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Advances in diagnostic testing for gastroesophageal reflux disease

World journal of Gastroenterology 2010年第30期16卷 3750-3756页

作者： andrew j gawron Ikuo Hirano Division of Gastroenterology Department of MedicineNorthwestern University Feinberg School of MedicineChicagoIL 60611-2951United States

Gastroesophageal reflux disease (GERD) contributes substantially to morbidity and to costs in the United States health care system. The burden of this disease has resulted in attempts at improving diagnosis and characterizing patients. Numerous research and technical advances have enhanced our understanding of both the utility and limitations of a variety of diagnostic modalities. The purpose of this review is to highlight recent advances in GERD diagnostic testing and to discuss their implications for use in clinical practice. Topics addressed include esophageal pH monitoring, impedance testing, symptom association analyses, narrow-band imaging, and histopathology.

关键词： Gastroesophageal reflux disease pH impedance pH monitoring Symptom association

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Dark current suppression in HOT LWIR HgCdTe heterostructures operating in non-equilibrium mode

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红外与毫米波学报 2015年第4期34卷 385-390页

作者： Martyniuk P gawron W Pawluczyk j Keblowski A Madejczyk P Rogalski A Institute of Applied Physics Military University of Technology2 Kaliskieg0 Str. 00-908 Warsaw Poland Vigo System S. A. 129/133 Poznaflska Str. 05-850 O z ar6w Mazowiecki Poland

Typically,infrared detectors require cryogenic cooling to limit dark current w hich is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrow band gap *** Auger suppressed architectures have an advantage over conventional detectors allow ing operation at elevated temperatures>200 *** w ith combination of exclusion and extraction heterojunctions has been proposed to low er Auger *** paper presents a new long-w ave(≈10μm)infrared Hg Cd Te architecture w ith graded gap/doping interfaces and extra barrier located in exclusion heterojunction to suppress dark current for high operating temperature *** barrier implementation reduces dark current by more than 20 A/cm2for room temperature operation.

关键词：红外技术毫米波技术光电技术应用

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Bandgap energy determination of In As Sb epilayers grown by molecular beam epitaxy on Ga As substrates

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Progress in Natural Science:Materials International 2019年第4期29卷 472-476页

作者： K.Murawski E.Gomó?ka M.Kopytko K.Grodecki K.Michalczewski ?.Kubiszyn W.gawron P.Martyniuk A.Rogalski j.Piotrowski Institute of Applied Physics Military University of Technology Vigo System S.A.

InAsSb ternary alloys can be considered as an alternative to HgCdTe for mid-wavelength,as well as long-wavelength infrared *** energy bandgap exhibits nonlinearity versus Sb composition,and hence the correct determination of its value is necessary for the effective design and simulation of optoelectronic *** commonly used expression on the InAsSb energy bandgap provided by Wieder and Clawson overestimated energy bandgap values at high *** this paper,we present two modified empirical relationships which are based on the experimental data obtained in our laboratory and published *** are correct for a wide range of Sb molar composition and *** nonlinearity of the energy gap is described with the adequate bowing *** data collected in our experiment,for samples grown on lattice mismatched GaAs substrates,fits well with a bowing factor of C=0.72 *** minimum bandgap energy that can be reached at room temperature is about 73 meV for a Sb mole fraction,x=*** comparison,the bandgap at low temperatures collected in the literature for samples grown on lattice-matched GaSb substrates is smaller than the measured values in our experiment and fits well with a parabola with C=0.9 eV.

关键词： InAsSb Bandgap energy Bowing Ⅲ-Ⅴ ternary alloys Infrared detectors

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