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Comparison of EUV Photomask Metrology Between CD-AFM and TEM

Nanomanufacturing and Metrology 2022年第2期5卷 91-100页

作者： Gaoliang Dai Kai Hahm Lipfert Sebastian markus heidelmann Physikalisch-Technische Bundesanstalt 38116BraunschweigGermany Advanced Mask Technology Center GmbH&Co.KG 01109DresdenGermany ICAN Universität Duisburg-Essen47057DuisburgGermany

Accurate metrology of extreme ultraviolet (EUV) photomask is a crucial task. In this paper, two different methods for reference EUV photomask metrology are compared. One is the critical dimension atomic force microscopy (CD-AFM). In the measurements, the contribution of its AFM tip geometry is usually the dominant error source, as measured AFM images are the dilated results of measured structures by the AFM tip geometry. To solve this problem, a bottom-up approach has been applied in calibrating the (effective) AFM tip geometry where the result is traceably calibrated to the lattice constant of silicon crystals. The other is transmission electron microscopy (TEM). For achieving measurement traceability, structure features are measured in pairs in TEM images;thus the distance between the structure pair calibrated by a metrological AFM in prior can be applied to determine the magnification of the TEM image. In this study, selected photomask structures are calibrated by the CD-AFM, and then sample prepared and measured by high-resolution TEM nearly at the same location. The results are then compared. Of six feature groups compared, the results agree well within the measurement uncertainty, indicating excellent performance of the developed methodology. This research supports the development of a photomask standard, which is applied as a “reference ruler” with improved low measurement uncertainty in photomask fabs.

关键词： Extreme ultraviolet(EUV)photomask standard Traceable calibration Metrology Critical dimension(CD) Atomic force microscopy(AFM) Transmission electron microscopy(TEM) High precision Low measurement uncertainty

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