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Enriched electrophilic oxygen species facilitate acidic oxygen evolution on Ru-Mo binary oxide catalysts

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Nano Research 2024年第3期17卷 1165-1172页

作者： Yaya Wang Yunzhou Wen Yumeng Cheng Xinhong Chen Mengjiao Zhuansun Tongbao Wang Jun Li Debora Meira huarui sun Jun Wei Jia Zhou Yuhang Wang Sisi He Shenzhen Key Laboratory of Flexible Printed Electronics Technology Harbin Institute of Technology(Shenzhen)University TownShenzhen 518055China School of Science Harbin Institute of Technology(Shenzhen)University TownShenzhen 518055China Institute of Functional Nano&Soft Materials(FUNSOM) Jiangsu Key Laboratory of Advanced Negative Carbon TechnologiesSoochow UniversitySuzhou 215123China Frontiers Science Center for Transformative Molecules Shanghai Jiao Tong UniversityShanghai 200240China Science Division Canadian Light SourceSaskatoonSKS7N 2V3Canada Photon Science Division Argonne National LaboratoryLemontIL60439USA School of Materials Science and Engineering Harbin Institute of Technology(Shenzhen)University TownShenzhen 518055China

The polymer electrolyte membrane(PEM)electrolyzers are burdened with costly iridium(Ir)-based catalysts and high operation overpotentials for the oxygen evolution reaction(OER).The development of earth-abundant,highly active,and durable electrocatalysts to replace Ir is a critical step in reducing the cost of green hydrogen *** we develop a Ru5Mo4Ox binary oxide catalyst that exhibits high activity and stability in acidic *** electron-withdrawing property of Mo enriches the electrophilic surface oxygen species,which promotes acidic OER to proceed via the adsorbate evolution *** a result,we achieve a 189 mV overpotential at 10 mA·cm^(-2) and a Tafel slope of 48.8 mV·dec^(-1).Our catalyst demonstrates a substantial 18-fold increase in intrinsic activity,as evaluated by turnover frequency,compared to commercially available RuO_(2) and IrO_(2) ***,we report a stable OER operation at 10 mA·cm^(-2) for 100 h with a low degradation rate of 2.05 mV·h^(-1).

关键词： electrocatalysis oxygen evolution reaction(OER) ruthenium(Ru)-based oxide molybdenum electrophilic oxygen

Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

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Chinese Physics B 2019年第6期28卷 105-109页

作者： Kang Liu Jiwen Zhao huarui sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

关键词： GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser

Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints

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Nano Research 2022年第9期15卷 8470-8478页

作者： Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo huarui sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D films can greatly promote layer-dependent physical studies and device ***,an optical method has been developed for simple,high throughput,and accurate determination of the layer number for Au-assisted exfoliated MoS_(2)and WS_(2)films in a broad thickness *** method is based on quantitative analysis of layer-dependent white light reflection spectra(WLRS),revealing that the intensity of exciton-induced reflection peaks can be used as a clear indicator for identifying the layer *** simple yet robust method will facilitate fundamental studies on layer-dependent optical,electrical,and thermal properties and device applications of 2D *** technique can also be readily combined with photoluminescence(PL)and Raman spectroscopies to study other layer-dependent physical properties of 2D materials.

关键词： Au-assisted exfoliation MoS_(2)and WS_(2) layer identification white light reflection spectra excitonic peaks

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang huarui sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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学以致用——浅析美国大学物理中的电磁学

物理与工程 2018年第5期28卷 114-118页

作者：孙华锐哈尔滨工业大学(深圳)理学院广东深圳518055

学会运用物理知识解决实际生活和工作中遇到的科学和工程问题是大学物理课程的主要教学目标之一。美国大学物理教学的侧重点就包括培养学生对物理知识运用的能力。本文以大学物理中"电磁学"部分为例,通过对美国大学物理教材章节内容设... 详细信息

学会运用物理知识解决实际生活和工作中遇到的科学和工程问题是大学物理课程的主要教学目标之一。美国大学物理教学的侧重点就包括培养学生对物理知识运用的能力。本文以大学物理中"电磁学"部分为例,通过对美国大学物理教材章节内容设置的分析,总结出美国大学物理教材在知识点广度、新概念引入、数学推导、章节归类和前后逻辑衔接等方面的特点;同时结合与国内大学物理课程对应内容的比较,浅谈"电磁学"中上述要素在"学以致用"中的作用。

关键词：大学物理美国教材电磁学知识运用

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星源照射双/多基地SAR成像

雷达学报（中英文） 2023年第1期12卷 13-35页

作者：武俊杰孙稚超吕争杨建宇李财品孙华瑞陈天夫赵良波任航电子科技大学成都611731 中国空间技术研究院遥感卫星总体部北京100094 中国空间技术研究院西安分院西安710100 中国资源卫星数据与应用中心北京100094

星源照射双/多基地合成孔径雷达(SAR),采用卫星发射,卫星、临近空间、飞机、地面等平台接收,实现对地海面场景和目标的高分辨成像。该技术具有可成像范围广、隐蔽性好、抗干扰能力强等优点,且可以通过波束调控实现扫描、聚束、滑动聚束... 详细信息

星源照射双/多基地合成孔径雷达(SAR),采用卫星发射,卫星、临近空间、飞机、地面等平台接收,实现对地海面场景和目标的高分辨成像。该技术具有可成像范围广、隐蔽性好、抗干扰能力强等优点,且可以通过波束调控实现扫描、聚束、滑动聚束等多种组合成像模式,从而获取更加丰富的成像信息,具有十分广阔的民用和军事应用前景。目前,国内外针对星源照射双/多基地SAR成像技术开展了多年的研究,积累了诸多研究成果。该文分别从系统组成、构型方法、回波模型、成像方法、收发同步与试验验证等方面对该技术进行阐述与分析,同时对相关的研究工作进行较系统的回顾,并展望了星源照射双/多基地SAR成像技术未来的发展方向。

关键词：合成孔径雷达双基SAR 星载平台成像算法试验验证

稻壳基SiO_(2)作为增强填料对PVA薄膜性能的影响

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塑料 2022年第4期51卷 92-97页

作者：丁艳红王保营闫会杰赵彬张岩孙华蕊河南牧业经济学院包装与印刷工程学院河南郑州450046

为高效利用稻壳资源,以稻壳为原材料,采用高温煅烧、机械球磨的方法制备二氧化硅(SiO_(2))材料,通过优化条件制备出微纳级稻壳SiO_(2)材料。并且将其作为增强填料与聚乙烯醇(PVA)复合,对复合薄膜的拉伸强度、水蒸气透过率、表面形貌、... 详细信息

为高效利用稻壳资源,以稻壳为原材料,采用高温煅烧、机械球磨的方法制备二氧化硅(SiO_(2))材料,通过优化条件制备出微纳级稻壳SiO_(2)材料。并且将其作为增强填料与聚乙烯醇(PVA)复合,对复合薄膜的拉伸强度、水蒸气透过率、表面形貌、透光率与雾度、热稳定性等性能进行表征分析,研究结果表明,当煅烧温度为700℃时,制备出的稻壳SiO_(2)的产率较高,其中,SiO_(2)含量约为42.92%;SEM分析结果表明,球磨时间设置为8 h时,微纳米尺寸非常均匀;当稻壳SiO_(2)的含量为1%时,复合膜的力学性能、阻湿性和热稳定性能均得到明显提升,与纯PVA膜相比,拉伸强度提高了22.18%,第二阶段的热解温度提高至230~380℃。因此,稻壳制备的微纳级SiO_(2)可以作为提高稻壳资源利用率与增强PVA薄膜性能的途径之一。

关键词：稻壳SiO_(2) 高温煅烧机械球磨聚乙烯醇复合膜

导热金刚石同大尺寸芯片的低温烧结银连接工艺

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固体电子学研究与进展 2021年第1期41卷 65-68页

作者：赵柯臣赵继文代兵张旭郭怀新孙华锐朱嘉琦哈尔滨工业大学特种环境复合材料技术国防科技重点实验室哈尔滨150080 哈尔滨工业大学工业和信息化部微纳光电信息系统重点实验室深圳518055 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室南京210016

通过高导热银浆实现了连接大面积(>100 mm^(2))半导体硅片和金刚石的低温低压烧结技术。通过对金刚石表面镀覆金属薄膜,增强同烧结银界面处固态原子扩散,开发了商用烧结银膏在200℃下低温烧结工艺,得到金刚石-硅的均匀连接界面,计算得... 详细信息

通过高导热银浆实现了连接大面积(>100 mm^(2))半导体硅片和金刚石的低温低压烧结技术。通过对金刚石表面镀覆金属薄膜,增强同烧结银界面处固态原子扩散,开发了商用烧结银膏在200℃下低温烧结工艺,得到金刚石-硅的均匀连接界面,计算得到孔隙率约为9.88%,中间烧结银层等效热阻约为1.38×10^(-5)m^(2)·K/W。

关键词：低温烧结银芯片散热金刚石大尺寸连接

基于无人机遥感的盐渍化土壤有机质反演方法研究

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地球信息科学学报 2024年第3期26卷 736-752页

作者：王玮莹彭金榜朱婉雪杨斌刘振公华锐王俊栋杨婷娄金勇孙志刚中国科学院地理科学与资源研究所北京100101 中国科学院大学资源与环境学院北京100049 中科山东东营地理研究院东营257000 长光禹辰信息技术与装备(青岛)有限公司青岛266000

土壤有机质含量是衡量土壤肥力的重要指标,对粮食生产具有重要影响。我国滨海盐碱地分布广阔,土壤有机质呈现显著的空间异质性。传统的“实地采集-实验测量”的方法费时费力,难以快速描绘盐碱地区土壤有机质含量的空间分布特征。因此,... 详细信息

土壤有机质含量是衡量土壤肥力的重要指标,对粮食生产具有重要影响。我国滨海盐碱地分布广阔,土壤有机质呈现显著的空间异质性。传统的“实地采集-实验测量”的方法费时费力,难以快速描绘盐碱地区土壤有机质含量的空间分布特征。因此,采用遥感技术对土壤有机质含量进行高效且精准地反演,可以快速了解土壤肥力,从而调整与优化农业生产与管理。本研究以黄河三角洲典型滨海盐碱地裸土(0~10 cm土层)为研究对象,通过提取土壤的无人机遥感光谱与空间纹理信息,构建并筛选遥感指数。分别采用多元线性逐步回归、偏最小二乘以及随机森林模型对土壤有机质含量进行反演,并对比分析耕作与未耕作处理对反演的影响,同时探究融入对土壤盐分含量敏感的遥感信息是否可提高盐碱地区土壤有机质的反演精度。研究结果表明:(1)在土壤有机质含量反演中,随机森林模型的反演精度(R2为0.83~0.95)显著高于多元线性逐步回归(R2为0.26~0.69)和偏最小二乘模型(R2为0.37~0.72);(2)与未耕作土壤(R2为0.26~0.95)相比,耕作处理下的土壤有机质的反演精度较高(R2为0.54~0.94),即土壤的耕作处理能提高光谱指数对于土壤有机质含量的响应,从而提升土壤有机质含量的反演精度,为更加精准地监测土壤有机质提供新思路;(3)融入遥感纹理信息或土壤盐分含量信息(盐分实测值和盐分敏感指数)可显著提高土壤有机质反演精度。本研究将为提升田块尺度滨海盐渍化农田的土壤有机质含量反演提供理论与技术支撑,从而促进滨海盐渍化地区现代化农业的发展。

关键词：土壤有机质反演无人机多光谱遥感土壤盐分光谱指数盐碱地裸土耕作未耕作