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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU qinghai zhu Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

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Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe_(2) on SOI

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Nano Research 2023年第5期16卷 7559-7567页

作者： Yexin Chen qinghai zhu Xiaodong zhu Yijun Sun Zhiyuan Cheng Jing Xu Mingsheng Xu School of Micro-Nano Electronics State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China College of Information Science&Electronic Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Ocean Observation-Imaging Testbed of Zhejiang Province Ocean CollegeZhejiang UniversityZhoushan 316021China

Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent ***,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μ*** PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate *** responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm ***,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel *** architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.

关键词： two-dimensional PtSe_(2) silicon-on-insulator(SOI) heterojunction phototransistor gate voltage modulation

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High performance IEICO-4F/WSe_(2)heterojunction photodetector based on photoluminescence quenching behavior

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Nano Research 2022年第9期15卷 8595-8602页

作者： qinghai zhu Yexin Chen Tianyi Chen Lijian Zuo Yijun Sun Rong Wang Mingsheng Xu School of Micro-Nano Electronics State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Department of Polymer Science and Engineering State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China College of Information Science&Electronic Engineering Zhejiang University38 Zheda RoadHangzhou 310027China ZJU Hangzhou Global Sci&Technol Innovation Centre Adv Semiconductor Research InstituteHangzhou 311215China

Heterostructure is the basic building block for functional optoelectronic *** consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attracting great interest for highperformance ***,how to design heterostructure for highly efficient optoelectronic devices remains a big *** we design high-performance organic semiconductor/WSe_(2)heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IEICO-4F)organic semiconductors with various thicknesses and monolayer WSe_(2).With the increase of IEICO-4F layer thickness,the photoluminescence(PL)characteristics of WSe_(2)could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital(LUMO)level of IEICO-4F to the conduction band minimum(CBM)of WSe_(2).Benefiting from the exquisite charge transfer behavior,the IEICO-4F/WSe_(2)heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65×10^(11)Jones at incident light of 808 *** work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe_(2)heterojunction,thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures.

关键词： tungsten diselenide organic semiconductor type-II heterojunction photoluminescence quenching photodetector

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Clinical management of primary odontogenic sarcoma in the mandible:a case report after WHO nomination

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The Journal of Biomedical Research 2022年第1期36卷 68-72页

作者： qinghai zhu Chenxing Wang Yizhou Wang Songsong Guo Jinhai Ye Jiangsu Key Laboratory of Oral Diseases Nanjing Medical UniversityNanjingJiangsu 210029China Depatment of Oral and Maxillofacial Surgery the Affiliated Stomatological Hospital of Nanjing Medical UniversityNanjingJiangsu 210029China

Ameloblastic fibro-odontosarcoma(AFOS)now designated as odontogenic sarcoma is an extremely rare odontogenic tumor,which histologically presents as a biphasic neoplasm with a malignant mesenchymal component plus ameloblastic *** we report a 27-year-old Chinese female with the complaint of a painful swelling for half a month in the right mandible.A segmental mandibulectomy,with an immediate mandibular reconstruction using a free vascularized osteocutaneous fibular flap was performed using surgical guide *** analysis revealed a primary odontogenic *** postoperative period was uneventful,and no clinical indication of recurrence or metastasis was observed during the 3-year *** adjuvant therapy was *** is the first odontogenic sarcoma case reported in China after the new World Health Organization classification of odontogenic lesions.

关键词： odontogenic sarcoma ameloblastic fibrosarcoma ameloblastic fibro-odontosarcoma mandibular reconstruction

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Microstructure and wear resistance of Fe-based and Co-based coating of AISI H13

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China Welding 2019年第3期28卷 54-60页

作者： Yun Xiao Wang Jing zhu qinghai Chen Zhikai He Bing Jiangsu XCMG Construction Machinery Research Institute Co.Ltd Xuzhou 221004China State Key Laboratory of Intelligent Manufacturing of Advanced Construction Machinery Xuzhou 221004China

Fe-based and Co-based cladding layers were prepared on the surface of AISI H13 hot die steel by laser cladding *** microstructure,hardness and abrasion resistance of the two cladding layers were studied by means of optical microscope,scanning electron microscope,rockwell hardness tester,and high temperature friction and wear ***,the red hardness of the cladding layers was measured,after holding the layers at 600℃ for 1 hour by muffle furnace and repeated 4 *** rockwell hardness values of the substrate,the Fe-based and the Co-based alloy coating measured were HRC 47,HRC 52 and HRC 48,*** red hardness values of the substrate and the Fe-based cladding layer were decreased,while that of the Co-based cladding layer was *** Co-based cladding layer has the minimal wear loss weight and friction coefficient among *** wear mechanisms of the substrate,the Fe-based layer and the Cobased layer attribute mainly to abrasive wear,adhesion wear,and both of them,respectively.

关键词： laser cladding AISI H13 Co-based coating red hardness high temperature wear

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试论伊丽莎白一世的婚姻外交

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史学理论研究 2008年第1期 78-88,159页

作者：朱青海温州大学人文学院讲师讲师325035

伊丽莎白一世是英国都铎王朝的末代君主,本文对其在位期间闻名于世的婚姻外交进行了系统的论述。文章由五部分构成:第一部分阐述伊丽莎白一世时期英国的经济政治总体形势,此为其婚姻外交的坚实之根基;第二部分阐述伊丽莎白一世时期英国... 详细信息

伊丽莎白一世是英国都铎王朝的末代君主,本文对其在位期间闻名于世的婚姻外交进行了系统的论述。文章由五部分构成:第一部分阐述伊丽莎白一世时期英国的经济政治总体形势,此为其婚姻外交的坚实之根基;第二部分阐述伊丽莎白一世时期英国所处的国际地位和背景及外交政策总体目标,此为女王开展婚姻外交的直接动因;第三部分分析伊丽莎白一世的个人素质和独特经历,此构成为女王婚姻外交的必要先决条件;第四部分论述女王婚姻外交的辉煌成果;最后部分总体评价女王婚姻外交之得失作为文章的收尾。本文试图阐明:女王的婚姻外交之实施本质上符合其外交政策总目标,有其历史的必然性及其不朽意义。

关键词：英国史伊丽莎白一世婚姻外交

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氟康唑局部应用治疗真菌性角膜溃疡

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中国新药与临床杂志 2003年第1期22卷 58-60页

作者：岳秀珠青海红十字医院青海西宁810000

目的 :探讨氟康唑局部应用治疗真菌性角膜溃疡的疗效。方法 :对 2 6例 [男性 18例 ,女性 8例 ,年龄 (44±s 10 )a ,2 1～ 5 6a]真菌性角膜溃疡病人 ,应用 0 .2 %氟康唑静脉注射液行球结膜下注射 ,0 .5mL ,qd ,5d一个疗程。第 2疗程根据... 详细信息

目的 :探讨氟康唑局部应用治疗真菌性角膜溃疡的疗效。方法 :对 2 6例 [男性 18例 ,女性 8例 ,年龄 (44±s 10 )a ,2 1～ 5 6a]真菌性角膜溃疡病人 ,应用 0 .2 %氟康唑静脉注射液行球结膜下注射 ,0 .5mL ,qd ,5d一个疗程。第 2疗程根据病情 2d或 3d球结膜下注射 1次 ,每次 0 .5mL ,并用该药滴眼 ,2h 1次 ,每次 1滴 (每滴 0 .0 5mL)。结果 :治愈 2 4例 ,有效 2例。结论

关键词：氟康唑局部应用治疗真菌性角膜溃疡

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社会资本对农户秸秆处置亲环境行为的影响研究——基于湖北省L县农户的调查数据

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干旱区资源与环境 2018年第11期32卷 15-21页

作者：朱清海雷云华中农业大学马克思主义学院武汉430070

文中利用湖北省L县农户调查数据,选择Binary Logistic模型,研究了社会资本对农户秸秆处置亲环境行为的影响,结果表明:1)农户的秸秆处置行为具有相互模仿和相互学习的现象,禁烧秸秆的法律规章制度对农户的行为具有一定的约束作用,但是,... 详细信息

文中利用湖北省L县农户调查数据,选择Binary Logistic模型,研究了社会资本对农户秸秆处置亲环境行为的影响,结果表明:1)农户的秸秆处置行为具有相互模仿和相互学习的现象,禁烧秸秆的法律规章制度对农户的行为具有一定的约束作用,但是,农户的人际信任水平相对偏低,导致秸秆治理中的集体合作意愿不强。2)社会资本对农户秸秆处置的亲环境行为有显著的正向影响,社会网络规模越大、社会规范水平越高、社会信任水平越高的农户选择秸秆资源综合化利用和出售的可能性越大,选择秸秆焚烧和露天废弃的可能性越小。3)农户的文化程度、家庭是否从事养殖业、家庭附近是否有秸秆收购点等因素对农户秸秆处置亲环境行为有显著的正向影响。

关键词：社会资本秸秆处置农户行为

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低碳环保:西方农业食品文化运动的新理念

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生态经济 2012年第9期28卷 39-41,172页

作者：朱清海华中农业大学文法学院湖北武汉430070

面对食品安全、环境污染、全球气候变化与不平等,西方发达国家在农业食品领域里兴起了一轮新的文化运动,主要包括社区支持农业运动、食品里程、公平贸易运动,不仅确保了食品安全、促进了区域经济发展、维护了世界公平正义,而且对全球环... 详细信息

面对食品安全、环境污染、全球气候变化与不平等,西方发达国家在农业食品领域里兴起了一轮新的文化运动,主要包括社区支持农业运动、食品里程、公平贸易运动,不仅确保了食品安全、促进了区域经济发展、维护了世界公平正义,而且对全球环境改善产生了深远的影响。

关键词：社区支持农业公平贸易食品里程

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一种基于八叉树车载激光点云的杆式地物批量提取方法

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测绘通报 2019年第S2期 110-111,116页

作者：朱清海重庆市勘测院

近年来,三维激光扫描技术广泛应用于逆向工程、文物数字化、工程测量等多个领域。在工程测量领域的应用也越来越广泛,采集平台日趋多样化,从固定的地面站扫描到移动的车载扫描、背包式扫描,从地面的小区域扫描到机载的大场景扫描,逐步... 详细信息

近年来,三维激光扫描技术广泛应用于逆向工程、文物数字化、工程测量等多个领域。在工程测量领域的应用也越来越广泛,采集平台日趋多样化,从固定的地面站扫描到移动的车载扫描、背包式扫描,从地面的小区域扫描到机载的大场景扫描,逐步形成了空地一体全方位,室内室外多角度的数据采集综合数据采集平台。扫描成果广泛应用于土石方验方、建筑立面测绘、文物修缮测绘、建筑竣工测绘、市政工程竣工测绘中。但在矢量要素提取方面,自动化水平仍然不高,本文结合生产实际设计研发了一种基于八叉树点云的杆式地物批量提取算法。

关键词：点云八叉树杆式地物提取

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