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Chinese Physics Letters 2017年第9期34卷 95-99页

作者： Zhao-Zhao Hou Gui-Lei Wang Jin-Juan xiang Jia-Xin Yao Zhen-hua Wu Qing-Zhu Zhang hua-xiang yin Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 University of Chinese Academy of Sciences Beijing 100049

A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.

关键词： Dielectrics and SiGe Epitaxial Substrates Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

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Chinese Physics Letters 2018年第5期35卷 110-114页

作者： Zhao-Zhao Hou Gui-Lei Wang Jia-Xin Yao Qing-Zhu Zhang hua-xiang yin Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 University of Chinese Academy of Sciences Beijing 100049

We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.

关键词： FB Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-hua Wu Hong-Bin Zhao Qing-Zhu Zhang hua-xiang yin Jun Luo Wen-Wu Wang Hai-Ling Tu Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL) and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(I_(DS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(DD)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

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Chinese Physics B 2017年第2期26卷 461-466页

作者： Xue-Li Ma Hong Yang Jin-Juan xiang Xiao-Lei Wang Wen-Wu Wang Jian-Qi Zhang hua-xiang yin, Hui-Long Zhu Chao Zhao Integrated Circuit Advanced Process R ＆ D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China National Center for Nanoscience and Technology Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

关键词： Al-doped HfO2 ultrathin film phase transition thermodynamics kinetics

CO_2, H_2O exchange and stomatal regulation of regenerated Camptotheca acuminata plantlets during ex vitro acclimatization

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Journal of Forestry Research 2006年第4期17卷 273-276页

作者： WANG Hui-mei LI Yan-hua GAO yin-xiang ZU Yuan-gang Key Laboratory of Forest Plant Ecology the Ministry of Education Northeast Forestry University Harbin 150040 P. R. China

For finding the changes in CO2, H20 exchange and their stomatal regulation during ex vitro acclimatization of regenerated Camptotheca acuminata plantlets, the net photosynthesis rate （Pn）, respiration rate （Ro）, light compensation point （Lc） and light saturation point （Ls）, transpiration rate （Tr）, stomatal conductance （gs） and water use efficiency（WUE） were measured during 37 days of ex vitro acclimatization. The results showed that Pn sharply increased until 29 days, then slightly decreased. A substantial decrease in Lc and a substantial increase of Ls in the former two weeks were observed, indicating the light regime enlargement for effective leaf photosynthesis. Tr and gs abruptly decreased during the first week then linearly increased until 29days ex vitro acclimatization, reflecting the strong regulation effect of stomata on water changes of ex vitro acclimating plantlets. Stomatal regulation effect on CO2 exchange was different from that on water exchange, i.e. P, was almost independent of gs during the first week, while P. was significantly correlated with gs thereafter （i.e. dual patterns）. Different from dual patterns of gs-Pn relation, the Tr monotonously linearly increased with gs. Furthermore, WUE was almost independent on gs during the first week, while a marked decreasing tendency with gs was found thereafter. At the beginning of the acclimatization, WUE was mainly determined by photosynthetic capacity, while transpiration becomes a main determinant factor for WUE from 7 to 37 days＇ acclimatization.

关键词： Camptotheca acuminate Acclimatization Photosynthesis Transpiration Water use efficiency Relation between stomatal conductance (gs) and net photosynthesis rate (Pn) gs-WUE relation

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

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Chinese Physics B 2022年第1期31卷 529-534页

作者： Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai hua-xiang yin Wen-Wu Wang Integrated Circuit Advanced Process Center(ICAC) Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is *** is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn ***,the channel length dependence on NBTI is more serious than that on *** the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is *** extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for *** mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

关键词： bias temperature instability(BTI) channel length stress FinFET

Investigation of bubbles escape behavior from low basicity mold flux for high-Mn high-Al steels using 3D X-ray microscope

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International Journal of Minerals,Metallurgy and Materials 2025年第1期32卷 102-110页

作者： Qiang Liu xiang Li Shen Du Ming Gao Yanbin yin Jiongming Zhang State Key Laboratory of Advanced Metallurgy University of Science and Technology BeijingBeijing 100083China

During the continuous casting process of high-Mn high-Al steels,various types of gases such as Ar need to escape through the top of the *** which,the behavior of bubbles traversing the liquid slag serves as a restrictive link,closely associated with viscosity and the thickness of liquid *** contrast to two-dimensional surface observation,three-dimensional(3D)analysis method can offer a more intuitive,accurate,and comprehensive ***,this study employs a 3D X-ray microscope(3D-XRM)to obtained spatial distribution and 3D morphological characteristics of residual bubbles in mold flux under different basicity of liquid slag,different temperatures,and different holding *** results indicate that as basicity of slag increases from 0.52 to 1.03,temperature increases from 1423 to 1573 K,the viscosity of slag decreases,the floating rate of bubbles *** addition,when holding time increases from 10 to 30 s,the bubbles floating distance increases,and the volume fraction and average equivalent sphere diameter of the bubbles solidified in the mold flux gradually *** one word,increasing the basicity,temperature,and holding time leading to an increase in the removal rate of bubbles especially for the *** findings of bubbles escape behavior provide valuable insights into optimizing low basicity mold flux for high-Mn high-Al steels.

关键词： mold flux low basicity bubbles three-dimensional X-ray microscope viscosity

Advancements and Challenges in Organic–Inorganic Composite Solid Electrolytes for All‑Solid‑State Lithium Batteries

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Nano-Micro Letters 2025年第1期17卷 46-97页

作者： Xueyan Zhang Shichao Cheng Chuankai Fu Geping yin Liguang Wang Yongmin Wu hua Huo State Key Laboratory of Space Power‑Sources School of Chemistry and Chemical EngineeringHarbin Institute of TechnologyHarbin 150001People’s Republic of China College of Chemical and Biological Engineering Zhejiang UniversityHangzhou 310058People’s Republic of China State Key Laboratory of Space Power-Sources 2965 Dongchuan RoadMinhang DistrictShanghai 200240People’s Republic of China

To address the limitations of contemporary lithium-ion batteries,particularly their low energy density and safety concerns,all-solid-state lithium batteries equipped with solid-state electrolytes have been identified as an up-and-coming *** the various SEs,organic–inorganic composite solid electrolytes(OICSEs)that combine the advantages of both polymer and inorganic materials demonstrate promising potential for large-scale ***,OICSEs still face many challenges in practical applications,such as low ionic conductivity and poor interfacial stability,which severely limit their *** review provides a comprehensive overview of recent research advancements in ***,the influence of inorganic fillers on the main functional parameters of OICSEs,including ionic conductivity,Li+transfer number,mechanical strength,electrochemical stability,electronic conductivity,and thermal stability are systematically *** lithium-ion conduction mechanism of OICSE is thoroughly analyzed and concluded from the microscopic ***,the classic inorganic filler types,including both inert and active fillers,are categorized with special emphasis on the relationship between inorganic filler structure design and the electrochemical performance of ***,the advanced characterization techniques relevant to OICSEs are summarized,and the challenges and perspectives on the future development of OICSEs are also highlighted for constructing superior ASSLBs.

关键词： Composite solid electrolytes Inorganic filler Interfacial stability Li-ion conduction mechanism Characterization techniques

Multiple Tin Compounds Modified Carbon Fibers to Construct Heterogeneous Interfaces for Corrosion Prevention and Electromagnetic Wave Absorption

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Nano-Micro Letters 2025年第1期17卷 507-527页

作者： Zhiqiang Guo Di Lan Zirui Jia Zhenguo Gao Xuetao Shi Mukun He hua Guo Guanglei Wu Pengfei yin College of Science Sichuan Agricultural UniversityYa’an 625014People’s Republic of China School of Materials Science and Engineering Hubei University of Automotive TechnologyShiyan 442002People’s Republic of China Institute of Materials for Energy and Environment State Key Laboratory of Bio‑Fibers and Eco‑TextilesCollege of Materials Science and EngineeringQingdao UniversityQingdao 266071People’s Republic of China Shaanxi Key Laboratory of Macromolecular Science and Technology School of Chemistry and Chemical EngineeringNorthwestern Polytechnical UniversityXi’anShaanxi 710072People’s Republic of China

Currently,the demand for electromagnetic wave(EMW)absorbing materials with specific functions and capable of withstanding harsh environments is becoming increasingly ***-component interface engineering is considered an effective means to achieve high-efficiency EMW ***,interface modulation engineering has not been fully discussed and has great potential in the field of EMW *** this study,multi-component tin compound fiber composites based on carbon fiber(CF)substrate were prepared by electrospinning,hydrothermal synthesis,and high-temperature thermal *** utilizing the different properties of different substances,rich heterogeneous interfaces are *** effectively promotes charge transfer and enhances interfacial polarization and conduction *** prepared SnS/SnS_(2)/SnO_(2)/CF composites with abundant heterogeneous interfaces have and exhibit excellent EMW absorption properties at a loading of 50 wt%in epoxy *** minimum reflection loss(RL)is−46.74 dB and the maximum effective absorption bandwidth is 5.28 ***,SnS/SnS_(2)/SnO_(2)/CF epoxy composite coatings exhibited long-term corrosion resistance on Q235 steel ***,this study provides an effective strategy for the design of high-efficiency EMW absorbing materials in complex and harsh environments.

关键词： Electrostatic spinning Component regulation Heterogeneous interfaces Electromagnetic wave absorption Corrosion protection

PDLLA/HA/NGF神经导管体内外降解研究

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武汉理工大学学报 2009年第19期31卷 57-59,66页

作者：李建华殷湘慧万涛闫玉华武汉理工大学生物材料与工程研究中心武汉430070

制备一种复合型PDLLA/HA/NGF神经导管,通过体内外降解实验,研究分析材料在体外降解过程中介质pH值、质量损耗、NGF释放等规律,以及体内降解材料微观形貌变化等,对材料的降解性能进行评价。结果表明,该复合型神经导管具有降低PDLLA的酸... 详细信息

制备一种复合型PDLLA/HA/NGF神经导管,通过体内外降解实验,研究分析材料在体外降解过程中介质pH值、质量损耗、NGF释放等规律,以及体内降解材料微观形貌变化等,对材料的降解性能进行评价。结果表明,该复合型神经导管具有降低PDLLA的酸自催化降解速度,NGF含量也会影响材料降解性能和释放性能。从而为优化材料组成及调控降解性能提供依据。

关键词：神经导管 PDLLA/HA/NGF 体内外降解酸自催化