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检索条件"作者=han qiaoming 1 and he bingsheng 2.1. institute of applied mathematics, chinese academy of sciences,{2., China"
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A predict-correct projection method for monotone variant variational inequalities
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chinese Science Bulletin 1998年 第15期43卷 1264-1267页
作者： han qiaoming 1 and he bingsheng 2.1. institute of applied mathematics, chinese academy of sciences, Beijing 100080,{2. 2. Department of mathematics, Nanjing University, Nanjing 2.0093,{2. institute of applied {2. Chinese Academy of Sciences Beijing China Department of mathematics Nanjing University Nanjing China
A predict_correct projection method is presented for solving monotone variant variational inequalities, which could exploit the advantages and overcome the difficulties of both explicit and implicit projection methods.
来源： 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
4-2.H-ion Irradiation-induced Annealing in he-ion Implanted 4H-SiC
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IMP & HIRFL Annual Report 2016年 第1期 108-110页
作者： han Yi Li bingsheng Wang Zhiguang institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of chinese academy of sciences Beijing 100049China
Silicon carbide and silicon carbide matrix composites are widely applied in various fields because of their excellent *** materials have a lot of advantages such as high melting point,high corrosion resistance,high he...
来源： 维普期刊数据库 维普期刊数据库 评论
4-1 Lattice Disorder Produced in GaN by he-ion Implantation
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IMP & HIRFL Annual Report 2016年 第1期 105-108页
作者： Li bingsheng han Yi Wang Zhiguang Wei Kongfang S{2.n Tielong Sun Jianrong Yao Cunfeng Gao Ning Gao Xing Pang Lilong Zhu Yabin Chang Hailong Cui Minghuan Luo Peng S{2.ng Yanbin Zhang Hongpeng Fang Xuesong Zhao Sixiang Jin Jin Huang Yuxuan Liu Chao Tai Pengfei Wang Dong {2. Wenhao Qi Ming institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of chinese academy of sciences Beijing 100049China
Because of excellent electronic and optical properties,GaN has been used in the laser diodes,microwave,ultrahigh power switches and other *** to an attractive process for selective region doping of semiconductor devic...
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