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Comparison of High Field Electron Transport in GaAs,InAs and In_(0.3)Ga_(0.7)As

Journal of Modern Physics 2013年第4期4卷 121-126页

作者： B.bouazza a.guen.bouazza C.Sayah N.E.Chabane-Sari Unite de Recherches Matériaux et Energies Renouvelables Facultédes Sciences de l’IngénieurUniversite Abou-Bekr-Belkaid de TlemcenTlemcenAlgérie

An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk GaAs, InAs and In0.3Ga0.7As. In particular, velocity overshoot and electron transit times are examined. We find the steady state velocity of the electrons is the most important factor determining transit time over distances longer then 0.2 μm. Over shorter distances velocity overshoot effects in InAs and In0.3Ga0.7 As at high fields are comparable to those in GaAs. We estimate the minimum transit time across a 1 μm InAs sample to be about 4.2 ps. Similar calculations for In0.3Ga0.7As yield 6 ps (for GaAs yield 10 ps). Calculations are made using a nonparabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models.

关键词： Monte Carlo Method Semiconductor Devices Velocity Overshoot Electron Transport

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Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis

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Journal of Modern Physics 2013年第5期4卷 616-621页

作者： A. guen-bouazza C. Sayah B. bouazza N. E. Chabane-Sari Research Unit of Materials and Renewable Energies Faculty of Technology University of Tlemcen Tlemcen Algeria

An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 3 kV/cm for InAs, 10 kV/cm for InP and 5 kV/cm for the case of GaAs, We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm InAs sample to be about 2 ps. Similar calculations for InP and GaAs yield 6.6 and 5.4 ps, respectively. We find that the optimal cutoff frequency for an ideal InAs based device ranges from around 79 GHz when the device thickness is set to 1 μm. We thus suggest that indium arsenide offers great promise for future high-speed device applications. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

关键词： Electron Transport Simulation Monte Carlo Simulation Velocity Overshoot Materials

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