检索结果-南通市图书馆

Decorating CoSe2 hollow nanospheres on reduced graphene oxide as adlvanced sulfur host material for performance enhanced lithium-sulfur batteries

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2019年第11期12卷 2743-2748页

作者： Liang chen Weiwei Yang Jianguo Liu Yong Zhou Hunan Collaborative Innovation Center of Environmental and Energy Photocatalysis Hunan Key Laboratory of Applied Ervirormental PhotocatalysisChangsha UniversiyChangsha 410022China Collaborative Innovation Center of Advanced microstructures National Laboratory of Solid State MicrotructuresCollege of Engineering and Aplied SciencesNanjing UniversityNanjing 210093China

Although lithium-sulfur batteries are one of promising rechargeable energy storage devices,their wide applications are impeded by the lithium polysulfides shutle effect,low electronic conductivity of the cathode,and sluggish redox reaction kinetics of lithium *** this work,reduced graphene oxide was decorated with CoSe2 hollow nanospheres to form an RGO-CoSe2 composite that was used as a host material to support S in the *** RGO-CoSe2 composite has the following superiorities:(1)enhanced electronic conductity,(2)accommodation of the volumetric change of cathode materials,(3)effective confinement of numerous lithium polysulfides species due to chemisorption,(4)expedition of the redox kinetics of lithium *** expected,the RGO-CoSez-based cathode exhibited the reversible specific capacity of 1,044.7 mAh/g at 0.2C and 695.7 mAh/g at 2C,together with ecellent cycling stability of 0.071% average capacity decay per cycle over 400 cycles at 1C.

关键词： cobalt selenide hollow nanospheres chemisorption lithium-sulfur batteries

Evidence for nematic superconductivity of topological surface states in PbTaSe2

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science Bulletin 2020年第16期65卷 1349-1355,M0003页

作者： Tian Le Yue Sun Hui-Ke Jin Liqiang Che Lichang Yin Jie Li Guiming Pang Chunqiang Xu Lingxiao Zhao Shunichiro Kittaka Toshiro Sakakibara Kazushige Machida Raman Sankar Huiqiu Yuan Genfu chen Xiaofeng Xu Shiyan Li Yi Zhou Xin Lu Center for Correlated Matter and Department of Physics Zhejiang UniversityHangzhou 310058China Department of Physics and Mathematics Aoyama Gakuin UniversitySagamihara 252-5258Japan Department of Physics Zhejiang UniversityHangzhou 310027China Department of Applied Physics Zhejiang University of TechnologyHangzhou 310023China Beijing national laboratory for Condensed Matter Physics&Institute of Physics Chinese Academy of Sciences.Beijing 100190China Institute for solid state Physics(ISSP) The University of TokyoKashiwaChiba 277-8581Japan Department of Physics Ritsumeikan UniversityKusatsuShiga 525-8577Japan Institute of Physics Academia SinicaNankangTaipei 11529TaiwanChina Zhejiang Province key laboratory of Quantum technology and Device Zhejiang UniversityHangzhou 310027China Collaborative Innovation Center of Advanced microstructures Nanjing University.Nanjing 210093China Collaborative Innovation Center of Quantum Matter Beijing 100084China state key laboratory of Surface Physics Department of Physicsand Laboratory of Advanced MaterialsFudan UniversityShanghai 200433China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100J90China

Spontaneous symmetry breaking has been a paradigm to describe the phase transitions in condensed matter *** addition to the continuous electromagnetic gauge symmetry,an unconventional superconductor can break discrete symmetries simultaneously,such as time reversal and lattice rotational *** this work we report a characteristic in-plane 2-fold behaviour of the resistive upper critical field and point-contact spectra on the superconducting semimetal PbTaSe2 with topological nodal-rings,despite its hexagonal lattice symmetry(or D3 h in bulk while C3 v on surface,to be precise).The 2-fold behaviour persists up to its surface upper critical field Hc2R even though bulk superconductivity has been suppressed at its bulk upper critical field Hc2HCelectronic *** addition,we do not observe any lattice rotational symmetry breaking signal from field-angle-dependent specific heat within the *** is worth noting that such surface-only electronic nematicity is in sharp contrast to the observation in the topological superconductor candidate,CuxBi2Se3,where the nematicity occurs in various bulk *** combination with theory,superconducting nematicity is likely to emerge from the topological surface states of PbTaSe2,rather than the proximity *** issue of time reversal symmetry breaking is also ***,our results on PbTaSe2 shed new light on possible routes to realize nematic superconductivity with nontrivial topology.

关键词： Nematic superconductivity Topological surface states Topological superconductor Point-contact spectroscopy

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2022年第1期31卷 618-625页

作者： Zhen-Hua Li Peng-Fei Shao Gen-Jun Shi Yao-Zheng Wu Zheng-Peng Wang Si-Qi Li Dong-Qi Zhang Tao Tao Qing-Jun Xu Zi-Li Xie Jian-Dong Ye Dun-Jun chen Bin Liu Ke Wang You-Dou Zheng Rong Zhang jiangsu provincial key laboratory of Advanced photonic and electronic materials School of Electronic Science and EngineeringNanjing UniversityNanjingChina College of Optoelectronics Engineering Zaozhuang UniversityZaozhuang 277160China Institute of Novel Semiconductors State Key Laboratory of Crystal MaterialShandong UniversityJinan 250100China Xiamen University Xiamen 361005China

A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device *** to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth *** slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence *** growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been *** growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth *** and Si doped GaN were also studied,and both p-and n-type materials were obtained.

关键词： GaN molecular beam epitaxy(MBE) low growth rate growth diagram

Tuning Surface Spin Polarization of CoFeB by Boron Diffusion Detected by Spin Resolved Photoemission

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2023年第8期40卷 86-91页

作者： Qi Liu Xianyang Lu chengrui Fu Jiarui chen Zhe Zhang Yuting Gong Xinyue Wang Yu Yan Qinwu Gao Hui Li Xuezhong Ruan Yao Li Jun Du Jing Wu Liang He Bo Liu Rong Zhang Yongbing Xu jiangsu provincial key laboratory of Advanced photonic and electronic materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China key laboratory for Liquid-solid Structural Evolution and Processing of materials(Ministry of Education) Shandong UniversityJinan 250061China Department of Physics Nanjing UniversityNanjing 210093China York-Nanjing Joint Center(YNJC)for Spintronics and Nano-engineering Department of Electronics and PhysicsUniversity of YorkYork YO105DDUK key laboratory of Spintronics materials Devices and Systems of Zhejiang ProvinceHangzhou 311300China

Research of spin polarization of magnetic CoFeB thin films is of practical importance in spintronic ***,using a direct characterization technique of spin-resolved photoemission spectroscopy,we obtain the surface spin polarization of amorphous Co_(40)Fe_(40)B_(20)thin films with different annealing temperatures from 100℃to 500℃prepared by magnetron *** high annealing temperature,a quasi-semiconductor state is gradually formed at the CoFeB surface due to the boron *** the global magnetization remains almost constant,the secondary electrons’spin polarization,average valence band spin polarization and the spin polarization at Fermi level from spin-resolved photoemission spectroscopy show a general trend of decreasing with the increasing annealing temperature above 100℃.These distinct surface properties are attributed to the enhanced Fe-B bonding due to the boron segregation upon surface after annealing as confirmed by x-ray photoelectron spectroscopy and scanning transmission electron microscopy with energy dispersive *** findings provide insight into the surface spin-resolved electronic structure of the CoFeB thin films,which should be important for development of high-performance magnetic random-access memories.

关键词： spectroscopy annealing boron

Biochemical sensing in graphene-enhanced microfiber resonators with individual molecule sensitivity and selectivity

在线全文

学校读者我要写书评

暂无评论

Light(Science & Applications) 2019年第1期8卷 173-182页

作者： Zhongxu Cao Baicheng Yao chenye Qin Run Yang Yanhong Guo Yufeng Zhang Yu Wu Lei Bi Yuanfu chen Zhenda Xie Gangding Peng Shu-Wei Huang Chee Wei Wong Yunjiang Rao key laboratory of Optical Fiber Sensing and Communications(Education Ministry of China) University of Electronic Science and Technology of ChinaChengdu 611731China state key Lab of electronic Thin Film and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China national laboratory of solid state microstructures and School of electronic Science and Engineering Nanjing UniversityNanjing 210093China School of Electrical Engineering and Telecommunications University of New South WalesSydneyNSW 2052Australia Department of Electrical Computerand Energy EngineeringUniversity of Colorado BoulderBoulderCO 80309USA Fang Lu Mesoscopic Optics and Quantum electronics laboratory University of CaliforniaLos AngelesCA 90095USA Ubiquitous Sensing Center Zhejiang LaboratoryHangzhou 310000China

photonic sensors that are able to detect and track biochemical molecules offer powerful tools for information acquisition in applications ranging from environmental analysis to medical *** ultimate aim of biochemical sensing is to achieve both quantitative sensitivity and *** atomically thick films with remarkable optoelectronic tunability,graphene and its derived materials have shown unique potential as a chemically tunable platform for sensing,thus enabling significant performance enhancement,versatile functionalization and flexible device ***,we demonstrate a partially reduced graphene oxide(prGO)inner-coated and fiber-calibrated Fabry-Perot dye resonator for biochemical *** functionalization in the prGO film enables the intracavity fluorescent resonance energy transfer(FRET)to be chemically selective in the visible ***,by measuring the intermode interference via noise canceled beat notes and locked-in heterodyne detection with Hz-level precision,we achieved individual molecule sensitivity for dopamine,nicotine and single-strand DNA *** work combines atomic-layer nanoscience and high-resolution optoelectronics,providing a way toward high-performance biochemical sensors and systems.

关键词： resonator versatile enable

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

微波光子收/发模块技术

光电子技术 2022年第4期42卷 241-247页

作者：钱广钱坤何晓舟王子彦陈向飞唐杰王琛全顾晓文孔月婵陈堂胜南京电子器件研究所南京210016 微波毫米波单片集成和模块电路重点实验室南京210016 南京大学微结构国家实验室和现代工程与应用科学学院南京210093 空军装备部上海局上海200231

微波光子收/发模块是微波光子系统中实现电光/光电转换等功能的核心部件,在雷达、电子对抗及通信等系统中均具有广泛应用。文章介绍了微波光子收/发模块结构原理和典型产品,论述了微波光子收/发模块未来发展趋势及关键技术。

关键词：微波光子收/发模块光电集成

HfO_(2)铁电薄膜基MFIS存储结构中的高κ介电晶籽层效应研究:铁电正交相生长和界面电荷注入抑制

在线全文

学校读者我要写书评

暂无评论

Science China materials 2023年第1期66卷 219-232页

作者：张岩王岛王佳丽罗春来李明李育珊陶瑞强陈德扬樊贞戴吉岩周国富陆旭兵刘俊明 Institute for Advanced materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong provincial key laboratory of Optical Information materials and technology South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongChina Institute of electronic Paper Displays South China Academy of Advanced Optoelectronics and National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou 510006China laboratory of solid state microstructures and Innovation Center of Advanced microstructures Nanjing UniversityNanjing 210093China

HfO_(2)基材料铁电场效应晶体管(FeFET)商业化应用面临的一个重要挑战是其疲劳特性差.本文提出,在基于金属-铁电-绝缘层-半导体(MFIS)栅叠层结构的FeFET中研发合适的高κ界面晶籽层(SL)以大幅度提升其疲劳性能.我们在ZrO_(2),HfO_(2),(H... 详细信息

HfO_(2)基材料铁电场效应晶体管(FeFET)商业化应用面临的一个重要挑战是其疲劳特性差.本文提出,在基于金属-铁电-绝缘层-半导体(MFIS)栅叠层结构的FeFET中研发合适的高κ界面晶籽层(SL)以大幅度提升其疲劳性能.我们在ZrO_(2),HfO_(2),(HfO_(2))0.75(Al_(2)O_(3))0.25(HAO)和Al_(2)O_(3)等典型的高κ介电SL上制备了Hf_(0.5)Zr_(0.5)O_(2)(HZO)铁电薄膜,系统研究了HZO薄膜的微观结构、铁电性及其MFIS器件的存储特性.首先,揭示了HZO薄膜中铁电正交相的形核和生长不仅受高κ介电SL表面能的影响,而且其微观结构对HZO中正交相的形成也起到重要作用.其次,澄清了高κ介电晶籽层对MFIS结构存储特性的影响,通过精确计算的MFIS结构的界面层电场,对MFIS结构的存储特性做出了合理解释.最后,基于HAO的高κSL的MFIS器件实现了铁电极化和界面电荷注入之间的合理优化,并且获得了较大铁电存储窗口(>1.0 V),出色的保持特性(>1.6×104s)和疲劳特性(>105).本文为未来解决HfO_(2)基Fe FET的疲劳问题提供了有价值的思路,为在介电SL上生长HfO_(2)铁电薄膜的其他高性能电子器件的开发提供了参考.

关键词：存储特性存储结构铁电薄膜商业化应用 MFIS 铁电存储疲劳特性叠层结构

具有大电导动态范围和多级电导态的铁电Hf_(0.5)Zr_(0.5)O_(2)栅控突触晶体管

在线全文

学校读者我要写书评

暂无评论

Science China materials 2023年第6期66卷 2372-2382页

作者：罗春来张岩帅文韬贺可心李明陶瑞强陈德扬樊贞张斌周小元戴吉岩周国富陆旭兵刘俊明 Institute for Advanced materials Guangdong Provincial Key Laboratory of Optical Information Materials and TechnologySouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China College of Physics and Analytical and Testing Center Chongqing UniversityChongqing 401331China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongChina Guangdong provincial key laboratory of Optical Information materials and technology and Institute of electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China laboratory of solid state microstructures and Innovation Center of Advanced microstructures Nanjing UniversityNanjing 210093China

得益于铁电材料的非易失性和快速擦写,铁电突触晶体管(FST)在神经形态计算应用中很有前景.然而,在低能耗下同时实现大电导动态范围(G_(max)/G_(min))和多级有效电导态仍是一个挑战.在此,本文首次提出了由铁电Hf_(0.5)Zr_(0.5)O_(2)(HZO... 详细信息

得益于铁电材料的非易失性和快速擦写,铁电突触晶体管(FST)在神经形态计算应用中很有前景.然而,在低能耗下同时实现大电导动态范围(G_(max)/G_(min))和多级有效电导态仍是一个挑战.在此,本文首次提出了由铁电Hf_(0.5)Zr_(0.5)O_(2)(HZO)栅介质结合溶液处理的氧化铟(In_(2)O_(3))突触晶体管以解决上述问题.通过精细调控的铁电相以及对铁电体和铁电/半导体界面的电荷注入良好抑制,实现了优异的突触特性.在每个尖峰事件490 fJ的低能耗下,该FST成功模拟了高达101个有效电导状态的长时程增强/抑制(LTP/D),且具有大电导动态范围(G_(max)/G_(min)=32.2)和优异耐久性(>1000个循环).此外,模拟实现了96.5%的手写数字识别准确率,这是现有报道的FST的最高记录.这项工作为开发低成本、高性能和节能的铁电突触晶体管提供了一条新途径.

关键词：动态范围半导体界面电荷注入栅介质氧化铟非易失性铁电材料电突触