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Associated mortality risk of atypical antipsychotic medication in individuals with dementia

World Journal of Psychiatry 2022年第2期12卷 298-307页

作者： Peter Phiri Tomas Engelthaler Hannah Carr Gayathri Delanerolle clive holmes Shanaya Rathod Research&Innovation Department Southern Health NHS Foundation TrustSouthampton SO303JBUnited Kingdom Primary Care Population Sciences and Medical EducationFaculty of MedicineUniversity of SouthamptonSouthampton SO165STUnited Kingdom Oxford Centre for Innovation Akrivia HealthOxford OX1 BYUnited Kingdom Department of Psychology University of SouthamptonSouthampton SO165STUnited Kingdom Nuffield Department of Primary Care Health Sciences University of OxfordOxford OX26GGUnited Kingdom Clinical and Experimental Sciences University of SouthamptonSouthampton SO165STUnited Kingdom Research&Innovation Department Memory Assessment&Research CentreSouthern Health NHS Foundation TrustSouthampton SO303JBUnited Kingdom

BACKGROUND Antipsychotic medications such as risperidone,olanzapine and aripiprazole are used to treat psychological and behavioural symptoms among dementia *** evidence indicate prescription rates for antipsychotics vary and wider consensus to evaluate clinical epidemiological outcomes is *** To investigate the potential impact of atypical antipsychotics on the mortality of patients with *** A retrospective clinical cohort study was developed to review United Kingdom Clinical Record Interactive Search system based data between January 1,2013 to December 31,2017.A descriptive statistical method was used to analyse the *** Mental State Examination(MMSE)scores were used to assess the severity and stage of disease progression.A cox proportional hazards model was developed to evaluate the relationship between survival following diagnosis and other *** A total of 1692 patients were identified using natural language processing of which,587 were prescribed olanzapine,quetiapine or risperidone(common group)whilst 893(control group)were not prescribed any *** prescribed olanzapine showed an increased risk of death[hazard ratio(HR)=1.32;95%confidence interval(CI):1.08-1.60;P<0.01],as did those with risperidone(HR=1.35;95%CI:1.18-1.54;P<0.001).Patients prescribed quetiapine showed no significant association(HR=1.09;95%CI:0.90-1.34;P=0.38).Factors associated with a lower risk of death were:High MMSE score at diagnosis(HR=0.72;95%CI:0.62-0.83;P<0.001),identifying as female(HR=0.73;95%CI:0.64-0.82;P<0.001),and being of a White-British ethnic group(HR=0.82;95%CI:0.72-0.94;P<0.01).CONCLUSION A significant mortality risk was identified among those prescribed olanzapine and risperidone which contradicts previous findings although the study designs used were *** research should be conducted to better assess clinical epidemiological outcomes associated with diagnosis and therapies to improve c

关键词： Dementia Antipsychotics Mortality Vascular Alzheimer’s disease Frontotemporal dementia Lewy bodies Parkinson’s and mixed

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Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

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Nano Research 2016年第10期9卷 3116-3128页

作者： Tandra Ghoshal Matthew T. Shaw Justin D. holmes Michael A. Morris Department of Chemistry and Tyndall National Institute University College Cork Cork Ireland AMBER Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) Trinity College Dublin Dublin Ireland Intel Ireland Ltd. Collinstown Industrial Estate Co. Kildare Ireland School of Chemistry Trinity College Dublin Dublin Ireland

Our goal is to develop a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks. These materials should have high etch contrast （compared to silicon） and so allow high-aspect-ratio, high- fidelity pattern transfer whilst being readily integrable in modem semiconductor fabrication （FAB friendly）. Here, we show that ultra-small-dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks （Ni, NiO, and ZnO） of different morphologies and dimensions were formed using microphase- separated polystyrene-b-poly（ethylene oxide）（PS-b-PEO） block copolymer （BCP） thin films by varying the BCP molecular weight, annealing temperature, and annealing solvent（s）. The self-assembled polymer patterns were solvent-processed, and metal ions were included into chosen domains via a selective inclusion method. Inorganic oxide nanopatterns were subsequently developed using standard techniques. High-resolution transmission electron microscopy studies show that high-aspect-ratio pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profiles of the Si nanowire arrays. Notably good performance of the metal mask was seen, and this could impact the use of these materials at small dimensions where conventional methods are severely limited.

关键词： block copolymer self-assembly hard mask silicon nanowires

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