formation en Sciences Exactes et Appliquées Université Joseph KI-ZERBO Ouagadougou Burkina Faso Centre Universitaire Polytechnique de Kaya (CUP-Kaya) Kaya Burkina Faso

The present paper is about a contribution to the bifacial PV cell performances improvement. The PV cell efficiency is weak compared to the strong energy demand. In this study, the base thickness impacts and the p+ zone size influence are evaluated on the rear face of the polycrystalline back surface field bifacial silicon PV cell. The photocurrent density and photovoltage behaviors versus thickness of these regions are studied. From a three-dimensional grain of the polycrystalline bifacial PV cell, the magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power for simultaneous illumination on both sides. The photocurrent density, the photovoltage and electric power versus junction dynamic velocity decrease for different thicknesses of base and the p+ region increases for simultaneous illumination on both sides. It is found that the thickness of the p+ region at 0.1 μm and the base size at 100 μm allow reaching the best bifacial PV cell performances. Consequently, it is imperative to consider the reduction in the thickness of the bifacial PV cell for exhibition of better performance. This reduced the costs and increase production speed while increasing conversion efficiency.

关键词： Doped p+ Region Bifacial PV Cell Photocurrent Density Photovoltage Polycrystalline Solar Cell

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Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay

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World Journal of Condensed Matter Physics 2015年第4期5卷 284-293页

作者： Senghane Mbodji martial zoungrana Issa Zerbo Biram Dieng Gregoire Sissoko Department of Physics Alioune DIOP University of Bambey Bambey Senegal Laboratoire d’Energies Thermiques et Renouvelables (L.E.T.RE) Departement de Physique U.F.R-S.E.A Universite de Ouagadougou Ouagadougou Burkina Faso Laboratory of Semiconductors and Solar Energy Department of Physics Faculty of Science and Technology Cheikh Anta Diop University Dakar Senegal

Experimental setup of transient decay which occurs between two steady state operating points is recalled. The continuity equation is resolved using both the junction dynamic velocity (Sf) and back side recombination velocity (Sb). The transient excess minority carriers density appears as the sum of infinite terms. Influence of magnetic field on the transient excess minority carriers density and transient photo voltage is studied and it is demonstrated that the use of this technique is valid only when the magnetic field is lower than 0.001 T.

关键词： Solar Cell Recombination Parameters Magnetic Field

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3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

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Smart Grid and Renewable Energy 2017年第9期8卷 291-304页

作者： Boubacar Soro martial zoungrana Issa Zerbo Mahamadi Savadogo Dieudonné Joseph Bathiebo Laboratory of Thermal and Renewable Energies Department of Physics Unit of Training and Research in Pure and Applied Sciences University Ouaga I Prof Joseph KI-ZERBO Ouagadougou Burkina Faso

The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are:?the mobility of solar cell carriers?(electrons and holes),?their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μn,(T)?μp(T)). Then, the resolution of the continuity equation,which is a function of the carriers gradient electric field and the carriers mobility,?leads to the expressions of?the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of the temperat

关键词： Intense Light Electric Field Temperature Diffusion Coefficient Diffusion Length Density of Carriers

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Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

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Smart Grid and Renewable Energy 2017年第10期8卷 325-335页

作者： Idrissa Sourabié Issa Zerbo martial zoungrana Dioari Ulrich Combari Dieudonné Joseph Bathiebo Laboratory of Thermal and Renewable Energies Department of Physics University Ouaga I Prof. Joseph ki-Zerbo Ouagadougou Burkina Faso

The aim of this work is to investigate, with a three-dimensional steady-state approach, the effect of the incidence angle of a magnetic field on the performance of a polycrystalline silicon solar cell under multispectral illumination. The magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power, of a grain of the polycrystalline silicon solar cell. The influence of the incidence angle of the magnetic field on the diffusion coefficient, the short-circuit photocurrent density, the open-circuit photovoltage and the electric power-photovoltage is studied. Then, the curves of the electric power-photovoltage is used to find the maximum electric power allowing to calculate, according to the incidence angle of the magnetic field, the fill factor and the conversion efficiency. The study has shown that the increase of the incidence angle of the magnetic field from 0 rad to π/2 rad, can reduce the degradation of the performance of solar cells.

关键词： Bifacial Conversion Efficiency Incidence Angle Magnetic Field Polycrystalline Silicon Solar Cell

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A 3D Modelling of Solar Cell’s Electric Power under Real Operating Point

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World Journal of Condensed Matter Physics 2015年第4期5卷 275-283页

作者： Mayoro Dieye Senghane Mbodji martial zoungrana Issa Zerbo Biram Dieng Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Department of Physics Faculty of Science and Technology Cheikh Anta Diop University Dakar Senegal Department of Physics Alioune DIOP University of Bambey Bambey Senegal Laboratoire d’Energies Thermiques et Renouvelables (L.E.T.RE) Departement de Physique U.F.R-S.E.A Universitede Ouagadougou Ouagadougou Burkina Faso

This work, based on the junction recombination velocity (Sfu) concept, is used to study the solar cell’s electric power at any real operating point. Using Sfu and the back side recombination velocity (Sbu) in a 3D modelling study, the continuity equation is resolved. We determined the photocurrent density, the photovoltage and the solar cell’s electric power which is a calibrated function of the junction recombination velocity (Sfu). Plots of solar cell’s electric power with the junction recombination velocity give the maximum solar cell’s electric power, Pm. Influence of various parameters such as grain size (g), grain boundaries recombination velocity (Sgb), wavelength (λ) and for different illumination modes on the solar cell’s electric power is studied.

关键词： Electric Power Grain Size Grain Boundary Recombination Velocity Polycrystalline Solar Cell Junction Recombination Velocity

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External Magnetic Field Effect on Bifacial Silicon Solar Cell’s Electrical Parameters

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Energy and Power Engineering 2016年第3期8卷 146-151页

作者： Issa Zerbo martial zoungrana Idrissa Sourabié Adama Ouedraogo Bernard Zouma Dieudonné Joseph Bathiebo Department of Physics Laboratory of Thermal and Renewable Energies Unit of Training and Research in Pure and Applied Sciences University of Ouagadougou Joseph Ki-Zerbo Ouagadougou Burkina Faso

The aim of this work is to present a theoretical study of external magnetic field effect on a bifacial silicon solar cell’s electrical parameters (peak power, fill factor and load resistance) using the J-V and P-V characteristics. After the resolution of the magneto transport equation and continuity equation of excess minority carriers in the base of the bifacial silicon solar cell under multispectral illumination, the photo-current density and the photovoltage are determined and the J-V and P-V curves are plotted. Using simultaneously the J-V and P-V curves, we determine, according to magnetic field intensity, the peak photocurrent density, the peak photovoltage, the peak electric power, the fill factor and the load resistance at the peak power point. The numerical data show that the solar cell’s peak power decreases with magnetic field intensity while the fill factor and the load resistance increase.

关键词： Bifacial Silicon Solar Cell Fill Factor Load Resistance Magnetic Field Peak Power

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Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

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World Journal of Condensed Matter Physics 2014年第2期4卷 84-92页

作者： Amadou Diao Ndeye Thiam martial zoungrana Gokhan Sahin Mor Ndiaye Grégoire Sissoko Laboratory of Environment Materials Physics Department Training and Research Unit in Applied Science University of Ouagadougou Ouagadougou Burkina Faso Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Sénégal

In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field;the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.

关键词： Solar Cell Magnetic Field Frequency Modulation Diffusion Coefficient

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Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

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Energy and Power Engineering 2022年第10期14卷 523-540页

作者： Mahamadi Savadogo Adama Ouedraogo Boubacar Soro Zi Daouda Koudougou martial zoungrana Issa Zerbo Laboratory of Thermal and Renewable Energies Department of Physics Unit of Training and Research in Pure and Applied Sciences University Joseph Ki-Zerbo Ouagadougou Burkina Faso Centre Universitaire Polytechnique de Kaya (CUP-Kaya) Kaya Burkina Faso Institut des Sciences et Technologies Ouagadougou Burkina Faso

The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 1013 cm-3 - 1016 cm-3, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.

关键词： Moderate Light Concentration Doping Level High Injection Diffusion Parameters Conversion Efficiency

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