检索结果-南通市图书馆

第十二届全国实验力学学术会议

作者： Ingolf Mueller Giulia Lanzara Nagesh Janapala Kuldeep Lonkar amrita mittal Cecilia Larrosa Surajit Roy Nathan Salowitz Kyunglok Kim Stanford University

The proposed presentation summarizes the current in progress researches in Stanford Structures and Composites Laboratory(SACL).

关键词： structural health monitoring diagnostic prognostic crashworthiness Stretchable

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Design and Analysis of Graphene Based Tunnel Field Effect Transistor with Various Ambipolar Reducing Techniques

引用

Computers, Materials & Continua 2023年第7期76卷 1309-1320页

作者： Puneet Kumar Mishra amrita Rai Nitin Sharma Kanika Sharma Nitin mittal Mohd Anul Haq Ilyas Khan ElSayed M.Tag El Din Department of Electronics and Communication Engineering G L Bajaj Institute of Technology and ManegmentGretear NoidaIndia Department of Electronics and Communication Engineering Chandigarh UnievrsityMohaliPunjabIndia Department of Electronics and Communication Engineering NITTTRChandigarhIndia University Center of Research&Development Chandigarh UniversityMohali121102India Department of Computer Science College of Computer and Information SciencesMajmaah UniversityAl-Majmaah11952Saudi Arabia Department of Mathematics College of Science Al-ZulfiMajmaah University11952Al-MajmaahSaudi Arabia Electrical Engineering Department Faculty of Engineering&TechnologyFuture University in EgyptNew Cairo11835Egypt

The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research *** impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm *** modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.

关键词： Graphene tunnel field effect transistor(TFET) band to band tunnelling subthreshold swing

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：