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Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

Photonics Research 2020年第8期8卷 1381-1387页

作者： LUCA SULMONI frank mehnke ANNA MOGILATENKO MARTIN GUTTMANN TIM WERNICKE MICHAEL KNEISSL Institut für Festkorperphysik Technische Universitat Berlin10623 BerlinGermany Ferdinand-Braun-Institut Leibniz-Institut fur Höchstfrequenztechnik12489 BerlinGermany Institut für Physik Humboldt Universität zu Berlin12489 BerlinGermany

The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are *** n-contacts are obtained up to x=0.75 with a contact resistivity of 5.7×10^−4Ω·cm^2 whereas for higher Al mole fraction the IV characteristics are *** electron microscopy reveals a thin crystalline AlN layer formed at the metal/semiconductor interface upon thermal *** analysis confirmed an Al enrichment at the *** interfacial nitride-based layer in n-contacts on n‐Al0.9Ga0.1N is partly amorphous and heavily contaminated by *** role and resulting limitations of Al in the metal stack for n-contacts on n-AlGaN with very high Al mole fraction are ***,ultraviolet C(UVC)LEDs grown on n‐Al0.87Ga0.13N and emitting at 232 nm are fabricated with an operating voltage of 7.3 V and an emission power of 120μW at 20 mA in cw operation.

关键词： AlGaN fraction properties

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Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

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Photonics Research 2021年第6期9卷 1117-1123页

作者： frank mehnke CHRISTIAN KUHN MARTIN GUTTMANN LUCA SULMONI VERENA MONTAG JOHANNES GLAAB TIM WERNICKE MICHAEL KNEISSL Institute of Solid State Physics Technische Universität Berlin10623 BerlinGermany Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik12489 BerlinGermany Current address:School of Electrical and Computer Engineering Georgia Institute of TechnologyAtlantaGeorgia 30332USA

We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes(LEDs)emitting at 232 nm entirely grown by metalorganic vapor phase epitaxy(MOVPE).A GaN:Si interlayer was embedded into a highly Mg-and Si-doped Al_(0.87)Ga_(0.13)N tunnel junction to enable polarization field enhanced *** LEDs exhibit an on-wafer integrated emission power of 77μWat 5 mA,which correlates to an external quantum efficiency(EQE)of 0.29%with 45μWemitted through the bottom sapphire substrate and 32μW emitted through the transparent top *** depositing a highly reflective aluminum reflector,a maximum emission power of 1.73 mW was achieved at 100 mA under pulsed mode operation with a maximum EQE of 0.35%as collected through the bottom substrate.

关键词： heterojunction MOVPE AlGaN

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Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

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Photonics Research 2017年第2期5卷 44-51页

作者： CARLO DE SANTI MATTEO MENEGHINI DESIREE MONTI JOHANNES GLAAB MARTIN GUTTMANN JENS RASS SVEN EINFELDT frank mehnke JOHANNES ENSLIN TIM WERNICKE MICHAEL KNEISSL GAUDENZIO MENEGHESSO ENRICO ZANONI Department of Information Engineering University of Padova Ferdinand-Braun-Institut Leibniz-Institut fur Hochstfrequenztechnik Technische Universitat Berlin Institut für Festkorperphysik

This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based *** carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep *** the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice.

关键词： Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs Ga AlGaN EBL SRH UV

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