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Experimental evidence of anomalously large superconducting gap on topological surface state of b-Bi2Pd film

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Science Bulletin 2019年第17期64卷 1215-1221页

作者： Jian-Yu Guan Lingyuan Kong Li-Qin Zhou Yi-Gui Zhong Hang Li Hai-Jiang Liu Cen-Yao Tang Da-Yu Yan fa-zhi yang Yao-Bo Huang You-Guo Shi Tian Qian Hong-Ming Weng Yu-Jie Sun Hong Ding Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China School o f Physics University of Chinese Academy of Sciences Beijing 100190 China Shanghai Synchrotron Radiation facility Shanghai Institute o f Applied Physics Chinese Academy of Sciences Shanghai 201204 China CAS Center for Excellence in Topological Quantum Computation University o f Chinese Academy of Sciences Beijing 100190 China Songshan Lake Materials Laboratory Dongguan 523808 China

Connate topological superconductor(TSC) combines topological surface states with nodeless superconductivity in a single material, achieving effective p-wave pairing without interface complication. By combining angle-resolved photoemission spectroscopy and in-situ molecular beam epitaxy, we studied the momentum-resolved superconductivity in b-Bi2 Pd film. We found that the superconducting gap of topological surface state(DTSS$ 3.8 meV) is anomalously enhanced from its bulk value(Db$ 0.8 meV). The ratio of 2 DTSS/kBTc$ 16.3, is substantially larger than the BCS value. By measuring b-Bi2 Pd bulk single crystal as a comparison, we clearly observed the upward-shift of chemical potential in the film. In addition, a concomitant increasing of surface weight on the topological surface state was revealed by our first principle calculation, suggesting that the Dirac-fermion-mediated parity mixing may cause this anomalous superconducting enhancement. Our results establish b-Bi2 Pd film as a unique case of connate TSCs with a highly enhanced topological superconducting gap, which may stabilize Majorana zero modes at a higher temperature.

关键词： Topological surface state Multiband superconductivity Thin film Photoemission spectroscopy

Continuously Doping Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)into Electron-Doped Superconductor by CaH_(2)Annealing Method

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Chinese Physics Letters 2022年第7期39卷 93-97页

作者： Jin Zhao Yu-Lin Gan Guang yang Yi-Gui Zhong Cen-Yao Tang fa-zhi yang Giao Ngoc Phan Qiang-Tao Sui Zhong Liu Gang Li Xiang-Gang Qiu Qing-Hua Zhang Jie Shen Tian Qian Li Lu Lei Yan Gen-Da Gu Hong Ding Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physics University of Chinese Academy of SciencesBeijing 100190China Institute for Solid State Physics University of TokyoChiba 277-8581Japan Songshan Lake Materials Laboratory Dongguan 523808China Condensed Matter Physics and Materials Science Department Brookhaven National LaboratoryUptonNew York 11973USA

As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen *** doping methods can regulate its doping level within the range of hole *** we report the first application of CaH_(2)annealing method in regulating the doping level of *** continuously controlling the anneal time,a series of differently doped samples can be *** combined experimental results of x-ray diffraction,scanning transmission electron microscopy,resistance and Hall measurements demonstrate that the CaH_(2)induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range,even switching from hole doping to electron *** also found evidence of a low-T_c superconducting phase in the electron doping side.

关键词： into Electron-Doped Superconductor by CaH_(2)Annealing Method Continuously Doping Bi_(2)Sr_(2)CaCu_(2)O

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有机聚合物薄膜中的横向效应与准晶结构

物理学报 2000年第6期49卷 1091-1093页

作者：徐则达蔡志岗张灵志刘焰发杨杰佘卫龙周建英中山大学超快激光光谱国家重点实验室广州510275

报道了偶氮苯聚合物薄膜中的斑图形成 ,横向效应及准晶结构 .用简并四波混频实验手段 ,通过扫描电子显微镜和偏光显微镜观察发现有机薄膜中有许多小岛形成的斑图并形成准晶结构 .实验证明通过写入光偏振态的适当组合可以控制有机薄膜中... 详细信息

报道了偶氮苯聚合物薄膜中的斑图形成 ,横向效应及准晶结构 .用简并四波混频实验手段 ,通过扫描电子显微镜和偏光显微镜观察发现有机薄膜中有许多小岛形成的斑图并形成准晶结构 .实验证明通过写入光偏振态的适当组合可以控制有机薄膜中斑图结构 .为有机薄膜的纳米结构技术开创了一条新路 .

关键词：有机聚合物薄膜横向效应准晶结构

Cerebral fat embolism following autologous fat injection in facial reconstruction:A case report

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World Journal of Clinical Cases 2025年第2期13卷 50-58页

作者： Xiu-Ying Chen fa Shen Chang Cheng Yu-Han Wang Wen-Chao Cheng De-zhi Yuan Wen Huang Department of Neurology Chongqing Emergency Medical CenterChongqing University Central HospitalChongqing 400000China Department of Neurology Xinqiao HospitalThe Army Medical University(Third Military Medical University)Chongqing 400000China

BACKGROUND Autologous fat injection in facial reconstruction is a common cosmetic *** cerebral fat embolism(CFE)as a complication is rare,it carries serious health *** SUMMARY We present a case of a 29-year-old female patient who developed acute CFE following facial fat filling *** the surgery,the patient experienced symptoms including headache,nausea,vomiting,and difficulty breathing,which was followed by neurological symptoms such as slurred speech and left-sided *** physical examination and auxiliary investigations,including blood tests,head and neck computed tomography angiography,and cranial magnetic resonance diffusion-weighted imaging,were performed upon *** clinical diagnosis was acute cerebral embolism following facial fat filling *** included measures to improve cerebral circulation,dehydration for intracranial pressure reduction,nutritional support,and rehabilitation therapy for left limb *** patient showed a significant improvement in symptoms after 2 weeks of *** recovered left limb muscle strength to grade 5,had clear speech,and experienced complete relief of *** Our case highlights the potential occurrence of severe complications in patients undergoing fat injection in facial *** prevent these complications,plastic surgeons should enhance their professional knowledge and skills.

关键词： Cerebral fat embolism Mechanical thrombectomy Thrombolysis Steroid therapy Symptomatic treatment Case report

基于PLUS与InVEST模型的新疆碳储量变化及预测

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环境科学 2025年第1期46卷 378-387页

作者：杨顺法昝梅袁瑞联陈治中孔晶晶薛聪周佳翟莉莉新疆师范大学地理科学与旅游学院乌鲁木齐830054 新疆干旱区湖泊环境与资源重点实验室乌鲁木齐830054

土地利用变化是造成陆地生态系统碳储量变化的主要原因,研究干旱区不同土地利用类型碳储量变化的影响机制,模拟未来不同情景下土地利用和碳储量的变化,有助于为干旱区制定科学的土地利用政策从而推动该区域高质量可持续的发展.基于2000~... 详细信息

土地利用变化是造成陆地生态系统碳储量变化的主要原因,研究干旱区不同土地利用类型碳储量变化的影响机制,模拟未来不同情景下土地利用和碳储量的变化,有助于为干旱区制定科学的土地利用政策从而推动该区域高质量可持续的发展.基于2000~2020年新疆土地利用数据,耦合PLUS-InVEST模型分析了2000~2020年新疆土地利用和碳储量的时空变化特征,并预测了自然发展(Z1)、经济发展(Z2)、可持续发展(Z3)、耕地保护发展(Z4)和生态保护发展情景(Z5)下的2030年新疆土地利用和碳储量变化.结果表明:①2000~2020年间,新疆碳储量总值呈现出先减少后增加的总体减少趋势,共减少4.2682×108 t,草地大量退化成未利用地是新疆碳储量减少的主要原因.②不同土地利用类型碳储量变化贡献率分析表明,耕地、林地、草地、水域和未利用地碳储量变化主要影响因素为自然因素,建设用地碳储量变化主要影响因素为人文经济因素.新疆碳储量变化的原因是自然和人文经济因素共同影响的结果.③与2020年相比,新疆2030年5种发展情景下碳储量都保持增加趋势,其中可持续发展情景(Z3)下碳储量增加值最多为66.7236×106 t,该发展情景是未来提高新疆碳储量保证经济发展最优的模式.以上研究结果可以为新疆未来国土空间规划和实现“碳中和”目标提供理论依据.

关键词：土地利用碳储量 PLUS-InVEST模型新疆贡献率分析

Two-direction refinable functions and twodirection wavelets with high approximation order and regularity

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Science China Mathematics 2007年第12期50卷 1687-1704页

作者： Shou-zhi yang You-fa LI Department of Mathematics Shantou University Shantou 515063 China Department of Mathematics Shantou University Shantou 515063 China

The concept of two-direction refinable functions and two-direction wavelets is *** investigate the existence of distributional(or L2-stable) solutions of the two-direction refinement equation: φ(x)=∑p+kφ(mx-k)+∑p-kφ(k-mx) where m ≥ 2 is an integer. Based on the positive mask {pk+} and negative mask {p-k}, the conditions that guarantee the above equation has compactly distributional solutions or L2-stable solutions are established. Furthermore, the condition that the L2-stable solution of the above equation can generate a two-direction MRA is given. The support interval of φ(x) is discussed amply. The definition of orthogonal two-direction refinable function and orthogonal two-direction wavelets is presented, and the orthogonality criteria for two-direction refinable functions are established. An algorithm for constructing orthogonal two-direction refinable functions and their two-direction wavelets is presented. Another construction algorithm for two-direction L2-refinable functions, which have nonnegative symbol masks and possess high approximation order and regularity, is presented. Finally, two construction examples are given.

关键词： two-direction reflnable functions two-direction wavelets orthogonality approximation order regularity

Same-Sign Dilepton Signature in the Inert Doublet Model

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Chinese Physics C 2021年第7期45卷 183-194页

作者： fa-Xin yang zhi-Long Han Yi Jin School of Physics and Technology University of JinanShandong 250022China

In this study,we perform a detailed analysis on the same-sign dilepton signature in the inert doublet *** on the low dark matter mass region,we randomly scan the corresponding parameter *** samples allowed by various constraints are obtained,and among them are twenty benchmark points that are selected for further study on collider *** hadron colliders,the same-sign dilepton signature is produced via pp→W^(±+)+W^(±+)jj→H^(±)H^(±)jj with the leptonic decay mode H^(±)→HW^(±)(→l^(±)ν),where H represents the dark matter *** investigate the testability of this signal at the high-luminosity LHC(HL-LHC)and the proposed 27 TeV high-energy LHC(HE-LHC).According to our simulation,the HL-LHC with L=3 ab^(-1)can barely probe this ***,for the HE-LHC with L=15ab^(-1),it is promising to obtain a 5σsignificance when 250 GeV≤m__(H)^(±)-m_(H)≤300 GeV with dark matter mass m_(H)60 or 71 GeV.

关键词： dark matter inert doublet model same-sign dilepton signature LHC

Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology

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Journal of Zhejiang University-Science C(Computers and Electronics) 2013年第4期14卷 288-295页

作者： Ge-liang yang zhi-gong WANG zhi-qun LI Qin LI fa-en LIU Zhu LI Engineering Research Center of RF-ICs and RF-Systems Ministry of EducationSoutheast University

A Ka-band sub-harmonically pumped resistive mixer （SHPRM） was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor （CMOS） technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance （balun） with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation （LO） signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of -15- -12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency （RF） bandwidth of 28 35 GHz. The in-band LO-intermediate freqency （IF）, RF-IF, and LO-RF isolations are better than 31, 34, and 36 dB, respectively. Besides, the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB, respectively. The measured input referred PIdB and 3rd-order inter-modulation intercept point （IIP3） are 0.5 and 10.5 dBm, respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm^2 including pads.

关键词： Complementary metal-oxide-semiconductor (CMOS) Sub-harmonically pumped resistive mixer (SHPRM) Mar-chand balance-to-unbalance (balun) Millimeter wave (MMW) Monolithic microwave integrated circuit (MMIC)

A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology

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Journal of Zhejiang University-Science C(Computers and Electronics) 2014年第12期15卷 1183-1189页

作者： fa-en LIU zhi-gong WANG zhi-qun LI Qin LI Lu TANG Ge-liang yang Institute of RF- & OE-ICs Southeast University

We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 d Bm. The power consumption is 2.88 m W under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.

关键词： CMOS Injection-locked frequency divider(ILFD) Millimeter wave Wide locking range Monolithic microwave integrated circuit(MMIC)