检索结果-南通市图书馆

AgSb0.96Q0.04Te2（Q=ge、Zn、Cd、Sn、Pb）载流子输运行为调控与热电性能优化

铸造技术 2024年第9期45卷 880-886页

作者：李若琰葛邦治周重见西北工业大学凝固技术国家重点实验室

AgSbTe2由于其固有的极低热导率与较大的塞贝克系数，在中低温发电应用中具有很大的潜力。但是由于本征低载流子浓度和阳离子的无序性导致材料的低电荷迁移率，并且二者存在强烈的耦合关系，AgSbTe2体系电学性能一直未能有效提升。本文... 详细信息

AgSbTe2由于其固有的极低热导率与较大的塞贝克系数，在中低温发电应用中具有很大的潜力。但是由于本征低载流子浓度和阳离子的无序性导致材料的低电荷迁移率，并且二者存在强烈的耦合关系，AgSbTe2体系电学性能一直未能有效提升。本文通过向Sb离子位点掺杂二价元素，制备了一系列AgSb0.96Q0.04Te2（Q=Zn、Sn、ge、Pb、Cd）热电化合物，成功实现了载流子浓度与载流子迁移率之间的解耦，进而大幅提升了AgSbTe2热电性能。研究发现，Pb元素的掺杂可优化p型AgSbTe2的载流子浓度，同时提升载流子迁移率，进而大幅提升电学性能。相应的最大电导率和功率因子在548 K时分别达到229 S/cm和15.1μW/（cm·K2），相比未掺杂AgSbTe2样品分别提升了108%和44%。最终，AgSb0.96Q0.04Te2晶体在298与548 K下zT值分别达到了0.60与1.53，且在298～598 K内平均zT达1.10。

关键词： AgSbTe2 阳离子位元素掺杂功率因子热电性能

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Synthesis of nearly spherical AlN particles by an in-situ nitriding combustion route

引用

Journal of Advanced Ceramics 2021年第2期10卷 291-300页

作者： Zhilei Wei Kang Li bangzhi ge Chaowei Guo Hongyan Xia Yajie Guo Zhongqi Shi State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong UniversityXi’an710049China Engineering Research Center of Transportation Materials of Ministry of Education School of Materials Science and EngineeringChang’an UniversityXi’an710064China

Spherical AlN powders with micrometer size have attracted great attention owing to their good fluidity and dispersity. However, the industrial preparation methods usually require high temperature and long soaking time, which lead to the high cost and limit the wide application of the products. Herein, nearly spherical AlN particles with the average size of 2.5 μm were successfully synthesized via an in-situ combustion synthesis method. The effect of N_(2) pressure, NH_(4)Cl content, and Al particle size on the combustion reaction procedure, phase composition, and microstructure of the products was systematically investigated. The results showed that the decreased N_(2) pressure, increased NH_(4)Cl content, and Al particle size led to the decreasing of combustion temperature and speed, which further affected the morphology of the products. As a result, low N_(2) pressure(0.2 MPa), a small amount of NH4Cl(0.5 wt%), and fine Al particles(~2.5 μm) contributed to a moderate combustion temperature and facilitated the formation of nearly spherical AlN particles. In addition, based on the gas-releasing assisted quenching experiments and thermo-kinetic analysis, a two-step growth mechanism for the nearly spherical AlN particles was rationally proposed. The present method shows the advantages of low cost and high efficiency for preparing nearly spherical AlN particles, which can be used as raw materials for electronic substrates and fillers for packaging materials.

关键词： combustion synthesis AlN microstructure growth mechanism

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Preparation and anisotropic thermophysical properties of SiC honeycomb/Al-Mg-Si composite via spontaneous infiltration

引用

Progress in Natural Science:Materials International 2019年第2期29卷 177-183页

作者： Zhejian Zhang Zhongqi Shi Biguo Yang bangzhi ge Xiaoyu Zhang Yajie Guo State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Engineering Research Center of Transportation Materials of Ministry of Education School of Materials Science and Engineering Chang'an University

The SiC honeycomb/Al-Mg-Si composite with interpenetrated microstructure was prepared by spontaneous infiltration of Al-8 wt%Mg-7 wt%Si alloy into directional porous SiC honeycomb served as reinforcement. The microstructure and anisotropic thermophysical properties of this composite were also examined. The results showed that the initial microstructure of the SiC honeycomb can be retained and the as-prepared SiC honeycomb/Al-Mg-Si composite exhibited significantly anisotropic characteristics. Meanwhile, the alloying treatment on the Al matrix can avoid the generation of Al;C;and promote the wettability between Al and ***,the directional porous SiC honeycomb with such a low ceramic content（19 vol.%） made it possible for the composite to have a higher thermal conductivity(138.3 W/（m?K）) in the axial direction and a lower coefficient of thermal expansion(11.40 × 10;/K) in the radial *** influences of the SiC honeycomb reinforcement on the anisotropic thermophysical properties were also studied by the theoretical models in comparing with the experimental results.

关键词： SiC honeycomb Al-Mg-Si alloy Spontaneous infiltration Anisotropy Thermophysical properties

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Enhanced figure of merit for famatinite Cu_(3)SbSe_(4)via band structure tuning and hierarchical architecture

引用

Journal of Materiomics 2023年第6期9卷 1263-1272页

作者： Lijun Zhao Haolin Ye Xinmeng Wu Jian Yang Lihua Yu Zhongqi Shi Shahid Hussain Guanjun Qiao Junhua Xu bangzhi ge Li Wang Chongjian Zhou School of Materials Science and Engineering Jiangsu University of Science and TechnologyZhenjiang212100JiangsuChina State Key Laboratory of Solidification Processing Key Laboratory of Radiation Detection Materials and DevicesMinistry of Industry and Information TechnologyNorthwestern Polytechnical UniversityXi'an710072ShaanxiChina School of Materials Science and Engineering Jiangsu UniversityZhenjiang212013JiangsuChina State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong UniversityXi'an710049ShaanxiChina

The p-type Te-free Cu_(3)SbSe_(4)with famatinite structure is a potential candidate for thermoelectric materials due to the low cost and eco-friendly constituent ***,its strong bipolar effect and high lattice thermal conductivity(klat)are the main challenges for its performance ***,we report a new strategy to enhance its figure of merit zT~0.86 at 673 K for Cu_(3)Sb_(0.95)Fe_(0.05)Se_(2.8)S_(1.2)via band structure tuning and hierarchical ***,S substituted Se atoms in lattice can widen the band gap to alleviate the bipolar ***,Fe doping in Sb site significantly increases the density of states,thus increasing the carrier effective mass,and obtaining a remarkably high Seebeck coefficient of~560 mV/K at 300 ***,the induced hierarchical architecture defects resulting in a minimum klat of~0.48 W·m^(-1)·K^(-1)at 673 ***,the improved Seebeck coefficient combined with low thermal conductivity leads to an enhanced zT.

关键词： Cu3SbSe4-Based materials Defects Band gap Thermoelectric properties Solid solution

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：