检索结果-南通市图书馆

High-power,electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si(100)heterogeneous substrate

引用

Light(Science & Applications) 2024年第8期13卷 1512-1523页

作者： Jialiang Sun jiajie lin Min Zhou Jianjun Zhang Huiyun Liu Tiangui You Xin Ou National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyCASShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences100049 BeijingChina College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences100190 BeijingChina Department of Electronic and Electrical Engineering University College LondonLondon WC1E 7JEUK

A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon *** the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains *** this study,we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si *** ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain *** this approach,we achieved state-of-the-art performance of the electrically-pumped,continuouswave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm-2,and output power exceeding 155mW per facet without facet coating in CW *** lasing at 120℃ and pulsed lasing at over 130℃ were *** generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

关键词： pumped power quantum

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

基于灰色关联分析方法和熵权法的纵扭超声振动螺旋磨削制孔工艺参数优化

引用

工具技术 2024年第1期58卷 38-42页

作者：林佳杰魏昕杨宇辉广东机电职业技术学院电气技术学院广东工业大学机电工程学院东莞理工学院机械工程学院

为优化纵扭超声振动辅助螺旋磨削制孔工艺参数和提高加工性能,以氧化锆陶瓷为研究对象,选取螺距、螺旋进给速度、主轴转速和超声振幅为工艺参数,设计了四因素三水平正交试验,并测量其磨削力、孔壁表面粗糙度和孔底表面粗糙度;借助灰色... 详细信息

为优化纵扭超声振动辅助螺旋磨削制孔工艺参数和提高加工性能,以氧化锆陶瓷为研究对象,选取螺距、螺旋进给速度、主轴转速和超声振幅为工艺参数,设计了四因素三水平正交试验,并测量其磨削力、孔壁表面粗糙度和孔底表面粗糙度;借助灰色关联分析方法和熵权法得到最优工艺参数为螺距3.5μm,螺旋进给速度875mm/min,主轴转速20000r/min,超声振幅6μm;螺距、超声振幅、主轴转速、螺旋进给速度对灰色关联度的影响程度依次降低。建立了灰色关联度、目标参数与工艺参数的经验预测模型,得到最优工艺参数为螺距3.0μm,螺旋进给速度875mm/min,主轴转速22000r/min,超声振幅6μm;孔壁和孔底的表面粗糙度分别为0.12789μm和0.38137μm,磨削力为9.482N,且关联度略优于正交试验最大关联度。

关键词：纵扭超声振动螺旋磨削孔加工灰色关联分析

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

基于改进点线特征的多源融合SLAM算法

引用

现代计算机 2024年第4期30卷 23-28页

作者：林嘉洁徐胜苏成悦陈元电刘力斌施振华广东工业大学物理与光电工程学院广州510000 广东工业大学先进制造学院揭阳522000

传统视觉SLAM算法在缺乏明显特征的场景或移动平台快速运动时,特征难以被检测和跟踪。提出了一种基于改进点线特征多源融合SLAM算法。前端通过相似短线段合并的策略改进EDlines线特征提取算法,提取长线段特征,后端融合了点、线特征和IM... 详细信息

传统视觉SLAM算法在缺乏明显特征的场景或移动平台快速运动时,特征难以被检测和跟踪。提出了一种基于改进点线特征多源融合SLAM算法。前端通过相似短线段合并的策略改进EDlines线特征提取算法,提取长线段特征,后端融合了点、线特征和IMU数据,并采用非线性优化方法进一步估计相机位姿。实验结果表明,改进EDlines线特征提取算法相比传统LSD线特征提取算法,其特征提取速度提高4倍。在EuRoc数据集的测试中,本算法在不同场景下都具有很好的定位和建图效果,且具有较高的鲁棒性和实时性,对机器人实时的避障导航应用有较大的参考价值。

关键词： SLAM算法 EDlines算法 IMU 点线特征非线性优化

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

积雪草苷通过调节钙信号稳态缓解肝纤维化

引用

中国细胞生物学学报 2024年第6期46卷 1143-1158页

作者：王磊杰林啟浩林佳杰王佳雪庄冬瑞金园庭闫志斌中国计量大学生命科学学院杭州310018 浙江理工大学生命科学与医药学院浙江省家蚕生物反应器和生物医药重点实验室杭州310018

肝纤维化是慢性肝病向肝硬化和肝细胞癌进展的重要过程。然而,目前尚未有临床批准的特效药物用于治疗肝纤维化。该研究旨在探究积雪草苷的抗肝纤维化作用,并阐明其作用机制。活化的肝星状细胞在肝纤维化的发生和发展过程中起着关键作用... 详细信息

肝纤维化是慢性肝病向肝硬化和肝细胞癌进展的重要过程。然而,目前尚未有临床批准的特效药物用于治疗肝纤维化。该研究旨在探究积雪草苷的抗肝纤维化作用,并阐明其作用机制。活化的肝星状细胞在肝纤维化的发生和发展过程中起着关键作用。在体外实验中,积雪草苷可显著抑制人肝星状细胞系LX-2的活化、增殖和迁移;之后对积雪草苷处理前后的肝星状细胞进行转录组测序揭示其作用机制,结果提示积雪草苷的抗纤维化作用依赖于钙信号通路;进一步的实验证实积雪草苷诱导胞质钙下调同时促进线粒体钙超载。此外,积雪草苷还可促进细胞凋亡、抑制炎症和降低活性氧水平。最后,在四氯化碳诱导的肝纤维化模型中,积雪草苷可显著缓解肝胶原沉积和钙通路异常,并抑制肝纤维化的发展。综上所述,积雪草苷通过介导钙信号通路改善肝纤维化进程,该研究为临床治疗肝纤维化疾病提供了有前景的候选化合物。

关键词：肝纤维化积雪草苷钙信号通路线粒体钙超载

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces

引用

Science China(Information Sciences) 2022年第8期65卷 238-246页

作者： Tingting JIN jiajie lin Tiangui YOU Xiaolei ZHANG Hao LIANG Yifan ZHU Jialiang SUN Hangning SHI Chaodan CHI Min ZHOU Robert KUDRAWIEC Shumin WANG Xin OU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences College of Information Science and Engineering Jiaxing University School of Information Science and Technology Shanghai Tech University Department of Semiconductor Materials Engineering Wroclaw University of Science and Technology Department of Microtechnology and Nanoscience Chalmers University of Technology

Heterogeneous integration of InP and GaS b on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nmthick GaS b thin layers were successfully transferred onto the Si substrates to form high-quality and ultrasmooth InP/Si and GaS b/Si templates using molecular beam epitaxy(MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaS b thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaS b/Si template, respectively. Thus, the chemical mechanical polishing(CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.

关键词： heterogeneous integration InP/Si GaSb/Si MBE ion-slicing technique selective chemical etching

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Si-based InGaAs photodetectors on heterogeneous integrated substrate

引用

Science China(Physics,Mechanics & Astronomy) 2021年第6期64卷 83-89页

作者： Chaodan Chi jiajie lin Xingyou Chen Chengli Wang Ziping Li Liping Zhang Zhanglong Fu Xiaomeng Zhao Hua Li Tiangui You Li Yue Jiaxiang Zhang Niefeng Sun Peng Gao Robert Kudrawiec Shumin Wang Xin Ou State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China China Nanhu Academy of Electronics and Information Technology Jiaxing 314000China Key Laboratory of Teraheriz Solid-State Technology Shanghai Instiute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The 13th Research Institute China Eletronics Technology Group CorporationShijiazhuang 050051China Science and Technology on Power Sources Laboratory Tianjin Institute of Power SourcesTianjin 300384China Department of Semiconductor Materials Engineering Wroclaw University of Science and TechnologyWroclaw 50-370Poland Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg 41296Sweden

In this paper,InGaAs p-i-n photodetectors(PDs)on an InP/SiO2/Si(InPOI)substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP *** quality of epitaxial layers on the InPOI substrate is similar to that on the InP *** photo responsivities of both devices measured at 1.55μm are comparable,which are about 0.808-0.828 A W^(-1).Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K,the peak detectivities of both PDs are *** general,the overall performance of the InPOI-based PD is comparable to the InP-based PD,demonstrating that the ion-slicing technology is a promising route to enable the highquality Si-based InP platform for the full photonic integration on a Si substrate.

关键词： InPOI InGaAs photodetector molecular beam epitaxy monolithic integration

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Effects of the windshield inclination angle on head/brain injuries in car-to-pedestrian collisions using computational biomechanics models

引用

Transportation Safety and Environment 2024年第2期6卷 1-12页

作者： Fang Wang Mingliang Wang lin Hu Ke Peng jiajie Yin Danqi Wang Liangliang Shi Zhou Zhou School of Automotive and Mechanical Engineering Changsha University of Science and TechnologyChangsha 410114HunanChina Hunan Province Key Laboratory of Safety Design and Reliability Technology for Engineering Vehicle Changsha University of Science and TechnologyChangsha 410114HunanChina State Key Laboratory of Vehicle NVH and Safety Technology China Automotive Engineering Research Institute Co.Ltd.Chongqing 401122China Division of Neuronic Engineering KTH Ro y al Institute of TechnologyStockholm 14152Sweden

Car-to-pedestrian collision(CPC)accidents occur frequently,and pedestrians often suffer serious head/brain *** major cause is the primary impact with the ***,we use an umerical sim ulation method to study the influence of the windshield in-clination angle of a passenger car on pedestrian head/brain injury due to CPC *** range of the windshield inclination angle was set at 24°-50°,with an interval of 2°.The results show that the windshield angle significantly affects the pedestrian kine-matics and exerts different effects on the head injury when evaluating with various head injury *** the head peak linear/rotational acceleration and acceleration-based head injury criterion(HIC)/rotational injury criterion(RIC),the predictions at the secondary impact stage have no clear relationship with the windshield angle(R^(2)=0.04,0.07,0.03 and 0.26,respectively)and their distributions are *** the primary impact,the peak linear acceleration and HIC show a weak trend of first decreasing and then increasing with the increasing of the windshield angle,and the rotational acceleration and RIC tend to remain relatively *** the cum ulative strain dama ge measure(CSDM)criterion,the predictions at the primary impact are slightly lower than those at the secondary impact,and the trend of first decreasing and then increasing with the increase in the windshield angle is observed at both impact *** the windshield inclination angle is approximately 32°-40°,the head injury severity in both impact phases is generally lower than that predicted at other windshield angles.

关键词： car-to-pedestrian collision(CPC) head/brain injury head injury criterion(HIC) windshield inclination angle computa-tional biomechanics model(CPCBM)

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Super enhancers targeting ZBTB16 in osteogenesis protect against osteoporosis

引用

骨研究:英文版 2023年第3期11卷 532-547页

作者： Wenhui Yu Zhongyu Xie Jinteng Li jiajie lin Zepeng Su Yunshu Che Feng Ye Zhaoqiang Zhang Peitao Xu Yipeng Zeng Xiaojun Xu Zhikun Li Pei Feng Rujia Mi Yanfeng Wu Huiyong Shen Department of Orthopedics The Eighth Affiliated HospitalSun Yat-sen UniversityShenzhen 518003PR China Shenzhen Key Laboratory of Ankylosing Spondylitis Shenzhen 518003PR China Department of Orthopedics Sun Yat-sen Memorial HospitalSun Yat-sen UniversityGuangzhou 510120PR China Center for Biotherapy The Eighth Affiliated HospitalSun Yat-sen UniversityShenzhen 518003PR China

As the major cell precursors in osteogenesis, mesenchymal stem cells(MSCs) are indispensable for bone homeostasis and development. However, the primary mechanisms regulating osteogenic differentiation are controversial. Composed of multiple constituent enhancers, super enhancers(SEs) are powerful cis-regulatory elements that identify genes that ensure sequential differentiation. The present study demonstrated that SEs were indispensable for MSC osteogenesis and involved in osteoporosis development. Through integrated analysis, we identified the most common SE-targeted and osteoporosis-related osteogenic gene,ZBTB16. ZBTB16, positively regulated by SEs, promoted MSC osteogenesis but was expressed at lower levels in ***, SEs recruited bromodomain containing 4(BRD4) at the site of ZBTB16, which then bound to RNA polymerase IIassociated protein 2(RPAP2) that transported RNA polymerase Ⅱ(POL Ⅱ) into the nucleus. The subsequent synergistic regulation of POL Ⅱ carboxyterminal domain(CTD) phosphorylation by BRD4 and RPAP2 initiated ZBTB16 transcriptional elongation, which facilitated MSC osteogenesis via the key osteogenic transcription factor SP7. Bone-targeting ZBTB16 overexpression had a therapeutic effect on the decreased bone density and remodeling capacity of Brd4^(fl/fl)Prx1-cre mice and osteoporosis(OP) ***, our study shows that SEs orchestrate the osteogenesis of MSCs by targeting ZBTB16 expression, which provides an attractive focus and therapeutic target for osteoporosis.

关键词： B16 osteoporosis osteogenesis

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

引用

Chinese Physics B 2020年第7期29卷 481-488页

作者： Shuyan Zhao Yuxin Song Hao Liang Tingting Jin jiajie lin Li Yue Tiangui You Chang Wang Xin Ou Shumin Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 China Department of Microtechnology and Nanoscience Chalmers University of TechnologyGothenburg 41296Sweden

Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on *** thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam *** grown on GaAsOI are more dangerous than those on InPOI due to a limited critical *** intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest *** simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial *** without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.

关键词： Ⅲ-VOI template finite element method(FEM) critical thickness

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

microRNA与靶基因相互调控机制的研究进展

引用

科学通报 2021年第24期66卷 3123-3140页

作者：赵健志李欢欢刘柯欣林嘉杰孙绍光河北医科大学生物化学与分子生物学教研室心血管医学研究中心石家庄050017

microRNA(miRNA)是一类由内源基因编码的长度约22个核苷酸的单链非编码RNA分子,其通过剪切信使RNA或非编码RNA、沉默或激活转录、primary mi RNA(pri-miRNA)加工及mRNA翻译,调控几乎所有细胞增殖分化、个体生长发育及内环境稳态.大量研... 详细信息

microRNA(miRNA)是一类由内源基因编码的长度约22个核苷酸的单链非编码RNA分子,其通过剪切信使RNA或非编码RNA、沉默或激活转录、primary mi RNA(pri-miRNA)加工及mRNA翻译,调控几乎所有细胞增殖分化、个体生长发育及内环境稳态.大量研究已对miRNA的生物发生和调控机制进行了清晰阐述.然而,关于miRNA的转换机制,尤其是miRNA在特定条件下的快速变化,仍尚未解决.近年来研究发现,靶基因能以序列依赖性方式调控miRNA的生成和降解,表明miRNA和靶基因之间的调控不是单向的,而是相互调控.本文详细概述靶基因调控miRNA的最新进展,归纳二者相互作用的条件和机制,提出miRNA转换的研究方向,以期为深入研究机体内miRNA与靶基因的相互作用及开发miRNA靶向治疗药物提供理论基础.

关键词： microRNA 靶基因诱导的miRNA降解拖尾修剪靶基因介导的miRNA保护

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：