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Transverse magnetoresistance peculiarities of thermoelectric Lu-doped Bi_2Te_3 compound due to strong electrical disorder

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Journal of Rare Earths 2019年第3期37卷 292-298页

作者： Oleg Ivanov Maxim Yaprintsev elena danshina Belgorod State University Belgorod State Technological University named after V.G.Shukhov

The n-type thermoelectric Bi_(1.9)Lu_(0.1)Te_3 was prepared by microwave-solvothermal method and spark plasma sintering. The magnetic field and temperature dependences of transverse magneto resistance measured within temperature 2-200 K interval allow finding the peculiarities characteristic for strongly disordered and inhomogeneous semiconductors. The first peculiarity is due to appearance of linear-inmagnetic field contribution to the total magneto resistance reflected in a crossover from quadratic magnetoresistance at low magnetic fields to linear magneto resistance at high magnetic fields. The linear magnetoresistance can result from the Hall resistance picked up from macroscopically distorted current paths due to local variations in stoichiometry of the compound studied. The second peculiarity is that both linear magnetoresistance magnitude and crossover field are functions of carrier mobility which is in agreement with the Parish and Littlewood model developed for disordered and inhomogeneous semiconductors. An increase in the mobility due to a decrease in temperature is accompanied by an increase in the magnetoresistance magnitude and a decrease in the crossover field. Finally, the third peculiarity is related to the remarkable deviation of the total magnetoresistance measured at various temperatures from the Kohler's rule. Presence of strong inhomogeneity and disorder in the Bi_(1.9)Lu_(0.1)Te_3 structure concluded from the magnetoresistance peculiarities can be responsible for the remarkable reduction in the total thermal conductivity of this compound.

关键词： Bismuth telluride Linear positive magnetoresistance Semiconductors Thermoelectric material Carrier mobility Kohler’s rule

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