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Electrical Characteristics of Metal Contacts to Boron Doped Polycrystalline Semiconducting Diamond Thin Films

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Chinese Physics Letters 1996年第7期13卷 541-544页

作者： liu xing-zhao YANG Bang-chao JIA Yu-min LI Yan-rong University of Electronic Science and Technology of China Chengdu 610054

Low resistance ohmic contacts have been fabricated on chemical vapor deposition grown polycrystalline B doped semiconducting diamond thin films by thermally activated solid state reaction process.A bilayer metallization of Ti/Au was *** annealing at 820℃ for 10min in Ar atmosphere,the specific contact resistance of 2 × 10^(-4)Ω.cm2 has been *** properties of the diamond/Ti interfaces have been characterized by using x-rays diffraction and scanning electron *** performance of semiconducting diamond thin film thermistors has been reported.

关键词： resistance process Diamond

Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates

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Chinese Physics Letters 2013年第9期30卷 145-148页

作者： CHU Fu-Tong CHEN Chao ZHOU Wei liu xing-zhao State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054

The breakdown voltage of AlGaN/GaN high electron mobility transistors(HEMTs)is enhanced by employing metal chromium(Cr)nanoparticle-embedded polyimide(PI)as a high-permittivity(high-𝐿)dielectric covering both the source-gate and gate-drain *** PI/Cr composite high-𝐿dielectrics acting as a field plate prevent the occurrence of strong electric fields produced at the drain side edge of the gate electrode to obtain an optimum lateral electric flux of *** breakdown voltage is improved by approximately 35%when using the PI/Cr thin film dielectric field plate while maintaining high performance,a high transconductance value of 122.4mS/mm,and a large saturated drain-current value of 748mA/mm.

关键词： AlGaN/GaN drain HEMTs

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate Dielectrics

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Chinese Physics Letters 2013年第2期30卷 169-173页

作者： TIAN Ben-Lang CHEN Chao ZHANG Ji-Hua ZHANG Wan-Li liu xing-zhao The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electron Science and Technology of ChinaChengdu 610054

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors(MISHEMTs)with sodium beta-alumina(SBA)thin films as the gate dielectrics are ***/GaN metal-semiconductor high-electron-mobility transistors(MESHEMTs)and MISHEMTs with Al_(2)O_(3) thin-film gate dielectrics are also fabricated for comparative *** MISHEMTs with SBA gate dielectrics show nearly four orders of magnitude lower gate leakage current and an approximately 60%increase in maximum transconductance,indicating that SBA can serve as an effective dielectric for AlGaN/GaN ***,SBA gate dielectrics result in threshold voltage modulation of AlGaN/GaN *** with those of AlGaN/GaN MESHEMTs,the threshold voltages of AlGaN/GaN MISHEMTs with Al_(2)O_(3) gate dielectrics shift negatively from-5.5 V to-7.5 *** contrast with the normally used gate dielectrics,the threshold voltages of MISHEMTs with SBA gate dielectrics shift positively from-5.5 V to-3.5 *** on an x-ray photoelectron spectrum study and energy band spectrum calculation,the primary mechanism of the threshold voltage modulation is attributed to the decrease in the surface valence-band maximum and the increase in the barrier height by SBA gate dielectrics.

关键词： AlGaN/GaN MISHEMT HEMTs

Synthesis of N-Alkylperfluorooctanesulfonamides and Its Derivatives

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有机化学 2003年第Z1期23卷 118-119页

作者： LI Yan CHEN Zhi-Qi ZHOU Ye-Bing CHEN Zu-xing liu zhao-Jie Faculty of Chemisty and Material Science Hubei University Wuhan 430062 Institute of Organic Synthesis Central China Normal University Wuhan 430079 Faculty of Chemisty and Material Science Hubei University Wuhan 430062 Faculty of Chemisty and Material Science Hubei University Wuhan 430062 Faculty of Chemisty and Material Science Hubei University Wuhan 430062 Institute of Organic Synthesis Central China Normal University Wuhan 430079

　　N-Alkylperfluorooctanesulfonamide compounds are special fine chemicals, and have been applied in many fields, such as vulcanizing agents for fluoro rubbers, smooth and friction reducing for coatings, fire extinguisher, anticorrosive agents for metals, water- and oil-repellents for leather, textiles and paper, photographic emulsion.[1]……

关键词： vulcanizing agents

Thin film thermocouples for surface temperature measurement of turbine blade

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Thin film thermocouples for surface temperature measurement ...

短序列、低信噪比条件下积分三谱计算的改进算法

第八届中国功能材料及其应用学术会议

作者： CHEN Yin-zhi JIANG Hong-chuan JIANG Shu-wen liu xing-zhao ZHANG Wan-li State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

ISBN: (纸本)9783037859698

There are three types thin film thermocouples(TFTCs) fabricated on the nickel-based superalloy substrates,including type-K(Ni-10%Cr/Ni-3%Si),type-S(Pt-10%Rh/Pt) and indium tin oxide(ITO)versus platinum(Pt) *** of the samples were calibrated and cycled in tube *** Seebeck coefficient of type-K,type-S and ITO/Pt TFTCs is36.53 μV/℃,8.89 μV/℃.and 81.67 μV/℃,*** life time of type-K and type-S TFTCs is 3calibrating cycles(about 25 h) and 2 calibrating cycles(about 20 h),*** ITO/Pt TFTCs shows longer life time that is longer than 5 cycles(about 50 h).

关键词： Thin film thermocouple NiCr/NiSi PtRh/ Pt ITO/Pt Nickel-based superalloy

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上海交通大学学报 2001年第1期35卷 40-43页

作者：韩军刘兴钊上海交通大学电子工程系上海200030

提出了一种适用于短序列、低信噪比条件下计算积分三谱 (Integrated Trispectrum)的改进算法 ,在积分三谱计算中将自回归 (AR)谱估计代替离散傅里叶变换 (DFT) ,得到了一个基于 AR谱估计的积分三谱算法 .通过计算机仿真与传统的积分三... 详细信息

提出了一种适用于短序列、低信噪比条件下计算积分三谱 (Integrated Trispectrum)的改进算法 ,在积分三谱计算中将自回归 (AR)谱估计代替离散傅里叶变换 (DFT) ,得到了一个基于 AR谱估计的积分三谱算法 .通过计算机仿真与传统的积分三谱算法进行比较 ,发现在加性色高斯噪声、短序列和低信噪比的情况下。

关键词：积分三谱自回归谱估计高阶统计量短序列信噪比改进算法信号估计估计方差

短序列条件下基于分段多项式建模方法的相位估计性能分析

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电子与信息学报 2005年第4期27卷 523-526页

作者：卢琨刘兴钊上海交通大学电子工程系上海200030

该文主要对短序列非多项式相位条件下基于高阶模糊函数(HAF)的多项式相位系数估计算法性能进行了较详细的讨论。进一步研究了基于这种算法思想的分段多项式相位建模的瞬时相位估计方法。该方法的思想主要体现为将需估计数据序列进行分... 详细信息

该文主要对短序列非多项式相位条件下基于高阶模糊函数(HAF)的多项式相位系数估计算法性能进行了较详细的讨论。进一步研究了基于这种算法思想的分段多项式相位建模的瞬时相位估计方法。该方法的思想主要体现为将需估计数据序列进行分段,每个短数据段的瞬时相位采用一个低阶的多项式来逼近,而这些逼近多项式的各阶系数利用HAF或乘积高阶模糊函数(PHAF)的方法进行估计,最终整个数据序列的相位由各段估计出的瞬时相位合并而成。该方法的估计性能很大程度上取决于各分段数据序列的估计精度。文中分析了短序列非多项式相位对HAF 及PHAF的影响,并通过仿真实验给出了具有一般性的结论。

关键词：瞬时相位估计多项式相位信号分段建模短序列乘积高阶模糊函数

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PZT压电纤维的制备及性能研究

压电与声光 2009年第4期31卷 568-570页

作者：杨杰刘兴钊电子科技大学电子薄膜与集成器件国家重点实验室四川成都610054

以溶胶-凝胶(Sol-Gel)工艺制备的PZT陶瓷粉为原料,采用氧化物粉末装管法制备PZT压电陶瓷纤维。SEM分析显示,该陶瓷纤维呈圆柱型形貌,直径约为250μm。分析了不同烧结温度下PZT陶瓷纤维的断面微结构及Pb含量变化,得出PZT陶瓷纤维的最佳... 详细信息

以溶胶-凝胶(Sol-Gel)工艺制备的PZT陶瓷粉为原料,采用氧化物粉末装管法制备PZT压电陶瓷纤维。SEM分析显示,该陶瓷纤维呈圆柱型形貌,直径约为250μm。分析了不同烧结温度下PZT陶瓷纤维的断面微结构及Pb含量变化,得出PZT陶瓷纤维的最佳烧结温度为1 000℃。XRD分析表明,此温度下烧结的陶瓷纤维呈单一的钙钛矿结构。实验结果表明,采用氧化物粉末装管法制备的陶瓷纤维大小均匀,结构致密,具有高长径比,克服了传统工艺不能制备结构致密的长纤维的缺陷。

关键词： PZT 溶胶-凝胶法纤维氧化物粉末装管法

多扫频接收方案改善电离层相位失真估计的算法

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数据采集与处理 2005年第2期20卷 236-239页

作者：朱瑜红卢琨刘兴钊上海交通大学电子工程系上海200030

提出了一种新的多扫频接收方案,以改进对电离层相位路径失真的估计精度。该方案无需对发射端进行改动,只在接收端采用多扫频信号进行混频,即可分离出含有相同的电离层相位路径失真信息的多通道数据。利用多通道数据可获得比单通道数据... 详细信息

提出了一种新的多扫频接收方案,以改进对电离层相位路径失真的估计精度。该方案无需对发射端进行改动,只在接收端采用多扫频信号进行混频,即可分离出含有相同的电离层相位路径失真信息的多通道数据。利用多通道数据可获得比单通道数据更好的相位失真估计。通过理论推导和仿真实验,验证了提出方案的有效性。

关键词：超视距雷达高频天波相位路径失真多扫频接收