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β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

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Science China(Physics,Mechanics & Astronomy) 2020年第7期63卷 93-96页

作者： YiBo Wang WenHui Xu TianGui You fengwen mu HaoDong Hu Yan Liu Hao Huang Tadatomo Suga GenQuan Han Xin Ou Yue Hao The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China The State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The Collaborative Research Center Meisei UniversityHino shiTokyo 191-8506Japan

β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting ***(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 *** the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 *** on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively.

关键词： Ga203,1MOSFET thermal conductivity heterogeneous Ga2O3-Al2O3-Si

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An fengwen mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

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Science China(Information Sciences) 2023年第11期66卷 313-314页

作者： Hangning SHI Ailun YI Jiaxin DING Xudong LIU Qingcheng QIN Juemin YI Junjie HU Miao WANG Demin CAI Jianfeng WANG Ke XU fengwen mu Tadatomo SUGA René HELLER Mao WANG Shengqiang ZHOU Wenhui XU Kai HUANG Tiangui YOU Xin OU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences University of Chinese Academy of Sciences School of Materials and Chemistry University of Shanghai for Science and Technology Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou Nanowin Science and Technology Co. Ltd. SABers Co. Ltd. Collaborative Research Center Meisei University Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials Research College of Physics and Electronic Engineering Sichuan Normal University

Ion-cutting technology is an ingenious solution to the highquality heterogeneous integration of Ga N thin films with CMOS-compatible Si(100) substrate, which provides a platform to combine Ga N-based optoelectronics, high-frequency and high-power electronics with digital signal processing,logic computation, and control of Si(100) CMOS [1].

关键词： Gallium nitride

Neuropeptide cholecystokinin:a key neuromodulator for hippocampal functions

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Neural Regeneration Research 2025年第7期20卷 1991-1992页

作者： fengwen Huang Stephen Temitayo Bello Department of Neuroscience City University of Hong KongKowloon TongHong Kong Special Administrative RegionChina Center for Regenerative Medicine and Health Hong Kong Institute of Science&InnovationChinese Academy of SciencesHong Kong Special Administrative RegionChina

Spatial memory is crucial for survival within external surroundings and wild *** hippocampus,a critical hub for spatial learning and memory formation,has received extensive investigations on how neuromodulators shape its functions(Teixeira et al.,2018;Zhang et al.,2024).However,the landscape of neuromodulations in the hippocampal system remains poorly understood because most studies focus on classical monoamine neuromodulators,such as acetylcholine,serotonin,dopamine,and *** neuropeptides,comprising the most abundant neuromodulators in the central nervous system,play a pivotal role in neural information processing in the hippocampal ***(CCK),one of the most abundant neuropeptides,has been implicated in regulating various physiological and neurobiological statuses(Chen et al.,2019).CCK-A receptor(CCK-AR)and CCK-B receptors(CCK-BR)are two key receptors mediating the biological functions of CCK,both of which belong to class-A sevenfold transmembrane G protein-coupled receptors(Nishimura et al.,2015).CCK-AR preferentially reacts to sulfated CCK,whereas CCK-BR binds both CCK and gastrin with similar affinities(Ding et al.,2022).The expression patterns of CCK-AR and CCK-BR are distinct,implying that CCK has various functions in target *** instance,CCK-AR is widely expressed in the GI and brain subregions and is hence implicated in the control of digestive function and satiety ***,CCK-BR is abundantly and widely distributed in the central nervous system,which majorly regulates anxiety,learning,and memory(Ding et al.,2022).However,the roles of endogenous CCK and CCK receptors in regulating hippocampal function at electrophysiological and behavioral levels have received less attention.

关键词： abundant functions modulator

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表面活化室温键合技术研究进展

机械工程学报 2022年第2期58卷 136-146页

作者：张洪泽田野孟莹母凤文王鑫华刘新宇中国科学院微电子研究所高频高压器件与集成研发中心北京100029

随着半导体技术领域对低温晶圆键合技术的需求不断增长,表面活化键合(Surface activated bonding,SAB)技术开始被广泛研究。与其他键合方式相比,即使在室温下,表面活化键合也能完成牢固的键合,对于常规半导体、金属材料等非常有效。但对... 详细信息

随着半导体技术领域对低温晶圆键合技术的需求不断增长,表面活化键合(Surface activated bonding,SAB)技术开始被广泛研究。与其他键合方式相比,即使在室温下,表面活化键合也能完成牢固的键合,对于常规半导体、金属材料等非常有效。但对于SiO_(2)、有机物等材料,标准的表面活化键合并不十分适用,限制了其在特定领域的应用。近年来,研究者们提出两种改进型表面活化室温键合技术,通过在表面活化时或活化后向材料表面沉积一层纳米中间层,将晶圆的直接键合转化为纳米中间层间的键合。在键合机理方面,重点分析了材料的表面活化机制、界面原子成键机制以及环境因素对键合强度的影响等。通过对前期研究的分析总结进一步对比了三种表面活化键合技术的优缺点,期望可以推动表面活化键合技术在半导体技术领域的进一步广泛应用。

关键词：晶圆键合键合界面表面活化键合室温

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基于云边协同技术的远程安全运维系统

信息安全与通信保密 2024年第4期 93-104页

作者：许勇文占婷付猛林母凤雯中电科网络安全科技股份有限公司四川成都610095

在数字化时代,软件应用的快速交付和高效部署对于企业的成功至关重要,传统的应用部署方式往往复杂且耗时,容易导致运维困难和资源浪费,企业面对软件功能需求的不断变化,需要快速响应产品的变化,快速部署软件以产生效益。随着容器化技术... 详细信息

在数字化时代,软件应用的快速交付和高效部署对于企业的成功至关重要,传统的应用部署方式往往复杂且耗时,容易导致运维困难和资源浪费,企业面对软件功能需求的不断变化,需要快速响应产品的变化,快速部署软件以产生效益。随着容器化技术、微服务等云原生技术的发展,为服务的频繁发布、快速交付及风险反馈等提供了技术保障。本系统基于云边协同场景,利用云原生、云边协同和安全数据通道技术,实现了基于本地云、远端服务为一体的云边协同的远程安全运维系统。

关键词：容器化云原生云边协同数据通道安全运维

Affine Structures on a Ringed Space and Schemes

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Chinese Annals of Mathematics,Series B 2011年第1期32卷 139-160页

作者： fengwen AN School of Mathematics arid Statistics Wuhan University Wuhan 430072 China

The author first introduces the notion of affine structures on a ringed space and then obtains several related *** structures on a ringed space,arising from complex analytical spaces of algebraic schemes,behave like differential structures on a smooth *** one does for differential manifolds,pseudogroups of affine transformations are used to define affine atlases on a ringed *** atlas on a space is said to be an affine structure if it is *** affine structure is said to be admissible if there is a sheaf on the underlying space such that they are coincide on all affine charts,which are in deed affine open sets of a *** a rigour manner,a scheme is defined to be a ringed space with a specified affine structure if the affine structures make a contribution to the cases such as analytical spaces of algebraic ***,by the whole of affine structures on a space,two necessary and sufficient conditions,that two spaces are homeomorphic and that two schemes are isomorphic,coming from the main theorems of the paper,are obtained respectively.A conclusion is drawn that the whole of affine structures on a space and a scheme,as local data,encode and reflect the global properties of the space and the scheme,respectively.

关键词： Affine structure Pseudogroup of affine transformations Ringed space Scheme

Folic Acid Functionalized PFBT Fluorescent Polymer Dots for Tumor Imaging

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Chinese Journal of Chemistry 2016年第6期34卷 570-575页

作者： fengwen Cao Liqin Xiong Nano Biomedical Research Center School of Biomedical Engineering Med-X Research Institute Shanghai Jiao Tong University 1954 Hua-Shan Road Shanghai 200030 China

Folic acid functionalized PFBT-COOH and PFBT-NH2 polymer dots were prepared using a nano precipitation method, and their applications for tumor imaging in vitro and in vivo were demonstrated for the first time. The syn- thesized FA-PFBT-COOH polymer dots were 50--60 nm in diameter with a zeta potential of greater than -30 mV in water, while the synthesized FA-PFBT-NH2 polymer dots were 90-- 105 nm in diameter with a zeta potential of greater than -20 mV in water. Furthermore, the FA-PFBT-COOH polymer dots produced stronger fluorescence in- tensity in water solution as well as in the cells than the FA-PFBT-NH2 polymer dots, and were able to image H1299 tumors in living mice after intravenous injection. This study showed the great potentials of FA-PFBT-COOH poly- mer dots as fluorescent nanoprobes for biomedical imaging.

关键词： folic acid fluorescent polymer dots cell imaging

Environmental and technological effects on ancient social evolution at different spatial scales

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Science China Earth Sciences 2017年第12期60卷 2067-2077页

作者： DONG GuangHui LIU fengwen CHEN FaHu MOE Key Laboratory of Western China's Environmental Systems(Ministry of Education) Lanzhou UniversityLanzhou 730000China

The rise and fall of ancient cultures and civilizations is a hotly debated topic that has generated disagreements and disputes. In this paper we summarize some case studies on the abandonment of ancient sites, the prosperity and collapse of ancient cultures, and demographic changes, as well as the influence of environment and technology during the prehistoric and historic periods. We then suggest that the dominant influencing factors for the evolution of ancient societies vary by spatial *** the local scale, sudden disasters are critical factors leading to the destruction and abandonment of large settlements. On a regional scale, climatic variations(e.g., droughts or cold events lasting for decades or centuries) are important factors that induce the collapse of ancient civilizations and mass migrations, while an enduring and stable optimal climate facilitated the prosperity of ancient civilizations. On a global scale, major technological innovations and their dispersion lasting for centuries and even millennia are major catalysts for population growth and social development. Lastly, we illustrate a possible mechanism under which environmental and technological factors played a critical role in ancient human survival and social evolution on different spatial scales.

关键词： Prehistoric period Historic period Man-land relationship Cultural evolution Sudden disaster Climatic variation Technological innovation