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Author Correction: ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

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Opto-Electronic Advances 2024年第3期7卷 50-50页

作者： Maria Baeva Dmitry Gets artem polushkin Aleksandr Vorobyov Aleksandr Goltaev Vladimir Neplokh Alexey Mozharov Dmitry VKrasnikov Albert GNasibulin Ivan Mukhin Sergey Makarov Alferov University Khlopina 8/3St.Petersburg 194021Russia Department of Physics and Engineering ITMO UniversityLomonosova 9St.Petersburg 197101Russia Institute of Automation and Control Processes(IACP) Far Eastern Branch of Russian Academy of SciencesUlitsa Radio 5Vladivostok 690041Primorsky KraiRussia Peter the Great St.Petersburg Polytechnic University Polytechnicheskaya 29St.Petersburg 195251Russia Skolkovo Institute of Science and Technology Nobel 3Moscow 121205Russia Qingdao Innovation and Development Center Harbin Engineering UniversityQingdao 266000China.

Correction to:Opto-Electronic Advances https://***/10.29026/oea.2023.220154 published online 26 April 2023 After the publication of this article1,it was brought to our attention that calculations of the PeLEC device elec-troluminescent(EL)efficiency contained a mistake,leading to an inaccurate quantity *** device’s maxim-um EL efficiency constitutes not‘~120 klm/W’but‘4.3 lm/W’*** details are listed below.

关键词： value. perovskite listed

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ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

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Opto-Electronic Advances 2023年第9期6卷 45-58页

Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered ***,we develop a perovskite electrochemical cell both for light emission and detection,where the active layer consists of a composite material made of halide perovskite microcrystals,polymer support matrix,and added mobile *** perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition,emitting light at the wavelength of 523 nm,yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 4.3 lm/*** device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40%lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass ***,the device operates as a photodetector with a sensitivity up to 0.75 A/W,specific detectivity of 8.56×1011 Jones,and linear dynamic range of 48 *** technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50μm.

关键词： composite inorganic halide perovskite silicon single walled carbon nanotubes light-emitting electrochemical cell photodetector indicator display

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Direct laser interference patterning of nonvolatile magnetic nanostructures in Fe60Al40 alloy via disorder‐induced ferromagnetism

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Opto-Electronic Advances 2020年第1期3卷 1-7页

作者： Philipp Graus Thomas BMöller Paul Leiderer Johannes Boneberg Nikolay I.polushkin Department of Physics University of Konstanz78457 KonstanzGermany Institute for Physics of Microstructures of RAS 603950 GSP-105 Nizhny NovgorodRussian

Current magnetic memories are based on writing and reading out the domains with opposite orientation of the magnetization ***,information can be encoded in regions with a different value of the saturation *** latter approach can be realized in principle with chemical order-disorder transitions in intermetallic ***,we study such transformations in a thin-film(35 nm)Fe60Al40 alloy and demonstrate the formation of periodic magnetic nanostructures(PMNS)on its surface by direct laser interference patterning(DLIP).These PMNS are nonvolatile and detectable by magnetic force microscopy(MFM)at room temperature after DLIP with a single nanosecond *** provide different arguments that the PMNS we observe originate from increasing magnetization in maxima of the interference pattern because of chemical disordering in the atomic lattice of the alloy at temperatures T higher than the critical temperature Tc for the order(B2)-disorder(A2)***,our simulations of the temporal evolution of a partially ordered state at T>Tc reveal that the disordering rate is significant even below the melting ***,we find that the PMNS are erasable with standard thermal annealing at T

关键词： thin films laser patterning magnetic dots magnetic memory

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