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Novel pressure and displacement sensors based on carbon nanotubes

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Chinese Physics B 2015年第1期24卷 560-563页

作者： Kh.S.Karimov khaulah sulaiman Zubair Ahmad Khakim M.Akhmedov A.Mateen GIK Institute of Engineering Sciences and Technology Topi District Swabi KPK 23640 Pakistan Physical Technical Institute of Academy of Sciences Rudaki Ave. 33 Dushanbe 734025 Tajikistan Low Dimensional Materials Research Centre (LDMRC) Department of Physics Faculty of Science University of Malaya 50603 Kuala Lumpur Malaysia Center for Innovative Development of Science and New Technologies of Academy of Sciences Rudaki Ave. 33 Dushanbe 734025 Tajikistan Faculty of Materials Science and Engineering Institute of Space Technology Islamabad 44000 Pakistan

We report newly designed pressure and displacement capacitive sensors based on a flexible paper–CNT *** carbon nanotube（CNT） powder was deposited on a thin paper substrate and was pressed at an elevated *** sheet resistance of the paper–CNT films was in the range of 2–4 kΩ/cm^2. The paper–CNT films were used to fabricate pressure and displacement sensors. The sensitivities of the pressure and the displacement sensors were found to be17.3 p F·m^2/k N and 0.93 10-3p F/μm, respectively. The experimental results were compared with the simulated data and they found good agreement with each other.

关键词： carbon nanotube sensors composite capacitance

Methodical review of the literature referred to the dye-sensitized solar cells: Bibliometrics analysis and road mapping

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Chinese Physics B 2019年第11期28卷 370-376页

作者： Karwan Wasman Qadir Qayyum Zafar Nader Ale Ebrahim Zubair Ahmad khaulah sulaiman Rizwan Akram Mohammad Khaja Nazeeruddin Department of Physics College of EducationSalahaddin University-Erbil44001-ErbilKurdistan RegionIraq Physics Education Department Faculty of EducationIshik University44001-ErbilIraq Department of Physics University of Management and Technology54000-LahorePakistan Centre for Research Services IPPPUniversity of Malaya 50603-Kuala LumpurMalaysia Centre for Advanced Materials(CAM) Qatar UniversityP.O.Box 2713 DohaQatar Department of Physics University of Malaya 50603-Kuala LumpurMalaysia College of Engineering Qassim UniversityBuraydah 51452Saudi Arabia Group for Molecular Engineering of Functional Materials Ecole Polytechnique F′ed′erale de Lausanne(EPFL)CH-1951 SionSwitzerland

This study presents a systematic review of the literature pertaining to dye-sensitized solar cells(DSSCs), in order to anticipate the direction and speed of change in technology trend. To study the general progression in DSSC research, we have assessed the evolution in annual DSSCs publications and their citations. Further, in order to identify the intellectual bases, we have also classified the journals, authors, institutes, and countries according to their scientific productivity in the field of DSSCs research during the period of 2007–2017.

关键词： bibliometric analysis dye-sensitized solar cells scientific productivity international cooperation network

Sensitivity enhancement of OD-and OD-CNT-based humidity sensors by high gravity thin film deposition technique

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Journal of Semiconductors 2015年第3期36卷 69-73页

作者： Kh.S.Karimov Noshin Fatima khaulah sulaiman M.Mahroof Tahir Zubair Ahmad A.Mateen Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Center for Innovative Development of Science and Technologies of Academy of Sciences Low Dimensional Materials Research Centre (LDMRC) Department of Physics Faculty of Science University of Malaya Saint Cloud State University Department of Chemistry and Earth Sciences Faculty of Materials Science and Engineering Institute of Space Technology

The humidity sensing properties of the thin films of an organic semiconductor material orange dye （OD） and its composite with CNTs deposited at high gravity conditions have been reported. Impedance, phase angle, ca- pacitance and dissipation of the samples were measured at 1 kHz and room temperature conditions. The impedance decreases and capacitance increases with an increase in the humidity level. It was found that the sensitivity of the OD-based thin film samples deposited at high gravity condition is higher than the samples deposited at low gravity condition. The impedances and capacitance sensitivities of the of the samples deposited under high gravity condition are 6.1 times and 1.6 times higher than the films deposited under low gravity condition.

关键词： orange dye sensor composite impedance capacitance

MEH-PPV/Alq_3-based bulk heterojunction photodetector

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Chinese Physics B 2013年第10期22卷 192-196页

作者： Zubair Ahmad Mahdi Hasan Suhail Issam Ibrahim Muhammad Wissam Khayer Al-Rawi khaulah sulaiman Qayyum Zafar Ahmad Sazali Hamzah Zurina Shaameri Low Dimensional Materials Research Center Department of PhysicsFaculty of ScienceUniversity of Malaya50603 Kuala LumpurMalaysia Department of Physics College of ScienceUniversity of BaghdadIraq Department of Physics College of ScienceUniversity of AnbarIraq Organic Synthesis Laboratory Institute of ScienceUniversiti Teknologi MARA40450 Shah AlamMalaysia

In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction （BHJ） photodiode. To prepare the BHJ blend, poly（2-methoxy-5（2P-ethylhexyloxy） phenyleneviny- lene （MEH-PPV） and aluminum-tris-（8-hydroxyquinoline）（Alq3） are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly（3, 4-ethylendioxytbiophene）：poly（styrensulfonate）（PE- DOT：PSS） is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT：PSS layer, followed by the lithium fluoride （LiF） and aluminium （A1） thin films deposition by thermal evaporation. The optical properties of the MEH-PPV：Alq3 blend thin films are investigated using photoluminescence （PL） and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current （lph/IDark） is found to be 1.24.

关键词： MEH-PPV Alq3 bulk heterojunction photodiode