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Chinese Physics Letters 1997年第9期14卷 690-693页

作者： YIN Min LOU Li-ren fu zhu-xi Structure Research Laboratory University of Science and Technology of China and Chinese Academy of SciencesHefei 230026 Department of Physics University of Science and Technology of ChinaHefei 230026

A new method for metalorganic chemical vapor deposition(MOCVD)of GaAs on Si substrates is *** of the usual high temperature surface cleaning treatment for Si substrate,the new method uses room temperature HF vapor polishing in the preparation chamber in the MOCVD system as the first step of the *** crystal GaAs layers with mirror-like surfaces were obtained.

关键词： MOCVD polishing mirror

Ultraviolet Super-Radiation Luminescence of Sputtering ZnO Film Under Cathode-Ray Excitation at Room Temperature

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Chinese Physics Letters 1999年第2期16卷 146-148页

作者： GUO Chang-xin fu zhu-xi SHI Chao-shu Department of Physics University of Science and Technology of ChinaHefei 230026

We report the observation of the cathode-ray(CR)pumped ultraviolet(UV)super-radiation luminescence in ZnO thin film at room temperature(RT).The dependence of UV(peak at about 390nm)and green(peak at about 520nm)luminescent peaks in ZnO thin film under CR excitation on excitation electron beam current has been *** the increase of the density of excitation electron beam current,green peak relatively decreases and UV peak increases,resulting in a change of the luminescent color from green to *** green peak intensity increases sublinearly with the increase of the electron beam current density and saturates at a relatively low density of electron beam *** the intensity of 390nm UV peak increases superlinearly with the increase of the electron beam current *** is a UV super-radiation luminescence of exciton in ZnO under high density *** this paper,three-dimensional atomic force microscope images of the surface of unannealled and annealled ZnO films are given.

关键词： density. excitation luminescence

Photovoltaic Effect of ZnO/Si Heterostructure

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Chinese Physics Letters 1999年第10期16卷 753-755页

作者： fu zhu-xi LIN Bi-xia LIAO Gui-hong Structure Research Laboratory University of Science and Technology of ChinaHefei 230026 Department of Physics University of Science and Technology of ChinaHefei 230026

A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is *** current-voltage characteristics under dark or illumination were *** is indicated that the sample is likely a semiconductorjunction,and this structure generates an obvious photovoltaic *** responses of photovoltage,cathodotoluminescence and excitation spectra at room temperature were employed to study the structural properties and the mechanism generating photovoltaic effect of the *** energy level and the process of electron transition in the ZnO film have also been deduced.

关键词： effect. illumination excitation

Genetic pathogenesis of acephalic spermatozoa syndrome:past,present,and future

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Asian Journal of Andrology 2022年第3期24卷 231-237页

作者： Yu Wang Ming-Fei xiang Na Zheng Yun-xia Cao fu-xi zhu Reproductive Medicine Center Department of Obstetrics and GynecologyThe First Affiliated Hospital of Anhui Medical UniversityHefei 230022China NHC Key Laboratory of Study on Abnormal Gametes and Reproductive Tract Anhui Medical UniversityHefei 230032China Key Laboratory of Population Health Across Life Cycle Anhui Medical UniversityMinistry of Education of the People’s Republic of ChinaHefei 230032China Anhui Province Key Laboratory of Reproductive Health and Genetics Anhui Medical UniversityHefei 230022China

Acephalic spermatozoa syndrome(ASS)is one of the most severe spermatogenic failures of all infertility in *** cognition of ASS has experienced a tortuous *** the past years,with the in-depth understanding of spermatogenesis and the emergence of new genetic research technologies,the unraveling of the genetic causes of spermatogenic failure has become highly *** these advances,we established a genetic background and made significant progress in the discovery of the genetic causes of *** is important to identify pathogenic genes and mutations in ASS to determine the biological reasons for the occurrence of the disease as well as provide genetic diagnosis and treatment strategies for patients with this *** this review,we enumerate various technological developments,which have made a positive contribution to the discovery of candidate genes for ASS from the past to the ***,we summarize the known genetic etiology of this phenotype and the clinical outcomes of treatments in the ***,we propose perspectives for further study and application of genetic diagnosis and assisted reproductive treatment in the future.

关键词： acephalic spermatozoa syndrome genetic pathogenesis male infertility

Cathodoluminescence of ZnO Films

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Chinese Physics Letters 1998年第6期15卷 457-459页

作者： fu zhu-xi GUO Chang-xin LIN Bi-xia LIAO Gui-hong Department of Physics University of Science and Technology of ChinaHefei 230026

The cathodoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering is *** from the characteristic green emission band(522nm)of ZnO,an ultraviolet(392nm)band and a blue(430-460 nm)band have been *** x-ray diffraction and cathodoluminescent spectra reveal the dependences of the luminescence on the preparation conditions and crystallinity of the ZnO films.

关键词： ultraviolet preparation luminescence

Electrical Properties of ZnO/Si Heterostructure

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Chinese Physics Letters 2001年第8期18卷 1108-1110页

作者： LIU Ci-Hui CHEN Yu-Lin LIN Bi-xia zhu Jun-Jie fu zhu-xi PENG Cong YANG Zhen Structure Research Laboratory Chinese Academy of Sciences Department of Physics University of Science and Technology of ChinaHefei 230026 Special Class for the Gifted Young University of Science and Technology of ChinaHefei 230026

The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are *** I-V,I-T curves,and deep level transient spectra are *** these results,we acq... 详细信息

关键词： transient heterostructure Properties

Photoluminescent Properties of ZnO Films Deposited on Si Substrates

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Chinese Physics Letters 2001年第3期18卷 441-442页

作者： ZHANG Guo-Bin SHI Chao-Shu HAN Zheng-fu SHI Jun-Yan fu zhu-xi M.Kirm G.Zimmerer National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230026 Department of Physics University of Science and Technology of ChinaHefei 230026 ⅡInstitut für Experimental Physik der Universität Hamburg Germany

The photoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering has been studied by using a synchrotron radiation(SR)light *** excitation spectra show a strong excitation band around 195 nm related to 390 nm emission *** SR vacuum ultraviolet excitation,a new emission band peaked at 290 nm was found for the first time,besides the ultraviolet emission band(390 nm)and green band(520 nm).

关键词： excitation ultraviolet vacuum

Novel DPY19L2 variants in globozoospermic patients and the overcoming this male infertility

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Asian Journal of Andrology 2019年第2期21卷 183-189页

作者： Yong-Liang Shang fu-xi zhu Jie Yan Liang Chen Wen-Hao Tang Sai xiao Wei-Ke Mo Zhi-Guo Zhang xiao-Jin He Jie Qiao Yun-xia Cao Wei Li State Key Laboratory of Stem Cell and Reproductive Biology Institute of ZoologyChinese Academy of SciencesBeijing 100101China University of Chinese Academy of Sciences Beijing 100049China Reproductive Medicine Center Department of Obstetrics and GynecologyThe First Affiliated Hospital of Anhui Medical UniversityHefei 230022China Anhui Province Key Laboratory of Reproductive Health and Genetics Anhui Medical UniversityHefei 230022China Beijing Key Laboratory of Reproductive Endocrinology and Assisted Reproductive Technology Center for Reproductive MedicineDepartment of Obstetrics and GynecologyPeking University Third HospitalBeijing 100191China Medical Center of Reproductive and Genetics Peking University First HospitalBeijing 100034China Digital China Health Technologies Co. Ltd.Beijing 100080China Anhui Provincial Engineering Technology Research Center for Biopreservation and Artificial Organs Hefei 230022China

Globozoospermia has been reported to be a rare but severe causation of male infertility,which results from the failure of acrosome biogenesis and sperm head *** of dpy-19-like 2(DPY19L2)are highly related to globozoospermia,but related investigations have been mainly performed in patients from Western ***,we performed a screening of DPY19L2 variants in a cohort of Chinese globozoospermic patients and found that five of nine patients carried DPY19L2 deletions and the other four patients contained novel DPY19L2 point mutations,as revealed by whole-exome *** 3(P3)contained a heterozygous variant(c.2126+5G>A),P6 contained a homozygous nonsense mutation(c.1720C>T,***574*),P8 contained compound heterozygous variants(c.H82-1184delATCf ***394_Ser395deIinsPhe;c.368A>T,***23Arg),and P9 contained a heterozygous variant(c.H82-1184delATCTTI frameshift).We also reported intracytoplasmic sperm injection(ICSI)outcomes in the related patients,finding that ICSI followed by assisted oocyte activation(AOA)with calcium ionophore achieved high rates of live *** summary,the infertility of these patients results from DPY19L2 dysfunction and can be treated by ICSI together with AOA.

关键词： DPY19L2 globozoospermia male infertility point mutation whole-exome sequencing

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ZnO薄膜原子力显微镜图像的多重分形谱

物理学报 2000年第5期49卷 854-862页

作者：孙霞熊刚傅竹西吴自勤中国科学技术大学基础物理中心合肥230036 中国科学技术大学物理系合肥230036

用原子力显微镜测定了Si衬底 ,未退火和退火ZnO薄膜的表面形貌 ,为了获得AFM图像的多重分形谱 ,比较了 5种计算局域高度分布概率的方法 (相对平均高度的方差、相对平均高度的绝对偏离、以粗糙表面最低点为基准面、以一定深度为基准面和... 详细信息

用原子力显微镜测定了Si衬底 ,未退火和退火ZnO薄膜的表面形貌 ,为了获得AFM图像的多重分形谱 ,比较了 5种计算局域高度分布概率的方法 (相对平均高度的方差、相对平均高度的绝对偏离、以粗糙表面最低点为基准面、以一定深度为基准面和以薄膜平均底面为基准面 ) .发现前三种方法在小概率的子集起主要作用时不能很好地满足标度不变性 ,后两种方法则能很好地满足标度不变性 ,其范围可达三个数量级 ,并且可以对不同样品进行定量的比较 .

关键词：氧化锌薄膜原子力显微镜图像多重分形谱

Defect Engineering with Rational Dopants Modulation for High‑Temperature Energy Harvesting in Lead‑Free Piezoceramics

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Nano-Micro Letters 2025年第3期17卷 87-101页

作者： Kaibiao xi Jianzhe Guo Mupeng Zheng Mankang zhu Yudong Hou Key Laboratory of Advanced functional Materials Ministry of EducationCollege of Materials Science and EngineeringBeijing University of TechnologyBeijing 100124People’s Republic of China

High temperature piezoelectric energy harvester(HTPEH)is an important solution to replace chemical battery to achieve independent power supply of HT wireless ***,simultaneously excellent performances,including high figure of merit(FOM),insulation resistivity(ρ)and depolarization temperature(Td)are indispensable but hard to achieve in lead-free piezoceramics,especially operating at 250°C has not been reported ***,well-balanced performances are achieved in BiFeO3–BaTiO3 ceramics via innovative defect engineering with respect to delicate manganese *** to the synergistic effect of enhancing electrostrictive coefficient by polarization configuration optimization,regulating iron ion oxidation state by high valence manganese ion and stabilizing domain orientation by defect dipole,comprehensive excellent electrical performances(Td=340°C,ρ250°C>10^(7)Ωcm and FOM_(250°C)=4905×10^(–15)m^(2)N^(−1))are realized at the solid solubility limit of manganese *** HT-PEHs assembled using the rationally designed piezoceramic can allow for fast charging of commercial electrolytic capacitor at 250°C with high energy conversion efficiency(η=11.43%).These characteristics demonstrate that defect engineering tailored BF-BT can satisfy high-end HT-PEHs requirements,paving a new way in developing selfpowered wireless sensors working in HT environments.

关键词： Lead-free piezoceramic Defect engineering Dopants modulation High-temperature Piezoelectric energy harvester