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Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires

Nano Research 2022年第4期15卷 3695-3703页

作者： Zahra Azimi Aswani Gopakumar Amira SAmeruddin Li Li Thien Truong hieu tnguyen Hark Hoe Tan Chennupati Jagadish Jennifer Wong-Leung Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia Faculty of Applied Science and Technology Universiti Tun Hussein Onn MalaysiaBatu Pahat 86400Malaysia Australian National Fabrication Facility ACT Node Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia School of Engineering The Australian National UniversityCanberra ACT 2601Australia Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia

Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral *** progress,the role of pattern geometry and growth parameters on the composition,microstructure,and optical properties of InGaAs nanowires is still ***,we present an optimised growth parameter window to achieve highly uniform In1-xGaxAs nanowire arrays on GaAs(111)B substrate over an extensive range of Ga concentrations,from 0.1 to 0.91,by selective-area metal-organic vapor-phase *** observe that the Ga content always increases with decreasing In/(Ga+In)precursor ratio and group V flow rate and increasing growth *** increase in Ga content is supported by a blue shift in the photoluminescence peak *** geometry of the nanowire arrays also plays an important role in the resulting ***,increasing the nanowire pitch size from 0.6 to 2μm in a patterned array shifts the photoluminescence peak emission by up to 120 *** of these growth and geometry parameters,the Ga content determines the crystal structure,resulting in a predominantly wurtzite structure for xGa≤0.3 and a predominantly zinc blende phase for xGa≥*** insights on the factors controlling the composition of InGaAs nanowires grown by a scalable catalyst-free approach provide directions for engineering nanowires as functional components of future optoelectronic devices.

关键词： InGaAs nanowires ternary semiconductors selective-area metal-organic vapor-phase epitaxy nanostructure pattern geometry

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