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Chaos.Anti-s.nchronization between Two Novel Different Hyperchaotic s.s.em.

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Chines. Phys.cs.Letters 2008年第8期25卷 2743-2746页

作者： m. mos.a al-s.walha m. s. m. noorani s.hool of m.them.tical s.iences Universiti Kebangsaan Malaysia 43600 UKM Bangi Selangor Malaysia

We dem.ns.rate that anti-s.nchronization can coexis. in two different hyperchaotic s.s.em. of ratchets.m.ving in different as.m.etric potentials.by active control m.thod. By us.ng rigorous.m.them.tical theory, the s.fficient condition is.drawn for the s.ability of the error dynam.cs. where the controllers.are des.gned by us.ng the s.m.of the relevant variables.in hyperchaotic s.s.em.. Num.rical res.lts.are pres.nted to jus.ify the theoretical analys.s.s.rategy.

关键词： ACTIVE CONTROL LU s.s.Em

s.lutions.of Heat-Like and Wave-Like Equations.with Variable Coefficients.by m.ans.of the Hom.topy Analys.s.m.thod

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Chines. Phys.cs.Letters 2008年第2期25卷 589-592页

作者： A. K. alom.ri m. s. m. noorani R. Nazar s.hool of m.them.tical s.iences University Kebangsaan Malaysia 43600 UKM Bangi Selangor Malaysia

We em.loy the hom.topy analys.s.m.thod （HAm. to obtain approxim.te analytical s.lutions.to the heat-like and wave-like equations. The HAm.contains.the auxiliary param.ter h, which provides.a convenient way of controlling the convergence region of s.ries.s.lutions. The analys.s.is.accom.anied by s.veral linear and nonlinear heat-like and wave-like equations.with initial boundary value problem.. The res.lts.obtained prove that HAm.is.very effective and s.m.le with les. error than the Adom.an decom.os.tion m.thod and the variational iteration m.thod.

关键词： puls.rs x-ray s.ectra relativity and gravitation reds.ift

Adaptive Increas.ng-Order s.nchronization and Anti-s.nchronization of Chaotic s.s.em. with Uncertain Param.ters

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Chines. Phys.cs.Letters 2011年第11期28卷 49-51页

作者： m.mos.a al-s.walha m.s.m.noorani Faculty of s.ience Mathematics DepartmentUniversity of HailKingdom of Saudi Arabia Center for m.delling&Data Analys.s School of Mathematical SciencesUniversiti Kebangsaan Malaysia43600 UKM BangiSelangorMalaysia

We elaborate the concept of increas.ng-order s.nchronization and anti-s.nchronization of chaotic s.s.em. via an adaptive control s.hem. and m.dulation *** is.s.own that the dynam.cal evolution of a third-order chaotic s.s.em.can be s.nchronized and anti-s.nchronized with a fourth-order chaotic s.s.em.even though their param.ters.are *** analys.s.and num.rical s.m.lations.are carried out to verify the res.lts.

关键词： param.ters chaotic s.s.em

Anti-s.nchronization of Chaotic s.s.em. via Adaptive s.iding m.de Control

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Chines. Phys.cs.Letters 2012年第12期29卷 36-38页

作者： Wafaa Jawaada m.s.m.noorani m.mos.a al-s.walha s.hool of m.them.tical s.iences Universiti Kebangsaan Malaysia43600 UKM BangiSelangorMalaysia Faculty of s.ience Mathematics DepartmentUniversity of HailKingdom of Saudi Arabia

An anti-s.nchronization s.hem. is.propos.d to achieve the anti-s.nchronization behavior between chaotic s.s.em. with fully unknown param.ters.A s.iding s.rface and an adaptive s.iding m.de controller are des.gned to gain the *** s.ability of the error dynam.cs.is.proven theoretically us.ng the Lyapunov s.ability *** num.rical res.lts.are pres.nted to jus.ify the theoretical analys.s.

关键词： param.ters. theory. s.ability

Determ.nation of interface s.ates.and their tim. cons.ant for Au/s.O_2 /n-s. (mos) capacitors.us.ng adm.ttance m.as.rem.nts

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Chines. Phys.cs.B 2013年第4期22卷 429-433页

作者： H. m. Baran A. Tataroglu Departm.nt of Phys.cs Faculty of Arts and Sciences Gazi University

The frequency dependence of adm.ttance m.as.rem.nts.（capacitance–voltage （C–V ） and conductance–voltage （G/ω–V ）） of Au/s.O2 /n-s. （mos） capacitors.was.inves.igated by taking into account the effects.of the interface s.ates.（N s. ） and s.ries.res.s.ance （Rs.） at room.tem.erature. Adm.ttance m.as.rem.nts.were carried out in frequency and bias.voltage ranges.of 1 kHz–1 m.z and （ 5V）–（＋9V）, res.ectively. The values.of N s. and R s.were determ.ned by us.ng a conductance m.thod and es.im.ting from.the adm.ttance m.as.rem.nts.of the mos capacitors. At low frequencies. the interface s.ates.can follow the AC s.gnal and yield exces. capacitance and conductance. In addition, the parallel conductance （G p /ω） vers.s.log（f） curves.at various.voltages.include a peak due to the pres.nce of interface s.ates. It is.obs.rved that the N s. and their tim. cons.ant （τ） range from.1.23 ×10 12 eV-1 ·cm.2 to 1.47 ×10 12 eV-1 ·cm.2 and from.7.29 ×10-5 s.to 1.81 ×10-5s. res.ectively.

关键词： mos capacitor adm.ttance m.as.rem.nts interface s.ates

m.lybdenum.dis.lfide and m.gnes.um.oxide nanoparticle perform.nce on m.cropolar Cattaneo-Chris.ov heat flux m.del

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Applied m.them.tics.and m.chanics.Englis. Edition) 2021年第4期42卷 541-552页

作者： m.G.REDDY s.A.s.EHZAD Departm.nt of m.them.tics Acharya Nagarjuna University CampusOngole 523001Andhra PradeshIndia Departm.nt of m.them.tics COMSATS University IslamabadSahiwal 57000Pakistan

This.article intends.to illus.rate the Darcy flow and m.lting heat trans.0}s.ion in m.cropolar *** m.jor advantage of m.cropolar fluid is.the liquid particle rotation through an independent kinem.tic vector nam.d the m.crorotation *** novel as.ects.of the Cattaneo-Chris.ov(C-C)heat flux and Joule heating are incorporated in the energy trans.ort *** different nanoparticles.nam.ly,mos2 and m.O,are s.s.ended into the *** governing partial differential equations.PDEs.of the prevailing problem.are s.ackening into ordinary differential expres.ions.ODEs.via s.m.larity *** res.lting m.them.tical phenom.non is.illus.rated by the im.lication of fourth-fifth order Runge-Kutta-Fehlberg(RKF)*** fluid velocity and tem.erature dis.ributions.are deliberated by us.ng graphical phenom.na for m.ltiple values.of phys.cal *** res.lts.are dis.layed for both m.lybdenum.dis.lphide and m.gnes.um.oxide nanoparticles.A com.arative benchm.rk in the lim.ting approach is.reported for the validation of the pres.nt *** is.revealed that the increm.nting m.terial cons.raint res.lts.in a higher fluid velocity for both m.lybdenum.dis.lphide and m.gnes.um.oxide nanoparticle s.tuations.

关键词： m.cropolar fluid Cattaneo-Chris.ov(C-C)heat flux m.lybdenum.dis.lphide nanoparticle m.lting effect num.rical s.lution

Im.roving tribological behavior of friction s.ir proces.ed A413/s.C_p s.rface com.os.te us.ng mos_2 lubricant particles

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Trans.ctions.of Nonferrous.m.tals.s.ciety of China 2017年第2期27卷 298-304页

作者： m.JANBOZORGI m.s.Am.NIAN m.s.DEGHIAN P.s.PEHRINIA Departm.nt of m.terials.s.ience and Engineering Sharif University of Technology Departm.nt of m.terials.s.ience and Engineering Isfahan University of Technology

The effect of mos2 lubricant particles.on the m.cros.ructure, m.crohardnes. and tribological behavior of A413/s.Cp s.rface com.os.te, fabricated via friction s.ir proces.ing （Fs.）, was.s.udied. For this.purpos., the Fs. was.carried out with tool rotational s.eed of 1600 r/m.n, tool travel s.eed of 25 m./m.n and tool tilt angle of 3° through only a “s.ngle pas.”. The optical and s.anning electron m.cros.opies. m.crohardnes. and reciprocating wear tes.s.were us.d to characterize the s.m.les. The res.lts.s.owed that the addition of mos2 lubricant particles.to A413/s.Cp s.rface com.os.te leads.to the decreas. of friction coefficient and m.s. los.. In fact, the generation of m.chanically m.xed layer （m.L） containing mos2 lubricant particles.in A413/s.Cp/mos2p s.rface hybrid com.os.te res.lts.in the reduction of m.tal-to-m.tal contact and s.bs.quently leads.to the im.rovem.nt of tribological behavior.

关键词： friction s.ir proces.ing s.rface hybrid com.os.te m.cros.ructure m.crohardnes. tribological behavior

m.as.rem.nt Proces. of mosFET Device Param.ters.with VEE Pro s.ftware for DP4T RF s.itch

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International Journal of Com.unications. Network and s.s.em.s.iences 2011年第9期4卷 590-600页

作者： Viranjay m. s.ivas.ava K. s. Yadav G. s.ngh 不详

To des.gn a Double-Pole Four-Throw (DP4T) RF s.itch, m.as.rem.nt of device param.ters.is.required. In this.DP4T RF s.itch Cmos is.a unit cell, s. with a thin oxide layer of thicknes. 628 ? which is.m.as.red optically. s.m. of the m.terial param.ters.were found by the curve drawn between Capacitance vers.s.Voltage (C-V) and Capacitance vers.s.Frequency (C-F) with the application of Vis.al Engineering Environm.nt Program.ing (VEE Pro). To perform.the m.as.rem.nt proces.ing at a dis.ance, from.the hazardous.room. we us. VEE Pro s.ftware. In this.res.arch, to acquire a fine res.lt for RF mosFET, we vary the voltage with m.nor increm.nts.and perform.the m.as.rem.nts.by vary the applying voltage from.+5 V to –5 V and then back to +5 V again and then s.ve this.res.lt in a data s.eet with res.ect to tem.erature, voltage and frequency us.ng this.program. We have inves.igated the characteris.ics.of RF mosFET, which will be us.d for the wireles. telecom.unication s.s.em..

关键词： Capacitance-Frequency Curve Capacitance-Voltage Curve DP4T s.itch LCR m.ter mos Device Radio Frequency RF s.itch Tes.ing VEE Pro VLs.

Des.gning Param.ters.for RF Cmos Cells

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Circuits.and s.s.em. 2010年第2期1卷 49-53页

作者： Viranjay m. s.ivas.ava K. s. Yadav G. s.ngh 不详

In this.paper, we have inves.igated the des.gn param.ters.of RF Cmos cells.which will be us.d for s.itch in the wireles. telecom.unication s.s.em.. This.RF s.itch is.capable to s.lect the data s.ream. from.the two antennas.for both the trans.0}tting and receiving proces.es. The res.lts.for the developm.nt of a cell-library which includes.the bas.cs.of the circuit elem.nts.required for the radio frequency s.b-s.s.em. of the integrated circuits.s.ch as.V-I characteris.ics.at low-voltages. contact res.s.ance which is.pres.nt in the s.itches.and the potential barrier with contacts.available in devices.has.been dis.us.ed.

关键词： Cmos Cell Library Contact Res.s.ance DG mosFET DP4T s.itch Potential Barrier Radio Frequency RF s.itch Res.s.ance of mos Voltage-Current Curve VLs.