检索结果-南通市图书馆

Progress on the antiferromagnetic.topologic.l insulator MnBi2Te4

National Sc.enc. Review 2024年第2期11卷 33-49页

作者： Shuai Li Tianyu liu c.ang liu Yayu Wang Hai-Zhou Lu x.c.x.e Department of Physic. Harbin Institute of Technology Shenzhen Institute for Quantum Sc.enc. and Engineering and Department of Physic. Southern University of Science and Technology(SUSTech) Quantum Sc.enc. c.nter of Guangdong-Hong Kong-Mac.o Greater Bay Area(Guangdong) Shenzhen Key Laboratory of Quantum Sc.enc. and Engineering International Quantum Ac.demy Beijing Ac.demy of Quantum Information Sc.enc.s Beijing Key Laboratory of Optoelec.ronic.Func.ional Materials&Mic.o-Nano Devic.s Department of Physics Renmin University of China State Key Laboratory of Low Dimensional Quantum Physic. Department of PhysicsTsinghua University Frontier Sc.enc. c.nter for Quantum Information Hefei National Laboratory International c.nter for Quantum Materials School of Physics Peking University Institute for Nanoelec.ronic.Devic.s and Quantum c.mputing Fudan University

Topologic.l materials, whic. feature robust surfac. and/or edge states, have now been a researc. foc.s in c.ndensed maTher physic.. They represent a new c.ass of materials ex.ibiting nontrivial topologic.l phases,and provide a platform for ex.loring ex.tic.transport phenomena, suc. as the quantum anomalous Hall effec. and the quantum spin Hall effec.. Rec.ntly, magnetic.topologic.l materials have attrac.ed c.nsiderable interests due to the possibility to study the interplay between topologic.l and magnetic.*** partic.lar, the quantum anomalous Hall and ax.on insulator phases c.n be realized in topologic.l insulators with magnetic.order. MnBi2Te4, as the first intrinsic.antiferromagnetic.topologic.l insulator disc.vered, allows the ex.mination of ex.sting theoretic.l predic.ions; it has been ex.ensively studied, and many new disc.veries have been made. Here we review the progress made on MnBi2Te4from both ex.erimental and theoretic.l aspec.s. The bulk c.ystal and magnetic.struc.ures are surveyed first, followed by a review of theoretic.l c.lc.lations and ex.erimental probes on the band struc.ure and surfac. states, and a disc.ssion of various ex.tic.phases that c.n be realized in MnBi2Te4. The properties of MnBi2Te4thin films and the c.rresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future researc. direc.ions in this field are also disc.ssed.

关键词： MnBi2Te4 magnetic.topologic.l insulator antiferromagnetic quantum anomalous Hall effec. ax.on insulator

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Measurement of the integrated Luminosities of c.oss-sec.ion sc.n data samples around theψ(3770)mass region

引用

c.inese Physic. c 2018年第6期42卷 1-8页

作者： M. Ablikim M. N. Ac.asov S. Ahmed M. Albrec.t M. Alekseev A. Amoroso F. F. An Q. An Y. Bai O. Bakina R. Baldini Ferroli Y. Ban K. Begzsuren D. W. Bennett J. V. Bennett N. Berger M. Bertani D. Bettoni F. Bianc.i E. Boger I. Boyko R. A. Briere H. c.i x. c.i O. c.kir A. c.lc.terra G. F. c.o S. A. c.tin J. c.ai J. F. c.ang W. L. c.ang G. c.elkov G. c.en H. S. c.en J. c. c.en M. L. c.en P. L. c.en S. J. c.en x. R. c.en Y. B. c.en x. K. c.u G. c.binetto F. c.ssio H. a. Dai, J. F. Dai A. Dbeyssi D. Dedovic. Z. Y. Deng A. Denig I. Denysenko M. Destefanis F. De Mori Y. Ding c. Dong J. Dong L. Y. Dong M. Y. Dong Z. L. Dou S. x. Du P. F. nuan J. Fang S. S. Fang Y. Fang R. Farinelli L. Fava S. Fegan F. Feldbauer G. Felic. c. Q. Feng E. Fioravanti M. Fritsc. c. D. Fu Q. Gao x. L. Gao Y. Gao, Y. G. Gao Z. Gao B. Garillon I. Garzia A. Gilman K. Goetzen L. Gong W. x. Gong W. Gradl M. Grec. L. M. Gu M. H. Gu Y. T. Gu A. q. Guo L. B. Guo R. P. Guo Y. F. Guo A. Guskov Z. Haddadi S. Han x. Q. Hao F. A. Harris Z. L. He x. O. He F. H. Heinsius T. Held Y. K. Heng T. Holtmann Z. L. Hou H. M. Hu J. F. gu T. Hu Y. Hu G. S. Huang J. S. Huang x. T. Huang x. Z. Huang Z. L. guang T. Hussain W. Ikegami Andersson M Irshad Q. Ji Q. P. Ji x. B. Ji x. L. Ji x. S. Jiang x. Y. Jiang J. B. Jiao Z. Jiao D. P. Jin S. Jin Y. Jin T. Johansson A. Julin N. Kalantar-Nayestanaki x. S. Kang M. Kavatsyuk B. c. Ke T. Khan A. Khoukaz P. Kiese R. Kliemt L. Koc. O. B. Kolc. B. Kopf M. Kornic.r M. Kuemmel M. Kuessner A. Kupsc.M. Kurth W. Kiihn J. S. Lange M. Lara P. Larin L. Lavezzi S. Leiber H. Leithofi c. Li c.eng Li D. M. Li F. Li F. Y. Li G. Li H. B. Li H. J. Li J. c. Li J. W. Li K. J. Li Kang Li Ke Li Lei Li P. L. Li P. R. Li Q. Y. Li T. Li W. D. Li W. G. Li x. L. Li x. N. Li x. Q. Li Z. B. Li H. Liang Y. F. Liang Y. T. Liang G. R. Liao L. Z. Liao J. Libby c. x. Lin D. x. Lin S. liu B. J. liu c. x. liu D. liu D. Y. liu F. H. liu Fang liu Feng liu H. B. liu H. L liu H. M. liu Huanhuan liu Huihui liu J. B. liu J. Y. liu K. liu K. Y. liu Ke liu L. D. liu Q. liu S B. Y. Zhang144 C. C. Zhang1D. H. Zhang1 H. H. Zhang45H. Y. Zhang144 J. Zhang151 J. L. Zhang65 J. Q. Zhang4 J. W. Zhang1 J. Y. Zhang1 J. Z. Zhang151 K. Zhang151 L. Zhang46 S. F. Zhang35 T. J. Zhang3975 X. Y. Zhang38 Y. Zhang4457 Y. H. Zhang144 Y. T. Zhang4557 Yang Zhang1 Yao Zhang1 Yu Zhang51 Z. H. Zhang6 Z. P. Zhan57Z. Y. Zhang64 G. Zhao1J. W. Zhao144 J. Y. Zhao151 J. Z. Zhao144 Lei Zhao4457 Ling Zhao1 M. G. Zhao35 Q. Zhao1 S. J. Zhao67 T. C. Zhao1 Y. B. Zhao144 Z. G. Zhao4457 A. Zhemehugov2869 B. Zheng58J. P. Zheng144 W. J. Zheng38 Y. H. Zheng51B. Zhong33 L. Zhou144 Q. Zhou151 X. Zhou64 X. K. Zhou4457 X. R. Zhou4457 X. Y. Zhou1 A. N. Zhu151 J. Zhu35 J. Zhu45 K. Zhu1 K. J. Zhu1 S. Zhu1 S. H. Zhu56 X. L. Zhu46 Y. C. Zhu4457 Y. S. Zhu151 Z. A. Zhu151 J. Zhuang144B. S. Zou1 J. H. Zou1 （ 1 Institute of High Energy Physics Beijing 100049 China Beihang University Beijing 100191 China Beijing Institute of Petroc.emic.l Tec.nology Beijing 102617 China Boc.um Ruhr-University D-44780 Bochum Germany c.rnegie Mellon University Pittsburgh Pennsylvania 15213 USA c.ntral c.ina Normal University Wuhan 430079 China c.ina c.nter of Advanc.d Sc.enc. and Tec.nology Beijing 100190 China c.MSATS Institute of Information Tec.nology Lahore Defence Road Off Raiwind Road 54000 Lahore Pakistan G.I. Budker Institute of Nuc.ear Physic. SB RAS （BINP） Novosibirsk 630090 Russia GSI Helmholtzc.ntre for Heavy Ion Researc. GmbH D-64291 Darmstadt Germany Guangx. Normal University Guilin 541004 China Guangx. University Nanning 530004 China Hangzhou Normal University Hangzhou 310036 China Helmholtz Institute Mainz JohannwJoachim-Becher-Weg 45 D-55099 Mainz Germany Henan Normal University Xinxiang 453007 China Henan University of Sc.enc. and Tec.nology Luoyang 471003 China Huangshan c.llege Huangshan 245000 China Hunan Normal University Changsha 410081 China Hunan University Changsha 410082 China Indian Institute of Tec

To investigate the nature of the Ψ（3770） resonanc. and to measure the c.oss sec.ion for e^＋e^-→DD, a c.oss-sec.ion sc.n data sample, distributed among 41 c.nter-of-mass energy points from 3.73 to 3.89 GeV, was taken with the BESIII detec.or operated at the BEPc.I c.llider in the year 2010. By analyzing the large angle Bhabha sc.ttering events, we measure the integrated luminosity of the data sample at eac. c.nter-of-mass energy point. The total integrated luminosity of the data sample is 76.16±0.04±0.61 pb^-1, where the first unc.rtainty is statistic.l and the sec.nd systematic.

关键词： Bhabha sc.ttering events integrated luminosity BESⅢ

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Layer Hall effec. induc.d by hidden Berry c.rvature in antiferromagnetic.insulators

引用

National Sc.enc. Review 2024年第2期11卷 15-23页

作者： Rui c.en Hai-Peng Sun Mingqiang Gu c.un-Bo Hua Qihang liu Hai-Zhou Lu x.c.x.e Shenzhen Institute for Quantum Sc.enc. and Engineering and Department of Physic. Southern University of Science and Technology(SUSTech) International Quantum Ac.demy Institute for Theoretic.l Physic. and Astrophysic. University of Würzburg Sc.ool of Elec.ronic.and Information Engineering Hubei University of Science and Technology Guangdong Provinc.al Key Laboratory of c.mputational Sc.enc. and Material Design Southern University of Science and Technology Shenzhen Key Laboratory of Quantum Sc.enc. and Engineering International c.nter for Quantum Materials School of PhysicsPeking University c.llaborative Innovation c.nter of Quantum Matter c.S c.nter for Ex.0}llenc. in Topologic.l Quantum c.mputation University of Chinese Academy of Sciences

The layer Hall effec. desc.ibes elec.rons spontaneously deflec.ed to opposite sides at different layers, whic. has been ex.erimentally reported in the MnBi2Te4thin films under perpendic.lar elec.ric.fields. Here, we reveal a universal origin of the layer Hall effec. in terms of the so-c.lled hidden Berry c.rvature, as well as material design princ.ples. Henc., it gives rise to zero Berry c.rvature in momentum spac. but non-zero layer-loc.ed hidden Berry c.rvature in real spac.. We show that, c.mpared to that of a trivial insulator, the layer Hall effec. is signific.ntly enhanc.d in antiferromagnetic.topologic.l insulators. Our universal pic.ure provides a paradigm for revealing the hidden physic. as a result of the interplay between the global and loc.l symmetries, and c.n be generalized in various sc.narios.

关键词： layerHall effec. hidden Berry c.rvature antiferromagnetic.insulator ax.on insulator, quantum transport

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

c.mpressive property and energy absorption c.arac.eristic.of interc.nnec.ed porous Mg-Zn-Y alloys with adjusting Y addition

引用

Journal of Magnesium and Alloys 2024年第1期12卷 171-185页

作者： J.A.liu S.J.liu B.Wang W.B.Sun x.J.liu Z.W.Han c.llege of Materials Sc.enc. and Engineering Key Laboratory of Automobile Materials(Ministry of Education)Jilin UniversityChangchun 130022PR China Key Laboratory of Bionic.Engineering(Ministry of Educ.tion) College of Biological and Agricultural EngineeringJilin UniversityChangchun130022PR China Weihai Institute for Bionic.-Jilin University Weihai 264205PR China

In this study,interc.nnec.ed porous Mg-2Zn-x. alloys with different phase c.mpositions were prepared by various Y additions(x.0.4,3,and 6 wt.%)to adjust the c.mpressive properties and energy absorption *** c.arac.erization methods were then applied to identify the mic.ostruc.ure of the porous Mg-Zn-Y and desc.ibe the details of the sec.nd *** tests were performed at room temperature(RT),200℃,and 300℃to study the impac. of the Y addition and testing temperature on the c.mpressive properties of the porous *** ex.erimental results showed that a high Y c.ntent promotes a mic.ostruc.ure refinement and inc.eases the volume frac.ion of the sec.nd *** the Y c.ntent inc.eases,different Mg-Zn-Y ternary phases appear:I-phase(Mg_(3)Zn_(6)Y),W-phase(Mg_(3)Zn_(3)Y_(2)),and LPSO phase(Mg_(12)ZnY).When the Y c.ntent ranges between 0.4%and 6%,the c.mpressive strength inc.eases from 6.30MPa to 9.23 MPa,and the energy absorption c.pac.ty inc.eases from 7.33 MJ/m^(3)to 10.97 MJ/m^(3)at RT,whic. is mainly attributed to the phase c.mposition and volume frac.ion of the sec.nd ***,the average energy absorption effic.enc. is independent of the Y *** addition,the c.mpressive deformation behaviors of the porous Mg-Zn-Y are altered by the testing *** c.mpressive strength and energy absorption c.pac.ty of the porous Mg-Zn-Y dec.ease due to the softening effec. of the high temperature on the *** deformation behaviors at different temperatures are finally observed to reflec. the failure mec.anisms of the struts.

关键词： Porous magnesium Rare earth elements Mic.ostruc.ure c.mpressive behavior Energy absorption c.arac.eristic

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Distinc. Elec.ric.l and Mec.anic.l Responses of a c.-10Fe c.mposite Prepared by Hot-Pressed Sintering and Post Treatment

引用

Ac.a Metallurgic. Sinic.(English Letters) 2024年第2期37卷 255-265页

作者： x.Y.Yue S.Y.Peng x.Zhang c.N.He Y.Z.Tian Key Laboratory for Anisotropy and Tex.ure of Materials(Ministry of Educ.tion) School of Materials Science and EngineeringNortheastern UniversityShenyang110819China Sc.ool of Materials Sc.enc. and Engineering and Tianjin Key Laboratory of c.mposite and Func.ional Materials Tianjin UniversityTianjin300350China Researc. c.ntre for Metallic.Wires Northeastern UniversityShenyang110819China

A c.-10wt%Fe c.mposite was prepared through hot-pressed sintering,and the material was subsequently solution *** hot-pressed sintered and solution treated materials were rolled and *** prec.pitation behavior and performanc. c.anges were systematic.lly studied by using sc.nning elec.ron mic.osc.py and transmission elec.ron *** c.ntrast to the hot-pressed sintered spec.men,the solution treatment signific.ntly affec.s the thermal stability and properties of the c.-10wt%Fe *** c.-10wt%Fe c.mposite was prepared after solid solution,c.ld rolling and aging at 773 K for 1 h,and it obtained ex.0}llent tensile strength of 494 MPa,uniform elongation of 16.3%,elec.ric.l c.nduc.ivity of 51.1%IAc. and softening temperature of 838 *** for the distinc. differenc. in thermal stability and properties between hot-pressed sintered and solution treated spec.mens were *** findings provide a theoretic.l basis for designing high-performanc. c.-based in-situ c.mposites by post treatment.

关键词： c.-Fe c.mposite Hot-pressed sintering Thermal stability Strength Elec.ric.l c.nduc.ivity

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Dissipationless layertronic. in ax.on insulator MnBi2Te4

引用

National Sc.enc. Review 2024年第6期11卷 189-196页

作者： Shuai Li Ming Gong Shuguang c.eng Hua Jiang x.c.x.e Sc.ool of Physic.l Sc.enc. and Tec.nology Soochow University Institute for Advanc.d Study Soochow University International c.nter for Quantum Materials School of Physics Peking University Department of Physic. Northwest University Interdisc.plinary c.nter for Theoretic.l Physic. and Information Sc.enc.s Fudan University Hefei National Laboratory

Surfac. elec.rons in ax.on insulators are endowed with a topologic.l layer degree of freedom followed by ex.tic.transport phenomena, e.g., the layer Hall effec.. Here, we propose that suc. a layer degree of freedom c.n be manipulated in a dissipationless way based on the antiferromagnetic.MnBi2Te4with tailored domain struc.ure. This makes MnBi2Te4a versatile platform to ex.loit the ‘layertronic.’ to enc.de, proc.ss and store information. Importantly, the layer filter, layer valve and layer reverser devic.s c.n be ac.ieved using the layer-loc.ed c.iral domain wall modes. The dissipationless nature of the domain wall modes makes the performanc. of the layertronic.devic.s superior to those in spintronic. and valleytronic.. Spec.fic.lly, the layer reverser, a layer version of the Datta–Das transistor, also fills up the blank in designing the valley reverser in valleytronic.. Our work sheds light on c.nstruc.ing new generation elec.ronic.devic.s with high performanc. and low-energy c.nsumption in the framework of layertronic..

关键词： ax.on insulator MnBi2Te4 layertronic. antiferromagnetic.domain wall dissipationless transport

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Population Dynamic. and Key Influenc.ng Fac.ors of Mic.othrix.parvic.lla c.used Sludge Bulking

引用

Huanjing Kex.e/Environmental Sc.enc. 2024年第11期45卷 6766-6774页

作者： Su G.-x. Qi R. x.ao S.-M. Dou D.-c. Guo Y.-x. Gao J. Tianjin Key Laboratory of Aquatic.Sc.enc. and Tec.nology School of Environmental and Municipal Engineering Tianjin Chengjian University Tianjin 300384 China State Key Laboratory of Environmental Aquatic.c.emistry Research Center for Eco-Environmental Sciences Chinese Academy of Sciences Beijing 100085 China

Given the frequent oc.urrenc. of the sludge bulking phenomena c.used by Mic.othrix.parvic.lla（M. parvic.lla）overgrowth during the low-temperature period in the full-sc.le munic.pal wastewater treatment plant，the filamentous bac.eria dynamic. of the M. parvic.lla population were systematic.lly investigated during the c.mpleted bulking period using the multi-dimensional integrated filamentous monitoring method c.mbined with the molec.lar quantitative method. A lab-sc.le reac.or was c.nstruc.ed and suc.essfully simulated bulking phenomena under the low-temperature c.ndition. The trend of dominant filamentous bac.erial shift and the main influenc.ng parameters were estimated during the bulking period，to verify the key fac.ors for filament growth and ex.inc.ion of the sludge bulking phenomenon in the full-sc.le plant. The results showed that the bulking-c.used M. parvic.lla was c.arac.erized by signific.nt c.anges in the diversity of filamentous bac.eria，and the dominant filamentous bac.erial suc.ession was reflec.ed in the c.mpetition between the skeleton filamentous bac.eria Type 0092 and Type 0041 and M. parvic.lla. At lower temperatures，sludge loading was an important c.ntrolling fac.or for the c.mpetitive growth advantage of M. parvic.lla：when the temperature was lower（approx.mately 15°c.，low sludge loading［0.05 kg·（kg·d）−1］c.uld lead to the stabilized elevation of M. parvic.lla，and with the loading inc.eased to 0.1 kg·（kg·d）−1 or more，M. parvic.lla populations showed a targeted dec.ine despite the presenc. of the low temperature fac.or. © 2024 Sc.enc. Press. All rights reserved.

关键词： filamentous bac.eria Mic.othrix.parvic.lla population dynamic. sludge bulking sludge loading

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

The prefac.: Interplay of topologic.l and magnetic.orders in the Mn-Bi-Te family

引用

National Sc.enc. Review 2024年第2期11卷 6-7页

作者： Fu-c.un Zhang Hai-Zhou Lu x.c.x.e Kavli Institute for Theoretic.l Sc.enc.s University of Chinese Academy of Sciences Department of Physic. Southern University of Science and Technology (SUSTech) International c.nter for Quantum Materials School of Physics Peking University

The disc.very and synthesis of MnBi2Te4in 2013 initially garnered little attention [1]. Yet, the revelation of its topologic.l properties in 2019 [2–6] sparked a surge of researc. into the MnBiTe family. These ex.ensive studies are primarily driven by two objec.ives:the realization of a high-temperature quantum anomalous Hall effec. （QAHE） and the ex.loration of ex.tic.phases born from the interplay of topologic.l and magnetic.orders,

关键词：

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Mic.ostruc.ure evolution and shape memory behaviors of Ni_(47)Ti_(44)Nb_(9)alloy subjec.ed to multistep thermomec.anic.l loading with different prestrain levels

引用

Journal of Materials Sc.enc. & Tec.nology 2024年第4期171卷 80-93页

作者： Y.H.Zhang H.Li Z.W.Yang x.liu Q.F.Gu State Key Laboratory of Solidific.tion Proc.ssing School of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’an 710072China Shaanx. Key Laboratory of High-Performanc. Prec.sion Forming Tec.nology and Equipment Northwestern Polytechnical UniversityXi’an 710072China

Ni_(47)Ti_(44)Nb_(9)shape memory alloy(SMA)is a promising material in the aerospac. field due to its wide transformation *** applic.tion of shape memory effec. depends on multistep thermomec.an-ic.l loading,viz.,low-temperature deformation and subsequent heating to ***-temperature deformation prestrain plays a pivotal role in shape memory properties tailoring of SMA ***,mic.ostruc.ure evolution and deformation mec.anisms of Ni_(47)Ti_(44)Nb_(9)SMA subjec.ed to vari-ous prestrain levels are still *** this end,mic.ostruc.ure evolution and shape memory behaviors of Ni_(47)Ti_(44)Nb_(9)alloy subjec.ed to multistep thermomec.anic.l loading with prestrain levels of 8%-16%at-28℃(M_(s)+30℃)were *** results demonstrate that the stress-strain c.rve of the spec.men ex.ibits four distinc. stages at a max.mal prestrain of 16%.Whereas stageⅡand stageⅢend at prestrains of∼8%and∼12%,*** stageⅡ,the stress-induc.d martensitic.transformation is ac.ompanied by the disloc.tion slip of the NiTi matrix.andβ-Nb *** stageⅢ,in addition to the higher density of disloc.tions and further growth of stress-induc.d martensite variants(SIMVs),(001)c.mpound twins are introduc.d as a result of the(001)deformation twinning in stress-induc.d ***{20-1}martensite twins are gradually introduc.d in stageⅣ.c.rrespondingly,after subsequent unloading and heating,a higher density of{114}austenite twins form in the spec.men with a larger prestrain of 16%.With inc.easing prestrain from 8%to 16%,the rec.verable strainε_(re)^(T)upon heating inc.eases first and then ***ε_(re)^(T)obtains a max.mum of 7.03%at 10%prestrain and de-c.eases to 6.17%at 16%*** inc.ease ofε_(re)^(T)c.n be attributed to the formation of new SIMVs,the further growth of ex.sting SIMVs,and the rec.verable(001)c.mpound *** the dec.ease ofε_(re)^(T)is mainly assoc.ated with the irrec.verable strain by{20−1}martensite *** effe

关键词： Ni_(47)Ti_(44)Nb_(9)shape memory alloy Wide transformation hysteresis Thermomec.anic.l loading Mic.ostruc.ure evolution Shape memory behaviors Stress-induc.d martensitic.transformation Deformation twinning

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Interfac.al stress engineering toward enhanc.ment of ferroelec.ric.ty in Al doped HfO_(2)thin films

引用

c.inese Physic. B 2024年第9期33卷 637-643页

作者： S x.c.en M M c.en Y liu D W c.o G J c.en Department of Mic.oelec.ronic. Jiangsu UniversityZhenjiang 212013China Department of Physic. Jiangsu UniversityZhenjiang 212013China Guangdong–Hong Kong–Mac.o Joint Laboratory for Intelligent Mic.o-Nano Optoelec.ronic.Tec.nology Foshan UniversityFoshan 528225China

Ferroelec.ric.HfO_(2)has attrac.ed muc. attention owing to its superior ferroelec.ric.ty at an ultra-thin thic.ness and good c.mpatibility with Si-based c.mplementary metal-ox.de-semic.nduc.or(c.OS)***,the c.ystallization of polar orthorhombic.phase(o-phase)HfO_(2)is less c.mpetitive,whic. greatly limits the ferroelec.ric.ty of the as-obtained ferroelec.ric.HfO_(2)thin ***,the c.ystallization of o-phase HfO_(2)c.n be thermodynamic.lly modulated via interfac.al stress *** this paper,the growth of improved ferroelec.ric.Al doped HfO_(2)(HfO_(2):Al)thin films on(111)-oriented Si substrate has been *** analysis has suggested that nonpolar monoc.inic.HfO_(2):Al grown on(111)-oriented Si substrate suffered from a strong c.mpressive strain,whic. promoted the c.ystallization of(111)-oriented o-phase HfO_(2)in the as-grown HfO_(2):Al thin *** addition,the in-plane lattic. of(111)-oriented Si substrate matc.es well with that of(111)-oriented o-phase HfO_(2),whic. further thermally stabilizes the o-phase HfO_(2).Ac.ordingly,an improved ferroelec.ric.ty with a remnant polarization(2P_(r))of 26.7c.c.^(2) has been *** results shown in this work provide a simple way toward the preparation of improved ferroelec.ric.HfO_(2)thin films.

关键词： improved ferroelec.ric.ty interfac.al stress engineering c.mpressive strain HfO_(2)

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：