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第18届国际真空大会

作者： Ling Xu Fei Yang Yuanbao Liao Wenqiang Liu Dong Liu Jun Xu Zhongyuan Ma and kunji chen national laboratory of solid state microstructures and jiangsu provincial key laboratory of photonic and electronic materials sciences and technology School of Physics and School of electronic Science and technology Nanjing University Nanjing 210093 People’s Republic of China

Ternary alloy, Ge2Sb2Te5, Ge1Sb2Te4 are two kinds of compounds along the GeTe-Sb2Te3 pseudobinary line. They are found to have good optical and electrical contrast between the amorphous and crystalline states and, and have featuring characteristics for phase change memory. In this study, the sputtering method is used to prepare Ge2Sb2Te5 and Ge1Sb2Te4 thin films. The band gaps of GST thin films are determined from the measured absorption spectra. With the help of Tauc equation,the estimated optical band gaps of the amorphous, fcc and hexagonal Ge2Sb2Te5 thin films are 0.8, 0.7 and 0.65 eV, respectively. The estimated band gaps of the amorphous, fcc and hexagonal Ge1Sb2Te4 thin films are 0.5 eV, 0.4 and 0.3 eV, which are smaller than that of amorphous. The results of the temperature dependence of the sheet resistance upon a heating rate show that both Ge2Sb2Te5 and Ge1Sb2Te4 thin film exhibit a temperature-activated electrical conductivity. We also measure the carrier mobility μ using surface acoustic wave technology, which is an appropriate method for materials with low conductivities. Typical mobilities for Ge2Sb2Te5 and Ge1Sb2Te4 thin films of about 0.001-1 cm2/Vs and 1-10 cm2/Vs in the temperature range of 300-480 K were found at amorphous and crystalline states respectively. Transport via the hopping among localized states （both from band tail of the valence band and structural vacancies such as localized Tellurium lone pairs） were thought to dominate the temperature between 20-80 C.

关键词： Ge2Sb2Te5 and Ge1Sb2Te4 phase-change materials electronic band structure Electrical transport properties

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Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

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Nano Research 2024年第6期17卷 5569-5577页

作者： Jianqi Dong Dongqi Zhang Yi Ma Daotong You Jinping chen Bin Liu Xingfu Wang Zengliang Shi Chunxiang Xu state key laboratory of Digital Medical Engineering School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China jiangsu provincial key laboratory of Advanced photonic and electronic materials National Laboratory of Solid State MicrostructuresSchool of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Institute of photonics technology Jinan UniversityGuangzhou 510632China Guangdong Engineering Research Center of Optoelectronic Functional materials and Devices Institute of SemiconductorsSouth China Normal UniversityGuangzhou 510631China

Nanostructure photodetectors,as the core component of optoelectronic devices,are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption ***,we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet *** radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias,indicating effective carriers’*** more,by integrating plasmonic effect,the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33×1012 Jones under 325 nm UV light *** the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V *** high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection *** work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.

关键词： GaN/ZnTe core/shell nanopillar array self-power ultraviolet/visible photodetector plasmonic effect

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Influence of High-Pressure Induced Lattice Dislocations and Distortions on Thermoelectric Performance of Pristine SnTe

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Chinese Physics Letters 2024年第5期41卷 61-68页

作者：郑博文陈涛孙海瑞杨曼曼杨兵超陈欣张永胜刘晓兵 laboratory of High-Pressure Physics and materials Science School of Physics and Physical EngineeringQufu Normal UniversityQufu 273165China Advanced Research Institute of Multidisciplinary sciences Qufu Normal UniversityQufu 273165China key Lab of Photovoltaic and Energy Conservation materials Institute of solid state Physics HFIPSChinese Academy of SciencesHefei 230031China University of Science and technology of China Hefei 230026China School of electronic Engineering Huainan Normal University Huainan 232038China

As a sister compound of PbTe, SnTe possesses the environmentally friendly elements. However, the pristine SnTe compounds suffer from the high carrier concentration, the large valence band offset between the L and Σpositions and high thermal conductivity. Using high-pressure and high-temperature technology, we synthesized the pristine SnTe samples at different pressures and systemically investigated their thermoelectric *** pressure induces rich microstructures, including the high-density dislocations and lattice distortions, which serve as the strong phonon scattering centers, thereby reducing the lattice thermal conductivity. For the electrical properties, pressure reduces the harmful high carrier concentration, due to the depression of Sn ***, pressure induces the valence band convergence, reducing the energy separation between the L and Σpositions. The band convergence and suppressed carrier concentration increase the Seebeck coefficient. Thus, the power factors of pressure-sintered compounds do not deteriorate significantly under the condition of decreasing electrical conductivity. Ultimately, for a pristine SnTe compound synthesized at 5 GPa, a higher ZT value of 0.51 is achieved at 750 K, representing a 140% improvement compared to the value of 0.21 obtained using SPS. Therefore, the high-pressure and high-temperature technology is demonstrated as an effectively approach to optimize thermoelectric performance.

关键词： coefficient properties positions

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A compact multi-pixel superconducting nanowire single-photon detector array supporting gigabit space-to-ground communications

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Light(Science & Applications) 2024年第2期13卷 254-266页

作者： Hao Hao Qing-Yuan Zhao Yang-Hui Huang Jie Deng Fan Yang Sai-Ying Ru Zhen Liu Chao Wan Hao Liu Zhi-Jian Li Hua-Bing Wang Xue-Cou Tu La-Bao Zhang Xiao-Qing Jia Xing-Long Wu Jian chen Lin Kang Pei-Heng Wu Research Institute of Superconductor electronics(RISE) School of Electronic Science and EngineeringNanjing UniversityNanjingJiangsu 210023China Purple Mountain Laboratories NanjingJiangsu 211111China Hefei national laboratory HefeiAnhui 230088China national laboratory of solid state microstructures and Department of Physics Nanjing UniversityNanjing 210023China

Classical and quantum space-to-ground communications necessitate highly sensitive receivers capable of extracting information from modulated photons to extend the communication distance from near-earth orbits to deep space *** achieve gigabit data rates while mitigating strong background noise photons and beam drift in a highly attenuated free-space channel,a comprehensive design of a multi-functional detector is *** this study,we present an innovative compact multi-pixel superconducting nanowire single-photon detector array that integrates near-unity detection efficiency(91.6%),high photon counting rate(1.61 Gcps),large dynamic range for resolving different photon numbers(1-24),and four-quadrant position sensing function all within one ***,we have constructed a communication testbed to validate the advantages offered by such an *** 8-PPM(pulse position modulation)format communication experiments,we have achieved an impressive maximum data rate of 1.5 Gbps,demonstrating sensitivities surpassing previous benchmarks at respective *** incorporating photon number information into error correction codes,the receiver can tolerate maximum background noise levels equivalent to 0.8 photons/slot at a data rate of 120 Mbps—showcasing a great potential for daylight operation ***,preliminary beam tracking tests were conducted through open-loop scanning techniques,which revealed clear quantitative dependence indicating sensitivity variations based on beam *** on the device characterizations and communication results,we anticipate that this device architecture,along with its corresponding signal processing and coding techniques,will be applicable in future space-to-ground communication tasks.

关键词： photon supporting correction

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

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Chinese Physics B 2023年第12期32卷 454-458页

作者：李东珂韩俊楠孙腾陈佳明 Etienne Talbot Rémi Demoulin 陈王华皮孝东徐骏陈坤基 School of electronic Science and Engineering National Laboratory of Solid State MicrostructuresCollaborative Innovation Center of Advanced MicrostructuresJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210000China ZJU-Hangzhou Global Scientific and Technological Innovation Center School of Materials Science and EngineeringZhejiang UniversityHangzhou 311200China Univ Rouen Normandie INSA Rouen NormandieCNRSGPM UMR 6634F-76000 RouenFrance School of Physical Science and technology Ningbo UniversityNingbo 315211China

Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific *** this study,atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO_(2) *** with phosphorous singly doped Si nanocrystals,it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly *** simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy,which also reduces the formation energy of phosphorous in Si *** results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals,which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.

关键词： Si nanocrystals phosphorous and boron co-doping impurity distribution

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Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetai WTe2 Films

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Chinese Physics Letters 2020年第1期37卷 64-68页

作者： Yequan chen Yongda chen Jiai Ning Liming chen Wenzhuo Zhuang Liang He Rong Zhang Yongbing Xu Xuefeng Wang jiangsu provincial key laboratory of Advanced photonic and electronic materials School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093

Topological Weyl semimetal WTe2 with large-scale Him form has a promising prospect for new-generation spintronic ***,it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical *** we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post *** observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 *** nontrivial Berry phase can be revealed by Landau fan diagram *** Hall mobility of WTe2 films can reach 1245cm^2V^-1s^-1 and 1423cm^2V^-1s^-1 for holes and electrons with the carrier density of 5× 10^19 cm^-3 and 2 × 10^19 cm^-3,*** work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.

关键词： quantum nontrivial remove

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Narrowband photonic quantum entanglement with counterpropagating domain engineering

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photonics Research 2021年第10期9卷 1998-2005页

作者： YI-chen LIU DONG-JIE GUO RAN YANG CHANG-WEI SUN JIA-chen DUAN YAN-XIAO GONG ZHENDA XIE SHI-NING ZHU national laboratory of solid state microstructures School of Electronic Science and EngineeringSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China

Narrowband photonic entanglement is a crucial resource for long-distance quantum communication and quantum information processing,including quantum *** demonstrate the first polarization entanglement with 7.1 GHz inherent bandwidth by counterpropagating domain engineering,which is also confirmed by Hong–Ou–Mandel interference with 155-ps base-to-base dip width and(97.1±0.59)%high *** entanglement is harnessed with 18.5-standard-deviations Bell inequality violation,and further characterized with state tomography of(95.71±0.61)%*** narrowband entanglement sets a cornerstone for practical quantum information applications.

关键词： quantum propagating base

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Design strategies for two-dimensional material photodetectors to enhance device performance

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InfoMat 2019年第1期1卷 33-53页

作者： Jun Wang Jiayue Han Xiaoqing chen Xinran Wang School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengduP.R.China state key laboratory of electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengduP.R.China School of Microelectronics Xidian UniversityXianChina national laboratory of solid state microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingChina

Two-dimensional(2D)materials are intensively attractive for fabricating high sensitive photodetectors in terms of atomically thin flexible and ultrafast charge transport *** to their atomically thin body,designing high performance detector requires new physical mechanisms and device *** this review,we classify design strategies and device structures into four categories depending on their physical mechanisms(photovoltaic effect,photoconductive effect,photothermoelectric effect or photobolometric effect,and surface plasma-wave-assisted effect),and summarize the device ***,future prospects and development direction for 2D material photodetectors are *** design strategies descriptions about photoelectronic detector provide a reference for high responsivity and fast response speed photodetector at broadband sensing in the future.

关键词： design strategy heterostructure organic materials photodetectors two-dimensional materials

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High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

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photonics Research 2021年第9期9卷 1683-1688页

作者： YAOZHENG WU BIN LIU FEIFAN XU YIMENG SANG TAO TAO ZILI XIE KE WANG XIANGQIAN XIU PENG chen DUNJUN chen HAI LU RONG ZHANG YOUDOU ZHENG jiangsu provincial key laboratory of Advanced photonic and electronic materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Xiamen University Xiamen 361005China

We fabricated p-i-n tunnel junction(TJ)contacts for hole injection on c-plane green micro-light-emitting diodes(micro-LEDs)by a hybrid growth approach using plasma-assisted molecular beam epitaxy(PA-MBE)and metal–organic chemical vapor deposition(MOCVD).The TJ was formed by an MBE-grown ultra-thin unintentionally doped In Ga N polarization layer and an n^(++)∕n^(+)-GaN layer on the activated p^(++)-Ga N layer prepared by *** hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band *** to standard micro-LEDs,the TJ micro-LEDs showed a reduced device resistance,enhanced electroluminescence intensity,and a reduced efficiency *** size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading *** these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths.

关键词： MOCVD MBE GaN

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Creation and erasure of polar bubble domains in PbTiO_(3)films by mechanical stress and light illuminations

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Journal of Materiomics 2023年第4期9卷 626-633页

作者： Xingchen Zhang Hongying chen Guo Tian Wenda Yang Zhen Fan Zhipeng Hou Deyang chen Min Zeng Minghui Qin Jinwei Gao Xingsen Gao Jun-Ming Liu Guangdong provincial key laboratory of Quantum Engineering and Quantum materials and Institute for Advanced materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China laboratory of solid-state microstructures and Innovation Center of Advanced microstructures Nanjing UniversityNanjing210093China national laboratory of solid state microstructures Department of Materials Science and EngineeringJiangsu Key Laboratory of Artificial Functional MaterialsNanjing UniversityNanjing210093China

The controllable manipulation of polar topological structures(*** bubble)in ferroelectric materials have been considered as a cornerstone for future programmable ***,we present the effective creation and erasure of polar bubble states PbTiO_(3)(PTO)multilayers trigged by mechanical stress and light illumination,*** was found that applying atomic force microscope(AFM)tip force can induced formation of nanoscale bubble domains from the initial monodomain ***,the created bubble domain can be eliminated by exposure to ultraviolet or infrared light *** above results can be understood by modulation of depolarization screening charges and bias fields,as reflected by scanning Kelvin potential microscopic(SKPM)observations,whereby the flexoelectric effect from the tip force tends to remove the screening charges on top surface and modulate the bias field that favors the formation of bubble state while light illumination tends to recover the screen charges and favor the monodomain *** results provide a good example for multi-field manipulation of polar topologies,which might create a new avenue towards the immerging new concept electronic devices.

关键词： Ferroelectric films Polar topologies Piezoresponse force microscopy

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