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Intrinsic Photoconductivity of Few-layered ZrS2 Phototransistors via Multiterminal Measurements

Semiconductor Science and Information Devices 2019年第2期1卷 19-28页

作者： Rukshan M.Tanthirige Carlos Garcia Saikat Ghosh Frederick Jackson II Jawnaye Nash Daniel Rosenmann Ralu Divan Liliana Stan anirudha v.sumant Stephen A.McGill Paresh C.ay Nihar R.Pradhan Layered Materials and Device Physics Laboratory Department of ChemistryPhysics and Atmospheric ScienceJackson State UniversityJacksonMS 39217USA National High Magnetic Field Laboratory TallahasseeFL 32310USA Kunming University of Science and Technology Kunming 650500China Center for Nanoscale Materials Argonne National Laboratory9700 S-Cass AvenueLemontIL-60439USA

We report intrinsic photoconductivity studies on one of the least examined layered compounds,***-atomic layer ZrS2 field-effect transistors were fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two-and four-terminal configurations under the illumination of 532 nm laser *** measured photocurrent as a function of the incident optical power at several source-drain(bias)*** observe a significantly large photoconductivity when measured in the multiterminal(four-terminal)configuration compared to that in the two-terminal *** an incident optical power of 90 nW,the estimated photosensitivity and the external quantum efficiency(EQE)measured in two-terminal configuration are 0.5 A/W and 120%,respectively,under a bias voltage of 650 *** the same conditions,the four-terminal measurements result in much higher values for both the photoresponsivity(R)and EQE to 6 A/W and 1400%,*** significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface,which greatly impacts the carrier mobility of low conducting *** suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.

关键词： Field-effect transistors Zirconium sulphide Phototransistor Responsivity Quantum efficiency

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