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Pulse Laser Deposition of hfO_(2)Nanoporous-Like Structure,Physical Properties for Device Fabrication

Journal of Renewable Materials 2022年第11期10卷 2819-2834页

作者： Shams B.Ali Sarmad Fawzi hamza Alhasan Evan T.Salim forat h.alsultany Omar S.Dahham Laser and Optoelectronic Engineering Department University of TechnologyBaghdadIraq Applied Science Department University of TechnologyBaghdadIraq Al-Mustaqbal University College Department of Medical PhysicsHillahIraq Center of Excellence Geopolymer and Green Technology Faculty of Engineering TechnologyUniversiti Malaysia PerlisPerlisMalaysia Department of Civil Engineering College of EngineeringCihan University-ErbilKurdistan RegionIraq

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(hfO_(2))*** many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano hfO2,between the metal contacts and the substrates was *** used the Pulsed Laser Deposition method to fabricate an Al/hfO_(2)/p-Si Schottky barrier diode where the nanostructured hfO2 films as an intermediate layer and varied substrate *** optical result reveals a high degree of transparency(93%).The optical bandgap of deposited hfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation *** morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on *** regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V *** diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

关键词： Pulse laser deposition nano films optoelectronics hfO_(2) optical device

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Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Journal of Renewable Materials 2023年第3期11卷 1101-1122页

作者： haneen D.Jabbar Makram A.Fakhri Mohammed Jalal Abdul Razzaq Omar S.Dahham Evan T.Salim forat h.alsultany U.hashim Laser and Optoelectronic Engineering Department University of Technology-IraqBaghdadIraq Department of Civil Engineering College of EngineeringCihan University-ErbilKurdistan RegionIraq Department of Petroleum and Gas Refinery Engineering Al-Farabi University CollageBaghdadIraq Applied Science Department University of Technology-IraqBaghdadIraq Department of Medical Physics Al-Mustaqbal University CollegeBabylonIraq Institute of Nano Electronic Engineering University Malaysia PerlisKangarPerlisMalaysia

Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were *** optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric *** substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire *** pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and *** GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)*** properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi *** topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 *** GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after *** fabricated GaN/Psi film exhibited good electrical characteristics.

关键词： Gallium nitride porous silicon photoelectrochemical etching pulsed laser deposition optical device

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Effects of CW CO<sub>2</sub>Laser Annealing on Indium Tin Oxide Thin Films Characteristics

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Soft Nanoscience Letters 2014年第4期4卷 83-89页

作者： forat h. alsultany Naser M. Ahmed M. Z. Matjafri Nano-Optoelectronics Research and Technology Laboratory School of Physics Universiti Sains Malaysia Penang Malaysia

In this work ITO thin film annealing was carried out using a CW CO2 laser beam for ITO thin film annealing over a 1 cm2 area with a temperature higher than 250°C to obtain ITO grains with excellent structural quality thin films. The obtained ITO films were characterized for crystallization, surface morphology, electrical and optical properties, which has theoretical significance and application value. ITO thin films are deposited on glass substrates by sputter coater system (RF) from a high density target (In2O3-SnO2, 90-10 wt%). After deposition, ITO thin films have been irradiated by CW CO2 laser (λ = 10.6 μm) with power ranging from 1 to 10 watt. These films were annealed at temperatures 250°C, 350°C, and 450°C in the air for 20 minutes using different laser power. The main incentive was to develop a low temperature process for ITO thin films, which typically required a 350°C anneal to crystallize and achieve optimum optical and electrical properties. The XRD results showed that 350°C temperature laser annealing could crystallize ITO with a strong (222) preferred orientation and its grain size increased from 29.27 nm to 48.63 nm. The structure, optical transmission, energy gap, resistivity and sheet resistance of the ITO thin films were systematically investigated as a function of laser post annealing temperature. It was found that the lowest resistivity was 2.9 × 10-4 Ω-cm and that sheet resistance was 14.5 Ω/sq. And the highest optical transmittance (98.65%) of ITO films was obtained at 350°C annealing temperature.

关键词： ITO Thin Film RF Sputtering Annealing CW CO2 Laser Optical Properties Structure XRD Transmission Resistivity Energy Gap

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