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A Prediction Study on the Localization Policy of Improving the Satisfaction of Chinese Visitors to Japan by Using Matrix Factorization Techniques

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Journal of Systems Science and Information 2019年第6期10卷 510-531页

作者： Kaile ZHANG kenji watanabe Tomomi AOYAMA Architecture Civil Engineering and Industrial Management EngineeringNagoya Institute of TechnologyNagoya 466-8555Japan

Against the background of the rapid growth of Chinese tourists to Japan,by observing the changes in the patterns of Chinese visitors to Japan and probing into the insufficiency of researches in the past studies,it is believed that online travel reviews can be used to present the current situation of tourism industry and be of value to provide the basic data for long-term sustainable research after analysis,including how to increase Chinese tourists’satisfaction continuously and how to promote the service level of related *** this study,the unknown information caused by the cultural and regional differences in the reviews of Chinese visitors’to Japan is taken as the prediction object and the local tourists’travel comments as a reference ***,the factor decomposition technology and text mining technology are applied to predict the standards of services and projects that can meet the characteristics and demands of Chinese *** comments of Chinese and Japanese tourists who stayed at hotels in the Hakone scenic area from May 2018 to April 2019(time span:one year)are taken as the samples in this ***,the disparity in the purpose of travel between Chinese tourists and Japanese local tourists in this scenic spot can be effectively ***,it also clearly points out that due to a lack of understanding of Japanese food culture,Chinese visitors were in urgent need of relevant services and ***,this method will provide guidance for the growth of the local tourism industry and also demonstrate the feasibility of research *** the end,a complete analysis and calculation method for online comment text mining is established,which also provides guidance on improving the satisfaction of Chinese visitors to ***,this method can also be considered to apply in more tourists with the same cultural background.

关键词： online travel reviews matrix factorization latent factors Chinese visitors to Japan prediction study scenic area

Emergence of correlations in twisted monolayer-trilayer graphene heterostructures

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Chinese Physics B 2023年第9期32卷 74-78页

作者：周璋 kenji watanabe Takashi Taniguchi 林晓毛金海高鸿钧 School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China Advanced Materials Laboratory National Institute for Materials ScienceTsukuba305-0044Japan Institute of Physics Chinese Academy of SciencesBeijing 100190China

Twisted bilayer graphene heterostructures have recently emerged as a well-established platform for studying strongly correlated phases,such as correlated insulating,superconducting,and topological *** this notion to twisted multilayer graphene heterostructures has exhibited more diverse correlated phases,as some fundamental properties related to symmetry and band structures are correspondingly ***,we report the observations of correlated states in twisted monolayer-trilayer(Bernal stacked)graphene *** phases at integer fillings of the moire unit cell are revealed at a high displacement field and stabilized with a moderate magnetic field on the electron-doping side at a twist angle of 1.45°,where the lift of degeneracy at the integer fillings is observed in the Landau fan *** results demonstrate the effectiveness of moire engineering in an extended structure and provide insights into electric-field tunable correlated phases.

关键词： twisted multilayer graphene correlated states electric tuning

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

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Light(Science & Applications) 2024年第8期13卷 1557-1564页

作者： Magdalena Grzeszczyk Kristina Vaklinova kenji watanabe Takashi Taniguchi Konstantin SNovoselov Maciej Koperski Institute for Functional Intelligent Materials National University of SingaporeSingapore 117544Singapore Research Center for Functional Materials National Institute for Materials ScienceTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor ***,defects embedded in highly insulating crystals,like diamond,silicon carbide,or aluminum oxide,have been notoriously difficult to excite electrically due to their large internal *** address this challenge,we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride(hBN).The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect *** fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene,which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent *** our devices,the decay of electrons via tunneling pathways competed with radiative recombination,resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the *** enabled us to achieve a high-efficiency electrical excitation of intradefect transitions,exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap *** work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.

关键词： carbide tunneling defect

Field induced Chern insulating states in twisted monolayer–bilayer graphene

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Chinese Physics B 2024年第6期33卷 69-73页

作者：王政文韩英卓 kenji watanabe Takashi Taniguchi 姜宇航毛金海 School of Physical Science and CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China College of Materials Science and Optoelectronic Technology Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Advanced Materials Laboratory National Institute for Materials ScienceTsukuba 305-0044Japan

Unraveling the mechanism underlying topological phases, notably the Chern insulators(Ch Is) in strong correlated systems at the microscopy scale, has captivated significant research interest. Nonetheless, Ch Is harboring topological information have not always manifested themselves, owing to the constraints imposed by displacement fields in certain experimental configurations. In this study, we employ density-tuned scanning tunneling microscopy(DT-STM) to investigate the Ch Is in twisted monolayer–bilayer graphene(t MBG). At zero magnetic field, we observe correlated metallic *** under a magnetic field, a metal–insulator transition happens and an integer Ch I is formed emanating from the filling index s = 3 with a Chern number C = 1. Our results underscore the pivotal role of magnetic fields as a powerful probe for elucidating topological phases in twisted Van der Waals heterostructures.

关键词： Chern insulators strong correlation effects two-dimensional van der Waals heterostructure density-tuned scanning tunneling microscopy(DT-STM)

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

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Chinese Physics Letters 2017年第4期34卷 87-91页

作者： Shi-Li Yan Zhi-Jian Xie Jian-Hao Chen Takashi Taniguchi kenji watanabe International Center for Quantum Materials Peking University Beijing 100871 High Pressure Group National Institute for Materials Science 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan Collaborative Innovation Center of Quantum Matter Beijing 100871

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

关键词： Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors FET BP

Superlubricity enabled dry transfer of non-encapsulated graphene

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Chinese Physics B 2019年第2期28卷 434-438页

作者： Zhe Ying Aolin Deng Bosai Lyu Lele Wang Takashi Taniguchi kenji watanabe Zhiwen Shi Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education) School of Physics and AstronomyShanghai Jiao Tong University Collaborative Innovation Center of Advanced Microstructures National Institute for Materials Science

Transferring high-quality exfoliated graphene flakes onto different substrates while keeping the graphene free of polymer residues is of great importance, but at the same time very challenging. Currently, the only feasible way is the so-called all-dry "pick-and-lift" method, in which a hexagonal boron nitride(hBN) flake is employed to serve as a stamp to pick up graphene from one substrate and to lift it down onto another substrate. The transferred graphene samples, however,are always covered or encapsulated by hBN flakes, which leads to difficulties in further characterizations. Here, we report an improved "pick-and-lift" method, which allows ultra-clean graphene flakes to be transferred onto a variety of substrates without hBN coverage. Basically, by exploiting the superlubricity at the graphene/hBN stack interface, we are able to remove the top-layer hBN stamp by applying a tangential force and expose the underneath graphene.

关键词： superlubricity transfer graphene heterostructures

Deterministic and replaceable transfer of silver flakes for microcavities

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Frontiers of physics 2023年第3期18卷 139-146页

作者： Tingting Wang Zhihao Zang Yuchen Gao kenji watanabe Takashi Taniguchi Wei Bao Yu Ye State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Collaborative Innovation Center of Quantum Matter Beijing 100871China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba305-0044Japan Electrical&Computer Engineering University of Nebraska-LincolnLincolnNE 68588USA Yangtze Delta Institute of Optoelectronics Peking UniversityNantong 226010China

How to fabricate high-quality microcavities simply and at low cost without causing damage to environmentally sensitive active layers such as perovskites are crucial for the studies of exciton–polaritons,however,it remains challenging in the field of microcavity ***,once the top mirror is deposited,the detuning of the microcavity is fixed and there is no easy way to tune ***,we have developed a method for deterministically transferring silver mirrors,which is relatively simple and guarantees the active layer from damaging of high temperature,particle bombardment,etc.,during the deposition of the top ***,with the help of a glass probe,we demonstrate a replaceable silver transfer method to tune the detuning of the microcavity,thereby changing the coupling of photons and excitons *** developed deterministic and replaceable silver mirror transfer methods will provide the capability to fabricate high-quality and tunable microcavities and play an active role in the development of the exciton–polariton field.

关键词： silver microcavity transfer perovskite

Moiré Synaptic Transistor for Homogeneous-Architecture Reservoir Computing

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Chinese Physics Letters 2023年第11期40卷 100-107页

作者：王鹏飞陈墨雨谢永勤潘晨 kenji watanabe Takashi Taniguchi 程斌梁世军缪峰 Institute of Brain-Inspired Intelligence National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Institute of Interdisciplinary Physical Sciences School of ScienceNanjing University of Science and TechnologyNanjing 210094China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan

Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal *** tunable and reproducible dynamics in the single electronic device have been desired to implement the “reservoir” and the “readout” layer of reservoir computing ***-dimensional moiré materials,with an artificial lattice constant many times larger than the atomic length scale,are one type of most studied artificial quantum materials in community of material science and condensed-matter physics over the past *** materials are featured with gate-tunable periodic potential and electronic correlation,thus varying the electric field allows the electrons in the moiré potential per unit cell to exhibit distinct and reproducible dynamics,showing great promise in robust reservoir ***,we report that a moiré synaptic transistor can be used to implement the reservoir computing system with a homogeneous reservoir-readout *** synaptic transistor is fabricated based on an h-BN/bilayer graphene/h-BN moiré heterostructure,exhibiting ferroelectricity-like hysteretic gate voltage dependence of *** the magnitude of the gate voltage enables the moiré transistor to switch between long-term memory and shortterm memory with nonlinear *** employing the short-and long-term memories as the reservoir nodes and weights of the readout layer,respectively,we construct a full-moiré physical neural network and demonstrate that the classification accuracy of 90.8% can be achieved for the MNIST(Modified National Institute of Standards and Technology) handwritten digits *** work would pave the way towards the development of neuromorphic computing based on moiré materials.

关键词： transistor tunable reservoir

Gate-controlled localization to delocalization transition of flat band wavefunction in twisted monolayer–bilayer graphene

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Chinese Physics B 2023年第6期32卷 102-105页

作者：李思宇王政文薛禹承曹路 kenji watanabe Takashi Taniguchi 高鸿钧毛金海 Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China College of Materials Science and Optoelectronic Technology Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Advanced Materials Laboratory National Institute for Materials ScienceTsukuba 305-0044Japan

Twisted graphene systems with flat bands have attracted much attention for they are excellent platforms to research novel quantum phases. Recently, transport measurements about twisted monolayer–bilayer graphene(t MBG) have shown the existence of correlated states and topological states in this system. However, the direct observations of the band structures and the corresponding spatial distributions are still not sufficient. Here we show that the distributions of flat bands in t MBG host two different modes by scanning tunneling microscopy and spectroscopy(STM/S). By tuning our t MBG device from the empty filling state to the full filling state through the back gate, we observe that the distributions of two flat bands develop from localized mode to delocalized mode. This gate-controlled flat band wavefunction polarization is unique to the t MBG system. Our work suggests that t MBG is promising to simulate both twisted bilayer graphene(TBG) and twisted double bilayer graphene(t DBG) and would be an ideal platform to explore novel moiré physics.

关键词： graphene Van der Waals heterostructures scanning tunneling microscopy/spectroscopy