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Phonon-assisted upconversion in twisted two-dimensional semiconductors

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Light(Science & Applications) 2023年第1期12卷 89-98页

作者： Yuchen Dai Pengfei Qi Guangyi Tao Guangjie Yao Beibei Shi Zhixin liul Zhengchang liu Xiao He Pu Peng Zhibo Dang Liheng Zheng Tianhao Zhang Yongji Gong Yan Guan kaihui liu Zheyu Fang School of Physics State Key Laboratory for Mesoscopic PhysicsAcademy for Advanced Interdisciplinary StudiesCollaborative Innovation Center of Quantum MatterNano-optoelectronics Frontier Center of Ministry of EducationPeking University100871 BeijingChina Institute of Modern Optics Nankai UniversityTianjin Key Laboratory of Micro-scale Optical Information Science and Technology300350 TianjinChina Photonics Research Center School of PhysicsMOE Key Lab of Weak-Light Nonlinear Photonicsand Tianjin Key Lab of Photonics Materials and Technology for Information ScienceNankai University300071 TianjinChina School of Materials Science and Engineering Beihang University100191 BeijingChina Center for Physicochemical Analysis and Measurements in ICCAS Analytical Instrumentation CenterPeking University100871 BeijingChina

Phonon-assisted photon upconversion(UPC)is an anti-Stokes process in which incident photons achieve higher energy emission by absorbing *** letter studies phonon-assisted UPC in twisted 2D semiconductors,in which an inverted contrast between UPC and conventional photoluminescence(PL)of WSe2 twisted bilayer is emergent.A 4-fold UPC enhancement is achieved in 5.5°twisted bilayer while PL weakens by *** interlayer exciton conversion efficiency driven by lattice relaxation,along with enhanced pump efficiency resulting from spectral redshift,lead to the rotation-angle-dependent UPC *** counterintuitive phenomenon provides a novel insight into a unique way that twisted angle affects UPC and light-matter interactions in 2D ***,the UPC enhancement platform with various superimposable means offers an effective method for lighting bilayers and expanding the application prospect of 2D stacked van der Waals devices.

关键词： twisted semiconductors relaxation

Controlled on-chip fabrication of large-scale perovskite single crystal arrays for high-performance laser and photodetector integration

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Light(Science & Applications) 2023年第4期12卷 558-569页

作者： Zhangsheng Xu Xun Han Wenqiang Wu Fangtao Li Ru Wang Hui Lu Qiuchun Lu Binghui Ge Ningyan Cheng Xiaoyi Li Guangjie Yao Hao Hong kaihui liu Caofeng Pan CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 101400China School of Nanoscience and Technology University of Chinese Academy of SciencesBeijing 100049China College of Mechatronics and Control Engineering Shenzhen UniversityShenzhen 518060China Colllege of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Center on Nanoenergy Research School of Physical Science and TechnologyGuangxi UniversityNanning 530004China Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China College of Materials Science and Engineering Ocean University of ChinaQingdao 266100China State Key Laboratory for Mesoscopic Physics Frontiers Science Centre for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Dongguan 523808China

Metal halide perovskites possess intriguing optoelectronic properties,however,the lack of precise control of on-chip fabrication of the large-scale perovskite single crystal arrays restricts its application in integrated ***,we report a space confinement and antisolvent-assisted crystallization method for the homogeneous perovskite single crystal arrays spanning 100 square centimeter *** method enables precise control over the crystal arrays,including different array shapes and resolutions with less than 10%-pixel position variation,tunable pixel dimensions from 2 to 8 pm as well as the in-plane rotation of each *** crystal pixel could serve as a high-quality whispering gallery mode(WGM)microcavity with a quality factor of 2915 and a threshold of 4.14μJ cm^(-2).Through directly on-chip fabrication on the patterned electrodes,a vertical structured photodetector array is demonstrated with stable photoswitching behavior and the capability to image the input patterns,indicating the potential application in the integrated systems of this method.

关键词： arrays crystal precise

糖基化在新型冠状病毒侵染中的机制及药物研发中的应用

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化学进展 2021年第4期33卷 524-532页

作者：刘文杰刘凯会张彦伟王良张梦裔李静南开大学药学院和药物化学生物学国家重点实验室南开大学化学学院和天津化学化工协同创新中心天津300071

冠状病毒(Coronavirus,CoV)是一类具有包膜的正股单链RNA病毒,可感染人类和多种动物。2019年末,一种新的β-冠状病毒SARS-CoV-2(Severe acute respiratory syndrome-coronavirus-2)开始在人际间传播,该病毒引发的疾病"COVID-19"(Coronavirus disease 2019)对全球公共卫生构成严重威胁。糖基化是一种存在于蛋白质上的翻译后修饰,可影响蛋白质的折叠、稳定性及和受体之间的结合等,研究表明SARS-CoV-2包膜中的病毒嗜性决定因子-刺突蛋白(Spike,S)及宿主细胞上的主要受体血管紧张素转化酶2(Angiotensin-converting enzyme 2,ACE2)均为高度糖基化蛋白。为探明糖基化修饰在SARS-CoV-2病毒侵染及与宿主免疫应答中的作用,本文综述了该病毒的侵染机制,体外重组病毒S蛋白和宿主受体ACE2的糖基化类型及糖基化对病毒与宿主相互作用的影响,并提出基于糖基化的COVID-19诊断和药物研发新策略。

关键词：新型冠状病毒糖基化刺突蛋白诊断抗病毒药物

乳腺X线摄影、MRI及病理联合诊断乳腺癌分子分型

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中国医学影像技术 2023年第2期39卷 210-215页

作者：王雯琼杨蔚刘开惠刘召弟周晓平宁夏医科大学临床医学院宁夏银川750004 宁夏医科大学总医院放射科宁夏银川750004

目的观察乳腺X线摄影(MG)、MRI及病理联合诊断乳腺癌分子分型的价值。方法收集600例乳腺癌女性患者,包括Luminal A型147例,Luminal B型277例,人表皮生长因子受体2(HER-2)过表达型65例及三阴型111例;比较不同分子分型乳腺癌的MG、MRI及... 详细信息

目的观察乳腺X线摄影(MG)、MRI及病理联合诊断乳腺癌分子分型的价值。方法收集600例乳腺癌女性患者,包括Luminal A型147例,Luminal B型277例,人表皮生长因子受体2(HER-2)过表达型65例及三阴型111例;比较不同分子分型乳腺癌的MG、MRI及病理特征,行logistic回归分析,观察不同分子分型的独立影响因素;构建病理模型(模型1)、MG+病理模型(模型2)、MRI+病理模型(模型3)及MG+MRI+病理模型(模型4),评估其诊断价值,并以SHAP分析评估最佳诊断模型中各参数的贡献价值。结果组织学低分级浸润性导管癌、无腋窝淋巴结转移、MG假阴性、无恶性钙化及“流入型”时间-信号强度曲线(TIC)为Luminal A型乳腺癌的独立影响因素(P均<0.05),腋窝淋巴结转移、恶性钙化及毛刺征为Luminal B型的独立影响因素(P均<0.05),组织学高分级浸润性导管癌、恶性钙化、毛刺征、非肿块样强化(NME)及较高表观弥散系数为HER-2过表达型的独立影响因素(P均<0.05),组织学高分级浸润性导管癌、无恶性钙化及无毛刺征为三阴型的独立影响因素(P均<0.05)。模型2是诊断Luminal A型及HER-2过表达型乳腺癌的最佳模型[曲线下面积(AUC)=0.663、0.621],模型4是诊断Luminal B型及三阴型乳腺癌的最佳模型(AUC=0.649、0.642)。恶性钙化、腋窝淋巴结转移及毛刺征对诊断乳腺癌分子分型的贡献价值较大。结论MG、MRI及病理联合模型对诊断乳腺癌分子分型具有一定价值;恶性钙化、腋窝淋巴结转移及毛刺征的价值较大。

关键词：乳腺肿瘤乳腺X线摄影磁共振成像分子分型

High-Resolution Structure-Property Studies of Nanomaterials by In-situ Transmission Electron Microscopy

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High-Resolution Structure-Property Studies of Nanomaterials ...

二维材料范德华器件中界面的透射电子显微表征

2011中国材料研讨会

作者： Xuedong Bai,Peng Gao,kaihui liu,Zhi Xu,and Enge Wang Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

The in-situ transmission electron microscopy(TEM)method has been developed to probe the novel properties of *** is powerful in a way that it candirectly correlate the atomic-scale

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科学通报 2023年第22期68卷 2873-2885页

作者：郭泉林顾恬王悰张志斌刘开辉北京大学物理学院人工微结构和介观物理国家重点实验室北京100871 北京大学量子材料科学中心北京100871 广东省松山湖材料实验室东莞523808

二维材料范德华器件是以二维材料为基础组成的单元,依靠范德华相互作用构造的具有潜在颠覆性能的新器件,是近年来量子材料体系、电子器件领域以及半导体产业界的研究热点.二维范德华器件的性能与其界面息息相关,例如材料生长的质量受衬... 详细信息

二维材料范德华器件是以二维材料为基础组成的单元,依靠范德华相互作用构造的具有潜在颠覆性能的新器件,是近年来量子材料体系、电子器件领域以及半导体产业界的研究热点.二维范德华器件的性能与其界面息息相关,例如材料生长的质量受衬底表面的调控,电学器件的性能受界面接触电阻的影响等.因此,界面表征对材料质量的检测和器件工艺的优化至关重要.由于二维材料仅具有原子级厚度,必须用具有原子级及以上分辨能力的检测技术才能实现对其界面的直接表征.透射电子显微技术具有亚埃级空间分辨率、准确的元素分辨能力和原位探测技术等诸多优势,非常适合于二维范德华器件的界面表征.本文将全面综述二维材料范德华器件制备中3种主要界面的透射电子显微表征,包括二维材料生长过程中材料与衬底间界面的表征、异质结制造过程中平面界面和垂直界面的表征以及电子器件构造过程中金属电极与二维材料间接触界面的表征.通过梳理透射电子显微技术在这些界面处的原子级结构表征,揭示出二维材料范德华器件界面处的微观作用机制.这些关键的界面信息为阐明材料的生长机理、解析异质结的界面结构以及优化电子器件的性能提供了方向,同时为二维材料范德华器件在未来超大规模集成电路技术中的应用奠定了基础.

关键词：二维材料透射电子显微技术范德华器件界面表征

Engineering of multiferroic BiFeO grain boundaries with head-to-head polarization configurations

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Science Bulletin 2021年第8期66卷 771-776,M0003页

作者： Mingqiang Li Shuzhen Yang Ruochen Shi Linglong Li Ruixue Zhu Xiaomei Li Yang Cheng Xiumei Ma Jingmin Zhang kaihui liu Pu Yu Peng Gao Electron Microscopy Laboratory School of PhysicsPeking UniversityBeijing 100871China International Center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Peking University Shenzhen Graduate School Peking UniversityShenzhen 518055China TCL China Star Optoelectronics Technology Co. Ltd.Shenzhen 518132China Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China State Key Laboratory for Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Collaborative Innovation Centre of Quantum Matter Beijing 100871China State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua UniversityBeijing 100084China.

Confined low dimensional charges with high density such as two-dimensional electron gas(2 DEG)at interfaces and charged domain walls in ferroelectrics show great potential to serve as functional elements in future ***,stabilization and control of low dimensional charges is challenging,as they are usually subject to enormous depolarization ***,we demonstrate a method to fabricate tunable charged interfaces with~77°,86°and 94°head-to-head polarization configurations in multiferroic Bi Fe O_(3) thin films by grain boundary *** adjacent grains are cohesively bonded and the boundary is about 1 nm in width and devoid of any amorphous ***,the polarization remains almost unchanged near the grain boundaries,indicating the polarization charges are well compensated,i.e.,there should be two-dimensional charge gas confined at grain *** the tilt angle of the grain boundaries enables tuning the angle of polarization configurations from 71°to 109°,which in turn allows the control of charge density at the grain *** general and feasible method opens new doors for the application of charged interfaces in next generation nanoelectronics.

关键词： Head-to-head Grain boundaries Atomic structure BiFeO_(3)

临床特征、乳房X线摄影及MRI表现鉴别非肿块型乳腺癌与乳腺炎

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中国医学影像技术 2023年第11期39卷 1653-1658页

作者：吴林桦杨蔚周晓平刘开慧李健宁夏医科大学总医院放射科宁夏银川750004 宁夏医科大学临床医学院宁夏银川750004

目的观察联合应用临床特征、乳腺X线摄影(MG)及MRI表现鉴别非肿块型乳腺癌与乳腺炎的价值。方法回顾性收集经病理证实的390例非肿块样强化(NME)乳腺癌或乳腺炎患者为开发组,另前瞻性招募同一医院159例乳腺NME病变患者为验证组。对开... 详细信息

目的观察联合应用临床特征、乳腺X线摄影(MG)及MRI表现鉴别非肿块型乳腺癌与乳腺炎的价值。方法回顾性收集经病理证实的390例非肿块样强化(NME)乳腺癌或乳腺炎患者为开发组,另前瞻性招募同一医院159例乳腺NME病变患者为验证组。对开发组临床、MG及MRI资料行单因素及多因素logistic回归分析,筛选鉴别非肿块型乳腺癌与乳腺炎的独立相关因素并建立临床-MG、临床-MRI-及临床-MG-MRI-模型,于验证组进行验证;采用受试者工作特征曲线评估模型诊断效能,以SHAP分析评估临床-MG-MRI模型中各参数的贡献价值。结果共纳入549例549处NME病变,含408处乳腺癌及141处乳腺炎病灶,开发组含305处乳腺癌及85处乳腺炎,验证组含103处乳腺癌及56处乳腺炎。年龄、绝经状态,MG所示可疑钙化,MRI所示病变大小、分布、脂肪抑制T2WI信号强度、内部强化特征和时间-信号强度曲线类型均为鉴别非肿块型乳腺癌与乳腺炎的独立相关因素(P均<0.05)。临床-MG-MRI模型在开发组的曲线下面积(AUC)(0.91)高于临床-MG(0.79)及临床-MRI模型(0.87)(Z=2.341、5.067,P均<0.05),在验证组的AUC为0.90。临床-MG-MRI模型中,年龄、病变大小、可疑钙化和病变内部强化特征对于鉴别非肿块型乳腺癌与乳腺炎的贡献较大。结论联合应用临床特征、MG及MRI表现能有效鉴别非肿块型乳腺癌与乳腺炎。

关键词：乳腺肿瘤乳腺炎乳房X线摄影磁共振成像诊断鉴别非肿块样强化

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Polarizer-free polarimetric image sensor through anisotropic two-dimensional Ge Se

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Science China Materials 2021年第5期64卷 1230-1237页

作者： Xiaoting Wang Fang Zhong Jun Kang Can liu Ming Lei Longfei Pan Hailu Wang Fang Wang Ziqi Zhou Yu Cui kaihui liu Jianlu Wang Guozhen Shen Chongxin Shan Jingbo Li Weida Hu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences&Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Beijing Computational Science Research Center Beijing 100193China State Key Laboratory for Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou 450001China Institute of Semiconductors South China Normal UniversityGuangzhou 510631China

Light polarization could provide critical visual information(e.g., surface roughness, geometry, or orientation) of the imaged objects beyond prevailing signals of intensity and wavelength. The polarization imaging technology thus has a large potential in broad fields such as object detection. However, intricate polarization coding is often required in these fields, and the existing complicated lensed system and polarizers have limited the miniaturization capabilities of the integrated imaging sensor. In this study, we demonstrate the utilization of two-dimensional(2 D) in-plane anisotropic α-Ge Se semiconductor to realize the polarizer-free polarization-sensitive visible/near-infrared(VIS-NIR) photodetector/imager. As the key part of the sensor system, this prototype Au/Ge Se/Au photodetector exhibits impressive performances in terms of high sensitivity, broad spectral response, and fast-speed operation(~10^(3) A W^(-1), 400–1050 nm,and 22.7/49.5 μs). Further, this device demonstrates unique polarization sensitivity in the spectral range of 690–1050 nm and broadband absorption of light polarized preferentially in the y-direction, as predicted by the analysis of optical transition behavior in α-Ge Se. Then we have successfully incorporated the 2 D Ge Se device into an imaging system for the polarization imaging and captured the polarization information of the radiant target with a high contrast ratio of 3.45 at808 nm(NIR band). This proposed imager reveals the ability to sense dual-band polarization signals in the scene withoutpolarizers and paves the way for polarimetric imaging sensor arrays for advanced applications.

关键词： GeSe 2D anisotropic semiconductors polarization sensing detectors broadband polarimetric imaging