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optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Photonics Research 2020年第4期8卷 457-467页

作者： MARCo PASSoNI DARIo GERACE liam o’faolain LUCIo CLAUDIo ANDREANI Department of Physics University of Pavia27100 PaviaItaly Centre for Advanced Photonics and Process Analysis Cork Institute of TechnologyCorkIreland Tyndall National Institute CorkIreland Institute for Photonics and Nanotechnologies(IFN)-CNR 20133 MilanoItaly

Reducing power dissipation in electro-optic modulators is a key step for widespread application of silicon photonics to optical *** this work,we design Mach–Zehnder modulators in the silicon-on-insulator platform,which make use of slow light in a waveguide grating and of a reverse-biased p-n junction with interleaved contacts along the waveguide *** optimizing the junction parameters,we discuss the full simulation of the modulator in order to find a proper trade-off among various figures of merit,such as modulation efficiency,insertion loss,cutoff frequency,optical modulation amplitude,and dissipated energy per *** with conventional structures(with lateral p-n junction and/or in rib waveguides without slow light)highlights the importance of combining slow light with the interleaved p-n junction,thanks to the increased overlap between the travelling optical wave and the depletion *** a surprising result,the modulator performance is improved over an optical bandwidth that is much wider than the slow-light bandwidth.

关键词： optimizing an interleaved p-n reduce energy silicon slow-light modulators

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Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

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Light(Science & Applications) 2023年第7期12卷 1381-1390页

作者： Andres Remis Laura Monge-Bartolome Michele Paparella Audrey Gilberto Guilhem Boissier Marco Grande Alan Blake liam o'faolain Laurent Cerutti Jean-Baptiste Rodriguez Eric Tournie ES University of MontpellierCNRSF-34000 MontpellierFrance Department of Electrical and Information Engineering Polytechnic University of Bari4 Via E OrabonaIT-70126 BariItaly Tyndall National Institute Lee Maltings ComplexDyke ParadeIR-T12R5CP CorkIreland Centre for Advanced Photonics and Process Analysis Munster Technological UniversityBishopstownIR-T12P928 CorkIreland

Silicon(Si)photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology,the large silicon wafer size,and promising Si optical *** monolithic integration by direct epitaxy of III-V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics *** considerable progress in the last decade,only discrete III-V lasers grown on bare Si wafers have been reported,whatever the wavelength and laser *** we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide.A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by Sio_(2).Growth and device fabrication challenges,arising from the template architecture,were overcome to demonstrate more than 10 mw outpower of emitted light in continuous wave operation at room *** addition,around 10%of the light was coupled into the SiN waveguides,in good agreement with theoretical calculations for this butt-coupling *** work lft an important building block and it paves the way for future low-cost,large-scale,fully integrated photonic chips.

关键词： diode passive coupling

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Wavelength stability in a hybrid photonic crystal laser through controlled nonlinear absorptive heating in the reflector

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Light(Science & Applications) 2018年第1期7卷 654-660页

作者： Andrei P.Bakoz Alexandros A.Liles Alfredo A.Gonzalez-Fernandez Tatiana Habruseva Changyu Hu Evgeny A.Viktorov Stephen P.Hegarty liam o’faolain Centre for Advanced Photonics and Process Analysis&Department of Physical Sciences Cork Institute of TechnologyCork T12P928Ireland Tyndall National Institute University College CorkLee MaltingsDyke ParadeCork T12R5CPIreland School of Physics&Astronomy University of St AndrewsNorth HaughSt Andrews KY169SSUK National Research University of Information Technologies Mechanics and OpticsSaint Petersburg 199034Russia IMEC Department of Information Technology(INTEC)Photonics Research GroupGhent UniversityTechnologiepark-Zwijnaarde 159052 GhentBelgium National Institute of Astrophysics Optics and Electronics72840 TonantzintlaMexico

The need for miniaturized,fully integrated semiconductor lasers has stimulated significant research efforts into realizing unconventional configurations that can meet the performance requirements of a large spectrum of applications,ranging from communication systems to *** demonstrate a hybrid,silicon photonicscompatible photonic crystal(PhC)laser architecture that can be used to implement cost-effective,high-capacity light sources,with high side-mode suppression ratio and milliwatt output output *** emitted wavelength is set and controlled by a silicon PhC cavity-based reflective filter with the gain provided by a Ⅲ–Ⅴ-based reflective semiconductor optical amplifier(RSoA).The high power density in the laser cavity results in a significant enhancement of the nonlinear absorption in silicon in the high Q-factor PhC *** heat generated in this manner creates a tuning effect in the wavelength-selective element,which can be used to offset external temperature fluctuations without the use of active *** approach is fully compatible with existing fabrication and integration technologies,providing a practical route to integrated lasing in wavelength-sensitive schemes.

关键词： amplifier tuning nonlinear

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