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SCAPS 1D Simulation of a Lead-Free Perovskite Photovoltaic Solar Cell Using Hematite as Electron Transport Layer

Modeling and Numerical Simulation of Material Science 2024年第4期14卷 97-106页

作者： Souleymane Tuo Konan Boua Marc Kevin Koffi Koffi Arnaud Kamenan joseph datte Abé Simon Yapi Faculty of Sciences and Technologies University of Man Man Cte dIvoire Faculty of Biologicals Sciences Department of Mathematics Physics and Chemistry University of Peleforo Gon Coulibaly Korhogo Cte dIvoire Department of Physics Normal Superior School Cocody Cte dIvoire Laboratory of Technologies University of Felix Houphouet Boigny of Cocody Abidjan Cte dIvoire

In recent years, there has been remarkable progress in the performance of metal halide perovskite solar cells. Studies have shown significant interest in lead-free perovskite solar cells (PSCs) due to concerns about the toxicity of lead in lead halide perovskites. CH3NH3SnI3 emerges as a viable alternative to CH3NH3PbX3. In this work, we studied the effect of various parameters on the performance of lead-free perovskite solar cells using simulation with the SCAPS 1D software. The cell structure consists of α-Fe2O3/CH3NH3SnI3/PEDOT: PSS. We analyzed parameters such as thickness, doping, and layer concentration. The study revealed that, without considering other optimized parameters, the efficiency of the cell increased from 22% to 35% when the perovskite thickness varied from 100 to 1000 nm. After optimization, solar cell efficiency reaches up to 42%. The optimization parameters are such that, for example, for perovskite: the layer thickness is 700 nm, the doping concentration is 1020 and the defect density is 1013 cm−3, and for hematite: the thickness is 5 nm, the doping concentration is 1022 and the defect concentration is 1011 cm−3. These results are encouraging because they highlight the good agreement between perovskite and hematite when used as the active and electron transport layers, respectively. Now, it is still necessary to produce real, viable photovoltaic solar cells with the proposed material layer parameters.

关键词： CH3NH3SnI3 α-Fe2O3 SCAPS 1D Thickness Doping Defect Optimisation

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