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Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode

Journal of Semiconductors 2020年第6期41卷 29-34页

作者： A.Menani L.Dehimi S.Dehimi f.pezzimenti Laboratory of Metallic and Semiconducting Materials(LMSM) Department of Electrical EngineeringBiskra UniversityBiskraAlgeria faculty of Science Elhadj Lakhdar UniversityBatnalAlgeria Research Centre in Industrial Technology(CRTI) AlgiersAlgeria DIIES–Mediterranea University of Reggio Calabria Reggio CalabriaItaly

The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of a careful modelling analysis in a wide range of *** device’s optical gain is calculated by using two different band energy *** first is based on the simple band-to-band model that accounts for carrier transitions between the first levels of the conduction band and valence band,whereas the second assumes the perturbation theory(k.p model)for considering the valence intersubband transitions and the relative absorption losses in the *** results reveal that the optical gain increases with increasing the n-type doping density as well as the Al molar fraction of the AlxGa1–xN layers,which originate the GaN compressivestrained *** particular,a significant optical gain on the order of 5000 cm^-1 is calculated for a QW width of 40A at room *** addition,the laser threshold current density is of few tens of A/cm^2 at low temperatures.

关键词： laser diode quantum well optical gain threshold current temperature

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Simulation analysis of a high efficiency GaInP/Si multijunction solar cell

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Journal of Semiconductors 2020年第3期41卷 54-58页

作者： M.Benaicha L.Dehimi f.pezzimenti f.Bouzid Laboratory of Metallic and Semiconductor Materials University of BiskraBiskra 07000Algeria faculty of Science University of BatnaBatna 05000Algeria DIIES-Mediterranea University of Reggio Calabria Reggio Calabria 89122Italy UDCMA-Research Center in Industrial Technologies Algiers 16014Algeria

The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic *** particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,***(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been *** J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic *** analysis of the tunnel-junction behaviour has been also *** mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral *** quantum efficiency simulations have evaluated the useful wavelength *** results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction.

关键词： GaInP/Si tandem solar cells power efficiency numerical simulations

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