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Schottky Diode Technology at Rutherford Appleton Laboratory

Schottky Diode Technology at Rutherford Appleton Laboratory

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2011 IEEE International Conference on Microwave Technology & Computational Electromagnetics(ICMTCE 2011)

作者： Byron Alderman manju henry Hoshiar Sanghera Simon Rea Brian Ellison Peter.de.Maagt STFC-Rutherford Appleton Laboratory OxfordshireUK European Space Agency NL 2200 AG NoodwijkThe Netherlands

Most parts of the electromagnetic spectrum are well understood and exploited,but the terahertz region between the microwave and infrared is still relatively under *** receiver applications are wide-ranging and cross-disciplinary,spanning the physical,biological,and medical *** this spectral region,Schottky diode technology is uniquely *** MMIC amplifiers are generally limited to frequencies less than ～200 GHz,above which their noise performance rapidly *** circuits,which require cooling,may not always be *** as varistor diodes （heterodyne mixing）,or varactor diodes （sub-millimetre power generation）,Schottky technology underpins terahertz receiver *** important developments have occurred in recent ***,the underpinning technology base has demonstrably *** Schottky diode technology has been shown to be practical at frequencies as high as 2,500 GHz,and frequency multipliers have been shown to be capable of generating 100s of mW at frequencies around ***,circuit designs can now be optimised theoretically with CAD electromagnetic structure simulators and non-linear analysis *** high-speed computer controlled mills,improved lithographic capabilities and micro-machining techniques also offer exciting new options for cavity and circuit *** paper describes the Schottky diode technology currently being developed at the Rutherford Appleton *** diode components are described as well as integrated diode/filter *** multiplier diode structures are reported which include novel substrate transfer techniques to reduce the effects of dielectric loading and self-heating.

关键词： About Terahertz Schottky Diode

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