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Memristive switching in the surface of a charge-density-wave topological semimetal

Science Bulletin 2024年第13期69卷 2042-2049页

作者： Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang Wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan Wang Haoqi Wu Jiaming Gu Jiayu Wang Yuhan Du chunsen Liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou chun-gang duan Changsong Xu Xiang Yuan Cheng Zhang State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Key Laboratory of Computational Physical Sciences(Ministry of Education) Institute of Computational Physical SciencesState Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200030China School of Physics Southeast UniversityNanjing 211189China Key Laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China Shanghai Center of Brain–inspired Intelligent Materials and Devices East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum *** ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic ***,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free *** this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))*** find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface *** the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal *** employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention *** origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band *** emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关键词： Topological semimetal Schottky barrier Surface ferroelectricity Memristor

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Recent advances, perspectives, and challenges inferroelectric synapses

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Chinese Physics B 2020年第9期29卷 15-30页

作者： Bo-Bo Tian Ni Zhong chun-gang duan Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal UniversityShanghai 200241China Collaborative Innovation Center of Extreme Optics Shanxi UniversityShanxi 030006China

The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is that the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides, contributes reliable performance in these ferroelectric synapses. Another tremendous advantage is the extremely low energy consumption because the ferroelectric polarization is manipulated by electric field which eliminates the Joule heating by current as in magnetic and phase change memories. Ferroelectric synapses have potential for the construction of low-energy and effective brain-like intelligent networks. Here we summarize recent pioneering work of ferroelectric synapses involving the structure of ferroelectric tunnel junctions (FTJs), ferroelectric diodes (FDs), and ferroelectric field effect transistors (FeFETs), respectively, and shed light on future work needed to accelerate their application for efficient neural network.

关键词： ferroelectric synapse ferroelectric tunnel junctions ferroelectric field effect transistors

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Ferroelectric Controlled Spin Texture in Two-Dimensional NbOI_(2)Monolayer

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Chinese Physics Letters 2021年第8期38卷 126-130页

作者： Qian Ye Yu-Hao Shen chun-gang duan State Key Laboratory of Precision Spectroscopy and Key Laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

The persistent spin helix(PSH)system is considered to have promising applications in energy-conservation spintronics because it supports an extraordinarily long spin lifetime of ***,we predict that the existence of PSH state in two-dimensional(2 D)ferroelectric NbOI_(2)*** first-principles calculation results show that there exists Dresselhaus-type spin-orbit coupling(SOC)band splitting near the conduction-band minimum(CBM)of the NbOI_(2)*** is revealed that the spin splitting near CBM merely refers to out-of-plane spin configuration in the wave vector space,which gives rise to a long-lived PSH state that can be controlled by reversible ferroelectric *** believe that the coupling characteristics of ferroelectric polarization and spin texture in NbOI_(2)provide a platform for the realization of fully electric controlled spintronic devices.

关键词： ferroelectric splitting realization

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Observing ferroelastic switching in Hf_(0.5)Zr_(0.5)O_(2) thin film

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Chinese Physics B 2024年第6期33卷 526-530页

作者：关赵王陶郑赟喆彭悦魏鹿奇张宇科阿卜力孜·麦提图尔荪黄家豪童文旖韩根全陈斌斌向平华段纯刚钟妮 Key Laboratory of Polar Materials and Devices Ministry of EducationShanghai Center of Brain-inspired Intelligent Materials and DevicesEast China Normal UniversityShanghai 200241China School of Microelectronics Xidian UniversityXi'an 710071China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

Hafnium zirconium oxides(HZO),which exhibit ferroelectric properties,are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor(CMOS) *** addition to piezoelectricity,ferroelectricity,and flexoelectricity,this study reports the observation of ferroelasticity using piezoelectric force microscopy(PFM) and scanning transmission electron microscopy(STEM).The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric *** of the retentive domains is observed through repeated wake-up *** study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

关键词： HfO_(2)-based ferroelectrics ferroelasticity piezoelectric force microscopy(PFM)

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Understanding and designing magnetoelectric heterostructures guided by computation:progresses,remaining questions,and perspectives

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npj Computational Materials 2017年第1期3卷 304-324页

作者： Jia-Mian Hu chun-gang duan Ce-Wen Nan Long-Qing Chen Department of Materials Science and Engineering Pennsylvania State UniversityUniversity ParkPA 16802USA Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal UniversityShanghaiChina School of Materials Science and Engineering and State Key Lab of New Ceramics and Fine ProcessingTsinghua UniversityBeijing 100084China

Magnetoelectric composites and heterostructures integrate magnetic and dielectric materials to produce new functionalities,e.g.,magnetoelectric responses that are absent in each of the constituent materials but emerge through the coupling between magnetic order in the magnetic material and electric order in the dielectric *** magnetoelectric coupling in these composites and heterostructures is typically achieved through the exchange of magnetic,electric,or/and elastic energy across the interfaces between the different constituent materials,and the coupling effect is measured by the degree of conversion between magnetic and electric energy in the absence of an electric *** strength of magnetoelectric coupling can be tailored by choosing suited materials for each constituent and by geometrical and microstructural *** this article,we discuss recent progresses on the understanding of magnetoelectric coupling mechanisms and the design of magnetoelectric heterostructures guided by theory and *** outline a number of unsolved issues concerning magnetoelectric *** compile a relatively comprehensive experimental dataset on the magnetoelecric coupling coefficients in both bulk and thin-film magnetoelectric composites and offer a perspective on the data-driven computational design of magnetoelectric composites at the mesoscale microstructure level.

关键词： composites material coupling

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Interface/surface magnetoelectric effects： New routes to the electric field control of magnetism

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Frontiers of physics 2012年第4期7卷 375-379页

作者：段纯刚 Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal UniversityShanghai 200062China National Laboratory for Infrared Physics Chinese Academy of SciencesShanghai 200083China

In this perspective paper, we discuss possible ways to control magnetism using electric-field. Special focus is given to interface/surface magnetoelectric effects, which will become important when the thickness of magnetic films drops to nanoscale. We show that significantly different mechanisms may lead to interface/surface magnetoelectric effects, providing great flexibility to apply such effects. As a result, we propose several protype devices utilizing these novel magnetoelectric effects, and strongly advocate experimental endeavors to realize such devices.

关键词： magnetoelectric effect multiferroic electric-field controlled magnetism

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Concepts of the half-valley-metal and quantum anomalous valley Hall effect

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npj Computational Materials 2020年第1期6卷 588-594页

作者： He Hu Wen-Yi Tong Yu-Hao Shen Xiangang Wan chun-gang duan State Key Laboratory of Precision Spectroscopy and Key Laboratory of Polar Materials and Devices Ministry of EducationDepartment of ElectronicsEast China Normal University200241 ShanghaiChina Department of Physics and National Laboratory of Solid State Microstructures Nanjing University210093 NanjingChina Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006 ShanxiChina

Valley,the energy extrema in the electronic band structure at momentum space,is regarded as a new degree of freedom of electrons,in addition to charge and *** studies focused on valley degree of freedom now form an emerging field of condensed-matter physics,i.e.,valleytronics,whose development is exactly following that of spintronics,which focuses on the spin degree of freedom.

关键词： quantum momentum exactly

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Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted Bilayer

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Chinese Physics Letters 2021年第3期38卷 101-106页

作者： Yu-Hao Shen Wen-Yi Tong He Hu Jun-Ding Zheng chun-gang duan State Key Laboratory of Precision Spectroscopy and Key Laboratory of Polar Materials and Devices of Ministry of Education Department of ElectronicsEast China Normal UniversityShanghai 200241China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30° twisted bilayer honeycomb lattice system, which possesses an incommensurate moiré pattern,and uncommon electronic behaviors may appear due to the absence of phase coherence. Such a system is extremely sensitive to further twist and many intriguing phenomena will occur. Based on first-principles calculations we show that, for further twist near 30°, there could induce dramatically different dielectric behaviors of electron between left and right-twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such an exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist,which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right-twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e., the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moiré systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices.

关键词： twist twisted dielectric

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Bird specimen number linked with species trait and climate niche breadth

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Avian Research 2024年第1期15卷 108-115页

作者： Xiaoyu duan Xiongwei Huang Jingya Zhang Shuo Lv gang Song Yanping Wang gang Feng Ministry of Education Key Laboratory of Ecology and Resource Use of the Mongolian Plateau&Inner Mongolia Key Laboratory of Grassland Ecology School of Ecology and EnvironmentInner Mongolia UniversityHohhot010020China Key Laboratory of Marine Biotechnology of Fujian Province Institute of OceanologyCollege of Marine SciencesFujian Agriculture and Forestry UniversityFuzhou350002China Key Laboratory of Zoological Systematics and Evolution Institute of ZoologyChinese Academy of SciencesBeijing100101China Laboratory of Island Biogeography and Conservation Biology College of Life SciencesNanjing Normal UniversityNanjing210023China

Biological specimens are fundamental for taxonomy and flora/fauna *** importantly,they also play crucial roles in recording environmental impacts on morphology and behavior,which is vital for biodiversity research and ***,there are few systematic studies on the patterns and drivers of bird specimen number at regional *** study is the first attempt to examine the relationships between bird specimen number and species traits as well as climate niche breadth in China,aiming to answer two questions:1)how do species’temperature niche breadth and precipitation niche breadth influence specimen number?2)which trait is most associated with bird specimen number?The associations between bird specimen number and explanatory variables were examined using ordinary least squares,generalized linear models,phylogenetic generalized linear mixed models,and multiple *** results showed that Muscicapidae was the family with the highest specimen number,and Passeriformes was the order with the highest specimen *** specimen number significantly increased with larger temperature niche breadth and precipitation niche *** number was also positively associated with geographic range size,habitat specificity,hunting vulnerability and clutch size,but negatively associated with body *** findings suggest that future bird specimen collection should pay more attention to birds with limited ecological niches,large body sizes,and small clutch *** research enhances the use of bird specimen data to study and preserve biodiversity.

关键词： Biodiversity conservation Biological specimens Bird traits Scientific collection Specimen number Temperature and precipitation

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FERROELECTRIC SWITCHING PATH IN MONODOMAIN RHOMBOHEDRAL BiFeO_(3)CRYSTAL:A FIRST-PRINCIPLES STUDY

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Journal of Advanced Dielectrics 2011年第2期1卷 179-184页

作者： HANG-CHEN DING SI-QI SHI WEI-HUA TANG chun-gang duan Key Laboratory of Polar Materials and Devices Ministry of Education East China Normal University Shanghai 200062P.R.China Department of Physics Center for Optoelectronics Materials and Devices Zhejiang Sci-Tech University Hangzhou 310018 P.R.China National Laboratory for Infrared Physics Chinese Academy of Sciences Shanghai 200083 P.R.China

Based on density-functional calculations,we have studied possible ferroelectric switching path in monodomain single crystal of rhombohedral BiFeO_(3),a prototypical multiferroic *** carefully studying the behaviors of FeO_(3)corner-sharing double-tetrahedrons,we find abrupt changes in total energy and oxygen atomic positions,and therefore polarizations,occur in the ferroelectric switching path of rhombohedral BiFeO_(3).Detailed analyses suggest that such behavior might be caused by the frustrated magnetic ordering in the paraelectric phase of rhombohedral BiFeO_(3),where three O atoms and the Bi atom are in the same plane perpendicular to the polar-ization *** is supported by the fact that the ferroelectric switching for paramagnetic BiFeO_(3)is smooth and has a much lower energy barrier than that of an tiferromagnetic BiFeO_(3).

关键词： Multiferroic ferroelectricity BiFeO_(3) first-principles calculation

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