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Impact of chlorites on the wettability of tight oil sandstone reservoirs in the Upper Triassic Yanchang Formation,Ordos Basin,China

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Science China Earth Sciences 2021年第6期64卷 951-961页

作者： Zhongnan WANG xiaorong luo Keyu LIU Yuchen FAN Xiangzeng WANG Key Laboratory of Deep Oil and Gas China University of Petroleum(East China)Qingdao266580China School of Geosciences China University of Petroleum(East China)Qingdao266580China Key Laboratory of Petroleum Resources Research Institute of Geology and GeophysicsChinese Academy of SciencesBeijing100029China Laboratory for Marine Mineral Resources Qingdao National Laboratory for Marine Science and TechnologyQingdao266071China Shanxi Yanchang Petroleum(Group)Co. Ltd.Xi’an710075China

Wettability is an essential property of reservoirs that is of great importance for enhancing oil recovery(EOR)and oil *** wettability of reservoirs is generally believed to be strongly affected by mineral compositions but it is not always the *** integrated study of petrography and wettability was carried out to determine the impact of chlorite minerals on the wettability of the sandstone reservoirs in the Upper Triassic Yanchang *** are found to be commonly present in the reservoir sandstones as detrital grains,rim-shaped cements,and biotite-chloritized forms with the pore peripheries being largely coated by chlorite,which is the main mineral in direct contact with *** pore scale,the wetting state of chlorites can either be oil-wet or water-wet in the tight sandstone reservoirs depending on wettability alteration by oil *** in contact with pores occupy a large of proportions of oil-wet pore walls and are crucial for the formation of oil-wetting state of reservoir *** core scale,the contents of chlorites in direct contact with pores do not correlate well with the AmottHarvey index due to other factors such as heterogeneity,oil-bearing degrees of samples.

关键词： Wettability Chlorite Pore scale Core scale Yanchang Formation Ordos Basin

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Overpressure distribution and pressuring mechanism on the southern margin of the Junggar Basin, Northwestern China

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Chinese Science Bulletin 2006年第19期51卷 2383-2390页

作者： luo xiaorong LIU Loujun LI Xueyi Department of Geology Northwestern University Xi'an 710069 China Key Laboratory of Resources Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029 China Institute of Petroleum Exploration and Development Xinjiang Oil Field Corporation Urumqi 830011 China

On the basis of the pressure data ob- tained from the southern margin of the Junggar Basin, Northwestern China, the distribution and evolution of overpressures in high permeable sandy and in low-permeability shale formations are characterized. The evolution of overpressures in various structural processes, especially in erosion and mechanical de- formation, is quantified by numerical modeling stud- ies. The modeling results show that anomalies of high pressure observed in boreholes are likely a combination of several effects, i.e. 1) the compaction caused by overloading, 2) the compaction caused by lateral tectonic stressing, 3) lateral transmission of hydraulic pressure associated with fold formation, and 4) vertical hydraulic connection caused by opening faults crossing formations with different initial excessive pressures. The main mechanisms of overpressures and their distributions are defined.

关键词：西北地区 Junggar盆地大地构造应力数值模型超压机制

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High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

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Science China(Information Sciences) 2018年第6期61卷 182-191页

作者： Chao YANG xiaorong luo Siyu DENG Fu PENG Bo ZHANG State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

In this paper, we present a novel high-voltage low on-resistance trench-gate（TG） hole-gas enhancement-mode（E-mode） high-electron mobility transistor（HEMT） with multi-conduction channels（MCs） and investigate its mechanism using simulations. This device features a repetitive Al N/Ga N heterojunction unit and a Ga N/Al0.26Ga0.74N hetero-junction. Its source and drain are located on the same side of the metal-insulator-semiconductor（MIS） TG, and the source is located beside the gate. During operation,first, 2-D electron gas（2 DEG） forms MCs at multiple Al N/Ga N hetero-interfaces. These MCs result in ultra-low specific on-resistance(Ron,sp) and improved transconductance（gm）. Second, 2-D hole gas（2 DHG）is induced at the Ga N/Al0.26Ga0.74N hetero-interface to prevent electrons from being injected from the source to the MCs. As such, E-mode operation is realized, which exceeds the performance of the conventional E-mode method by depleting the 2 DEG under the gate. Third, in the off-state, 2 DHG and 2 DEG are depleted into negative and positive charges, respectively, thereby forming the polarization junction. This depletion region is extended due to the electric field（E-field） modulation effect by the polarization junction,thereby achieving an enhanced breakdown voltage（BV）. Fourth, the drain-induced barrier lowering（DIBL）effect is significantly suppressed, which ensures a high BV and low leakage current. Additionally, due to the unique source location, the TG-MC-HEMT is smaller than the conventional MIS Al Ga N/Ga N HEMT（Con-HEMT）. The BV of the TG-MC-HEMT is 604 V and the Ron,sp value can be as small as 0.38 m?·cm2.

关键词： multi-conduction channels 2-D hole gas polarization-junction high-voltage low specific onresistance drain-induced barrier lowering effect

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Novel high voltage RESURF Al GaN/GaN HEMT with charged buffer layer

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Science China(Information Sciences) 2016年第4期59卷 142-151页

作者： Jiayun XIONG Chao YANG Jie WEI Junfeng WU Bo ZHANG xiaorong luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A novel reduced surface field （RESURF） Al GaN /GaN high electron mobility transistor（HEMT）with charged buffer layer is proposed. Its breakdown mechanism and on-state characteristics are *** HEMT features buried Fluorine ions in the GaN buffer layer both under the Drift and the Gate region （FDG）. The section of FDG under the drift region （FD） not only reduces the electric field （E-field） peak at the gate edge but also enhances the E-field in the drift region by the assisted depletion, leading to a significant improvement in breakdown voltage （BV）. Moreover, the section of FDG under the gate （FG） enhances the back barrier and effectively prevents electron injecting from the source to form leakage current, thus a higher BV is achieved. The BV of the proposed HEMT sharply increases to 750 V from 230 V of conventional AlGaN /GaN HEMT with the same dimensional parameters, and the specific on-resistance （Ron,sp） just increases to1.21 m?·cm2from 1.01 m?·cm2.

关键词： high voltage power device AlGaN/GaN HEMT charged buffer RESURF

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Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

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Science China(Information Sciences) 2019年第6期62卷 87-97页

作者： Fu PENG Chao YANG Siyu DENG Dongya OUYANG Bo ZHANG Jie WEI xiaorong luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A novel three-dimensional hole gas(3 DHG) enhancement-mode(E-mode) heterostructure fielde?ect transistor(HFET) is proposed and investigated. It features back-to-back graded AlGaN(BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas(3 DEG) and 3 DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor(MIS) trench gate, and the source is in contact with the HfO2 gate ***, the on-state current is significantly improved owing to the high-density 3 DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3 DEG is blocked by the 3 DHG, thereby realizing the E-mode. The threshold voltage(Vth) can be modulated by a partial doping conductive ***, a high breakdown voltage(BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the o?-state. Next, the BGA-HFET is smaller than the conventional HFET(Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.

关键词： graded AlGaN 3DHG-3DEG large on-state current high voltage enhancement mode

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From deep basin gas to diagenetic trap—An example from the Yulin Gas Field in the Ordos Basin

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Chinese Science Bulletin 2007年第21期52卷 2973-2983页

作者： ZHANG LiuPing luo xiaorong MA XinHua CHEN MengJin WU MingHui Key Laboratory of Petroleum Resource Chinese Academy of Sciences Beijing 100029 China Research Institute of Petroleum Exploration and Development PetroChina Beijing 100083 China

In the updip portion of the Yulin Gas Field in the Ordos Basin, there are no any structural, stratigraphic and sedimentary lithologic seals. Using thin-section petrography, ultraviolet fluorescence microscopy, micro-thermometry and Raman microspectrometry, this paper finds out the diagenetic trap and studies the diagenetic history of this field. It was revealed that three phases of diagenesis and hydrocarbon charging happened in late Triassic, late Jurassic and the end of early Cretaceous respectively. In the first two phases, acid geofluid entered the reservoir and caused dissolution and cementation. Although the porosities had been increased, further compaction accompanying re-subsidence resulted in tight sandstone and conglomerates. Till the end of the early Cretaceous, bulk of gas migrated into the tight reservoir. Cementation, however, kept on in the updip portion of this field due to low gas saturation and formed the diagenetic trap. The mechanism for gas accumulation was changed from deep basin gas to diagenetic trap, which offers a sealing condition that can retain gas for much longer time.

关键词：天然气气田储气量天然气开发

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Numerical modeling of secondary migration and its applications to Chang-6 Member of Yanchang Formation (Upper Triassic), Longdong area, Ordos Basin, China

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Science China Earth Sciences 2007年第Z2期50卷 91-102页

作者： luo xiaorong YU Jian ZHANG LiuPing YANG Yang CHEN RuiYin CHEN ZhanKun ZHOU Bo Key Laboratory of Petroleum Resources Researches Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029 China Institute of Petroleum Exploration and Development Changqing Oil Company PetroChina Company Limited Xi'an 710021 China Key Laboratory of Petroleum Resources Researches Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029 China Institute of Petroleum Exploration and Development Changqing Oil Company PetroChina Company Limited Xi'an 710021 China Key Laboratory of Petroleum Resources Researches Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029 China Key Laboratory of Petroleum Resources Researches Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029 China Key Laboratory of Petroleum Resources Researches Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029 China

Mathematic modeling, established on the basis of physical experiments, is becoming an increasingly important tool in oil and gas migration studies. This technique is based on the observation that hydrocarbon migration tends to take relative narrow pathways. A mathematical model of hydrocarbon migration and accumulation is constructed using the percolation theory. It is then calibrated using physical experimental results, and is tested under a variety of conditions, to understand the applicability of the model in different migration cases. Through modeling, dynamic conditions of large-scale migration pathways within homogeneous formations can be evaluated. Basin-scale hydrocarbon migration pathways and their characteristics are analyzed during the model application to the Chang-8 Member of the Triassic Yanchang Formation in Longdong area of Ordos Basin. In heterogeneous formations, spatial changes in fluid potential determine the direction of secondary migration, and heterogeneity controls the characteristics and geometry of secondary migration pathways.

关键词： hydrocarbon migration, percolation theory, numerical model, migration pathway, migration carrier, heterogeneity

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Classification of Complex Reservoirs in Superimposed Basins of Western China

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Acta Geologica Sinica(English Edition) 2010年第5期84卷 1011-1034页

作者： PANG Xiongqi ZHOU Xinyuan LIN Changsong HUO Zhipeng luo xiaorong PANG Hong State Key Laboratory of Petroleum Resource and Prospecting China University of Petroleum （Beijing） Beijing 102249 Basin and Reservoir Research Center China University of Petroleum （Beijing） Beijing 102249 PetroChina Tarim Oilfield Company Korla Xinjiang 841000 China University ofGeosciences （Beijing） Beijing 100083 Key Laboratory of Petroleum Resources Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029

Many of the sedimentary basins in western China were formed through the superposition and compounding of at least two previously developed sedimentary basins and in general they can be termed as complex superimposed basins. The distinct differences between these basins and monotype basins are their discontinuous stratigraphic sedimentation, stratigraphic structure and stratigraphic stress-strain action over geological history. Based on the correlation of chronological age on structural sections, superimposed basins can be divided into five types in this study：（1） continuous sedimentation type superimposed basins, （2） middle and late stratigraphic superimposed basins, （3） early and late stratigraphic superimposed basins, （4） early and middle stratigraphic superimposed basins, and （5） long-term exposed superimposed basins. Multiple source-reservoir-caprock assemblages have developed in such basins. In addition, multi-stage hydrocarbon generation and expulsion, multiple sources, polycyclic hydrocarbon accumulation and multiple-type hydrocarbon reservoirs adjustment, reformation and destruction have occurred in these basins. The complex reservoirs that have been discovered widely in the superimposed basins to date have remarkably different geologic features from primary reservoirs, and the root causes of this are folding, denudation and the fracture effect caused by multiphase tectonic events in the superimposed basins as well as associated seepage, diffusion, spilling, oxidation, degradation and cracking. Based on their genesis characteristics, complex reservoirs are divided into five categories：（1） primary reservoirs, （2） trap adjustment type reservoirs, （3） component variant reservoirs, （4） phase conversion type reservoirs and （5） scale-reformed reservoirs.

关键词： complex reservoirs tectonic event physically destructive effect chemically destructiveeffect western China's superimposed basins

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Late-Stage Reservoir Formation Effect and Its Dynamic Mechanisms in Complex Superimposed Basins

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Acta Geologica Sinica(English Edition) 2010年第5期84卷 1055-1077页

作者： KANG Dejiang PANG Xiongqi KUANG Jun luo xiaorong PANG Hong LEI Lei State Key Laboratory of Petroleum Resource and Prospecting China University of Petroleum Beijing 102249 Research Institute of Petroleum Exploration and Development ofDaqing Oilfield Co. Ltd. Daqing Heilongjiang 163712 Basin and Reservoir Research Center China University of Petroleum Beijing 102249 PetroChina Xinjiang Oilfield Company Qaramay Xinjiang 834000 Key Laboratory. of Petroleum Resources Institute of Geology and Geophysics Chinese Academy of Sciences Beijing 100029

Complex superimposed basins exhibit multi-stage tectonic events and multi-stage reservoir formation; hydrocarbon reservoirs formed in the early stage have generally late-stage genesis characteristics after undergoing adjustment, reconstruction and destruction of later-stage multiple tectonic events. In this paper, this phenomenon is called the late-stage reservoir formation effect. The late-stage reservoir formation effect is a basic feature of oil and gas-forming reservoirs in complex superimposed basins, revealing not only multi-stage character, relevance and complexity of oil and gas- forming reservoirs in superimposed basins but also the importance of late-stage reservoir formation. Late-stage reservoir formation is not a basic feature of oil and gas forming reservoir in superimposed basins. Multi-stage reservoir formation only characterizes one aspect of oil and gas-forming reservoir in superimposed basins and does not represent fully the complexity of oil and gas-forming reservoir in superimposed basins. We suggest using ＂late-stage reservoir formation effect＂ to replace the ＂late-stage reservoir formation＂ concept to guide the exploration of complex reservoirs in superimposed basins. Under current geologic conditions, the late-stage reservoir formation effect is represented mainly by four basic forms： phase transformation, scale reconstruction, component variation and trap adjustment. The late-stage reservoir formation effect is produced by two kinds of geologic processes： first, the oil and gas retention function of various geologic thresholds （hydrocarbon expulsion threshold, hydrocarbon migration threshold, and hydrocarbon accumulating threshold） causes the actual time of oil and gas reservoir formation to be later than the time of generation of large amounts of hydrocarbon in a conventional sense, producing the late-stage reservoir formation effect; second, multiple types of tectonic events （continuously strong reconstruction, early-stage strong reconstru

关键词： superimposed basin late-stage reservoir formation effect late-stage reservoir formation,tectonic event geologic threshold

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Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate

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Science China(Information Sciences) 2022年第6期65卷 281-282页

作者： xiaorong luo Junyue HUANG Xu SONG Qinfeng JIANG Jie WEI Jian FANG Fei YANG School of Electronic Science and Engineering University of Electronic Science and Technology of China Global Energy Interconnection Research Institute

Dear editor,SiC MOSFET has the advantages of low specific onresistance(Ron,sp), high breakdown voltage(BV), high operating temperature, and low thermal resistance. As a switching device, SiC MOSFET needs an anti-paralleled freewheeling diode(FWD) in many cases. Owing to the wide band gap, the body diode in SiC MOSFET has a drawback of high turn-on voltage(VF) in the reverse conduction [1].

关键词： SiC MOSFET Schottky barrier diode semi-superjunction split trench gate reverse turn-on voltage

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