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A Comparison of Optical Properties of CuO and Cu<sub>2</sub>O Thin Films for Solar Cell Applications

Materials Sciences and Applications 2021年第7期12卷 315-329页

作者： Radu Bunea ashwin kumar saikumar Kalpathy Sundaram University of Central Florida Orlando USA

Solar energy is becoming more popular and widespread, and consequently, the materials to manufacture solar cells are becoming more limited and costly. Therefore, in order to keep solar energy affordable and available, we must research alternative materials such as copper oxides. Some benefits of copper oxides include being available in abundance, affordable, low toxicity, low bandgap, and a high absorption coefficient—all of which contribute to it being a valuable interest for the manufacturing of solar cells. In this study, CuO thin films were synthesized utilizing RF sputtering technique with deposition occurring at room temperature followed by thermal annealing between 100°C and 400°C and using different gases, oxygen (O2) (oxidizing and reactive gas) and nitrogen (N2) (inert gas), besides air. Afterwards, these thin films were evaluated for a range of wavelengths: 200 - 400 nm (UV spectrum), 400 - 700 nm (Visible spectrum), and 700 - 800 nm (IR spectrum), for both, optical transmittance and photoluminescence. In addition, the CuO results were compared to our Cu2O results from a previous study to assess their differences. In the results of this study, the CuO thin film initially had a bandgap of 2.19 eV at room temperature, and by increasing the annealing temperature to different levels, the bandgap decreased respectively. The presence of air in the chamber allowed for the highest decrease, followed by the nitrogen (N2) and the lowest decrease was observed in the presence of oxygen (O2). This was reflected in the decrease in the bandgap values from 2.19 eV (room temperature) to 2.05 eV for the films annealed at 400°C.

关键词： Cu2O Thin Film Cuo Thin Film Optical Properties Bandgap Photoluminescence

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The Effect of Annealing Temperature and Reactive Gases on Optical Properties of Cu<sub>2</sub>O Thin Films

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Materials Sciences and Applications 2021年第5期12卷 182-196页

作者： Radu Bunea ashwin kumar saikumar Kalpathy Sundaram University of Central Florida Orlando FL USA

The Cu2O thin films were synthesized by using RF sputtering technique. Comparisons were made with films created by deposition at room temperature followed by thermal annealing between 100°C and 400°C and using different gases, oxygen (O2) (oxidizing and reactive gas) and nitrogen (N2) (inert gas), besides air. The thickness of the thin films was kept constant, around 2000 Å (Angstrom). In addition, the RF power and pressure deposition were kept constant, as well. The thin films were evaluated for a range of wavelengths between 200 nm and 400 nm (Ultra Violet spectrum), 400 nm and 700 nm (Visible spectrum), 700 nm and 800 nm (Infrared spectrum) for both, optical transmittance and photoluminescence. From the experimental results, the higher annealing temperature and the introduction of nitrogen (N2) gas produced the following results: the optical bandgap for the Cu2O was found to be 2.23 eV and photoluminescence peaks were around 551 nm and 555 nm, which matched the theoretical analyses. Overall, there was a decrease in the optical bandgap of the Cu2O from 2.56 eV at room temperature to 2.23 eV for the film annealed in nitrogen gas at 400°C. This indicates that the Cu2O is a potential candidate in solar cell applications.

关键词： Cu2O Thin Film Optical Properties Bandgap Photoluminescence

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