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Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

Chinese Physics C 2008年第9期32卷 769-772页

作者：邓居智陈荣 SEKIGUCHI Tetsuhiro BABA Yuji hirao norie HONDA Mitsunori Key Laboratory of Nuclear Resources and Environment (East China Institute of Technology) Ministry of Education Synchrotron Radiation Research Center Japan Atomic Energy Agency

Thin silicon phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser. The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure （NEXAFS）. In the NEXAFS spectra of the thin sample, two clear peaks which were assigned to Is → σ^＊Si-N and 1s→ σ^＊Si-Cl appeared around 1847.2 eV and 1843.1 eV respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-Cl bond was out of the molecular plane.

关键词： near edge X-ray absorption fine structure (NEXAFS) orientation silicon phthalocyanine dichloride polarization dependence

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Contracted interlayer distance in graphene/sapphire heterostructure

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Nano Research 2015年第5期8卷 1535-1545页

作者： Shiro Entani Liubov Yu. Antipina Pavel V. Avramov Manabu Ohtomo Yoshihiro Matsumoto norie hirao Iwao Shimoyama Hiroshi Naramoto Yuji Baba Pavel B. Sorokin Seiji Sakai Advanced Science Research Center Japan Atomic Energy Agency Tokai Ibaraki 319-1195 Japan Technological Institute for Superhard and Novel Carbon Materials Troitsk Moscow 142190 Russia Moscow Institute of Physics and Technology Dolgoprudny Moscow 141700 Russia Siberian Federal University 79 Svobodniy pr. Krasnoyarsk 660041 Russia Ouantum Beam Science Directorate Japan Atomic Energy Agency Tokai Ibaraki 319-1195 Japan National University of Science and Technology MISiS Moscow 119049 Russia

Direct growth of graphene on insulators is expected to yield significant improvements in performance of graphene-based electronic and spintronic devices. In this study, we successfully reveal the atomic arrangement and electronic properties of a coherent heterostructure of single-layer graphene and α-Al2O3（0001）. The analysis of the atomic arrangement of single-layer graphene on α-Al2O3（0001） revealed an apparentcontradiction. The in-plane analysis shows that single-layer graphene grows not in a single-crystalline epitaxial manner, but rather in polycrystalline form, with two strongly pronounced preferred orientations. This suggests relatively weak interfacial interactions are operative. However, we demonstrate that unusually strong physical interactions between graphene and α-Al2O3（0001） exist, as evidenced by the small separation between the graphene and the α-Al2O3（0001） surface. The interfacial interaction is shown to be dominated by the electrostatic forces involved in the graphene n-system and the unsaturated electrons of the topmost O layer of α-Al2O3（0001）, rather than the van der Waals interactions. Such features causes graphene hole doping and enable the graphene to slide on the α-Al2O3（0001） surface with only a small energy barrier despite the strong interfacial interactions.

关键词： graphene sapphire chemical vapor deposition graphene/insulator interface

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Hexagonal Nano-Crystalline BCN Films Grown on Si (100) Substrate Studied by X-Ray Absorption Spectroscopy

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Materials Sciences and Applications 2013年第5期4卷 11-19页

作者： Md. Abdul Mannan Yuji Baba norie hirao Tetsuya Kida Masamitsu Nagano Hideyuki Noguchi Department of Chemistry and Applied Chemistry Faculty of Science and Engineering Saga University Saga Japan Department of Chemistry and Applied Chemistry Faculty of Science and Engineering Saga University Saga Japan Synchrotron Radiation Research Unit Quantum Beam Science Directorate Japan Atomic Energy Agency Ibaraki Japan Synchrotron Radiation Research Unit Quantum Beam Science Directorate Japan Atomic Energy Agency Ibaraki Japan

Hexagonal nano-crystalline boron carbonitride (h-BCN) films grown on Si (100) substrate have been precisely investigated. The films were synthesized by radio frequency plasma enhanced chemical vapor deposition using tris-dimethylamino borane as a single-source molecular precursor. The deposition was performed by setting RF power at 400 - 800 W. The reaction pressure was at 2.6 Pa and the substrate temperature was recorded at 700°C - 800°C. Formation of the nano-crystalline h-BCN compound has been confirmed by X-ray diffraction analysis. The diffraction peaks at 26.3° together with a small unknown peak at 29.2° were elucidated due to the formation of an h-BCN structure. The films composed of B, C, and N atoms with different B-N, B-C, C-N chemical bonds in forming the sp2-BCN atomic configuration studied by X-ray photoelectron spectroscopy. Orientation and local structures of the h-BCN hybrid were studied by near-edge X-ray absorption fine structure (NEXAFS) measurements. The dominant presence of p* and s* resonance peaks of the sp2-hybrid orbitals in the B K-edge NEXAFS spectra revealed the formation of the sp2-BCN configuration around B atoms like-BN3 in h-BN. The orientation was suggested on the basis of the polarization dependence of B K-edge and N K-edge of the NEXAFS spectra.

关键词： Nano-Crystalline h-BCN Films Synchrotron Radiation XPS NEXAFS Orientation

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