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Development of in situ characterization techniques in molecular beam epitaxy

Journal of Semiconductors 2024年第3期45卷 9-32页

作者： Chao Shen Wenkang Zhan Manyang Li Zhenyu Sun Jian Tang Zhaofeng Wu Chi Xu Bo Xu Chao Zhao zhanguo wang Laboratory of Solid State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101804China School of Physics Science and Technology Xinjiang UniversityUrumqi 830046China School of New Energy and Electronics Yancheng Teachers UniversityYancheng 224002China Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques.These techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled properties.By combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive applications.This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research.In addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

关键词： epitaxial growth thin film in situ characterization molecular beam epitaxy(MBE)

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Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis

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Journal of Semiconductors 2022年第2期43卷 24-34页

作者： Chao Li Jie Li Yanbin Huang Jun Liu Mengmeng Ma Kong Liu Chao Zhao Zhijie wang Shengchun Qu Lei Zhang Haiyan Han Wenshuang Deng zhanguo wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Mechanical and Electrical Engineering Handan UniversityHandan 056005China School of Mathematical Science and Engineering Hebei University of EngineeringHandan 056038China

The utilization of solar energy to drive energy conversion and simultaneously realize pollutant degradation via pho-tocatalysis is one of most promising strategies to resolve the global energy and environment issues.During the past decade,graphite carbon nitride(g-C3N4)has attracted dramatically growing attention for solar energy conversion due to its excellent physicochemical properties as a photocatalyst.However,its practical application is still impeded by several limitations and short-comings,such as high recombination rate of charge carriers,low visible-light absorption,etc.As an effective solution,the elec-tronic structure tuning of g-C_(3)N_(4)has been widely adopted.In this context,firstly,the paper critically focuses on the different strategies of electronic structure tuning of g-C_(3)N_(4)like vacancy modification,doping,crystallinity modulation and synthesis of a new molecular structure.And the recent progress is reviewed.Finally,the challenges and future trends are summarized.

关键词： g-C_(3)N_(4) photocatalyst electronic structure

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Efficacy and safety of flurbiprofen cataplasms versus loxoprofen sodium cataplasms in knee osteoarthritis:a randomized controlled trial

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Chinese Medical Journal 2023年第18期136卷 2187-2194页

作者： Dong Li Yinchu Cheng Ping Yuan Ziyang Wu Jiabang Liu Jinfu Kan Kun Zhang zhanguo wang Hui Zhang Guangwu Zhang Tao Xue Junxiu Jia Suodi Zhai Zhenpeng Guan Department of Orthopedic Peking University Shougang HospitalBeijing 100144China Department of Pharmacy Peking University Third HospitalBeijing 100191China

Background:Clinical trial evidence is limited to identify better topical non-steroidal anti-inflammatory drugs(NSAIDs)for treating knee osteoarthritis(OA).We aimed to compare the clinical efficacy and safety of flurbiprofen cataplasms(FPC)with loxoprofen sodium cataplasms(LSC)in treating patients with knee OA.Methods:This is an open-label,non-inferiority randomized controlled trial conducted at Peking University Shougang Hospital.Overall,250 patients with knee OA admitted from October 2021 to April 2022 were randomly assigned to FPC and LSC treatment groups in a 1:1 ratio.Both medications were administered to patients for 28 days.The primary outcome was the change of pain measured by visual analog scale(VAS)score from baseline to day 28(range,0-10 points;higher score indicates worse pain;non-inferiority margin:1 point;superiority margin:0 point).There were four secondary outcomes,including the extent of pain relief,the change trends of VAS scores,joint function scores measured by the Western Ontario and McMaster University Osteoarthritis Index(WOMAC),and adverse events.Results:Among 250 randomized patients(One patient without complete baseline record in the flurbiprofen cataplasms was excluded;age,62.8±10.5 years;61.4%[153/249]women),234(93.6%)finally completed the trial.In the intention-to-treat analysis,the decline of the VAS score for the 24-h most intense pain in the FPC group was non-inferior,and also superior to that in the LSC group(differences and 95%confidence interval,0.414(0.147-0.681);P<0.001 for non-inferiority;P=0.001 for superiority).Similar results were observed of the VAS scores for the current pain and pain during exercise.WOMAC scores were also lower in the FPC group at week 4(12.50[8.00-22.50]vs.16.00[11.00-27.00],P=0.010),mainly driven by the dimension of daily activity difficulty.In addition,the FPC group experienced a significantly lower incidence of adverse events(5.6%[7/124]vs.33.6%[42/125],P<0.001),including irritation,rash and pain of the skin,and sticky hair uncovering pain.Conclusions

关键词： Knee osteoarthritis Flurbiprofen cataplasms Loxoprofen cataplasms Knee joint function Pain Randomized control trial

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Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires

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Journal of University of Science and Technology Beijing 2007年第4期14卷 341-344页

作者： Yuanli wang Hua Cui Wen Lei Yahong Su Yonghai Chen Ju Wu zhanguo wang Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Materials Science and Engineering School University of Science and Technology Beijing Beijing 100083 China China Metallurgical Information and Standardization Research Institute Beijing 100730 China

The influence of InAs deposition thickness on the structural and optical properties of InAs/InA1As quantum wires （QWR） superlattices （SLS） was studied. The transmission electron microscopy （TEM） results show that with increasing the InAs deposited thickness, the size uniformity and spatial ordering of InAs QWR SLS was greatly improved, but threading dislocations initiated from InAs nanowires for the sample with 6 monolayers （MLs） InAs deposition. In addition, the zig-zag features along the extending direc- tion and lateral interlink of InAs nanowires were also observed. The InAs nanowires, especially for the first period, were laterally compact. These structural features may result in easy tunneling and coupling of charge carders between InAs nanowires and will hamper their device applications to some extent. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs, and for suppressing the formation of the threading dislocations in InAs QWR SLS.

关键词： quantum wire molecular beam epitaxy optical properties nanostructures transmission electron microscope

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Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

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Journal of Semiconductors 2022年第1期43卷 37-43页

作者： Tianyi Tang Tian Yu Guanqing Yang Jiaqian Sun Wenkang Zhan Bo Xu Chao Zhao zhanguo wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of ScienceBeijing 101804China

InAs/GaAs quantum dot(QD)lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy(MBE)system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm^(2) at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.

关键词： semiconductor laser molecular beam epitaxy quantum dots III-V on Si silicon photonics

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Boron-doped Ⅲ–Ⅴ semiconductors for Si-based optoelectronic devices

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Journal of Semiconductors 2020年第1期41卷 28-38页

作者： Chao Zhao Bo Xu Zhijie wang zhanguo wang JARA-Fundamentals of Future Information Technology(JARA-FIT)and RWTH Aachen University 52074 AachenGermany Peter Grünberg Institute(PGI-9) Forschungszentrum Jülich52425 JülichGermany Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101804China

Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers,large-area detectors,and so forth.Although heterogeneous integration of III-V semiconductors on Si has been welldeveloped,the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices.The monolithic growth of III-V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers.On the other hand,the growth of lattice-matched B-doped group-III-V materials is an attractive area of research.However,due to the difficulty in growth,the development is still relatively slow.Herein,we present a comprehensive review of the recent achievements in this field.We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III-V materials.The unique surface morphology,crystallinity,and optical properties of the epitaxy correlating with their growth conditions are discussed,along with their respective optoelectronic applications.Finally,we detail the obstacles and challenges to exploit the potential for such practical applications fully.

关键词： BGaAs Si photodetector epitaxy

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Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz

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Journal of Semiconductors 2021年第12期42卷 48-55页

作者： Quan wang Changxi Chen Wei Li Yanbin Qin Lijuan Jiang Chun Feng Qian wang Hongling Xiao Xiufang Chen Fengqi Liu Xiaoliang wang Xiangang Xu zhanguo wang State Key Laboratory of Crystal Materials Shandong University Institute of Novel Semiconductors Shandong University Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering and School of Microelectronics University of Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices

State-of-the-art AIGaN/GaN high electron mobility structures were grown on semi-insulating 4 H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of2291.1 cm~2/(V·s) and two-dimensional electron gas density of 9.954×1012cm-2were achieved at 300 K.The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm.The fT of 30.89 GHz and fmaxof 38.71 GHz were measured on the device.Load-pull measurements were performed and analyzed under(-3.5,28) V,(-3.5,34) V and(-3.5,40) V gate/drain direct current bias in class-AB,respectively.The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56% at 8 GHz when drain biased at(-3.5,28) V.In addition,when drain biased at(-3.5,40) V,the device exhibited a saturation output power density up to 6.21 W/mm at 8 GHz,with a power gain of 11.94 dB and a power-added efficiency of 39.56%.Furthermore,the low fmax/fTratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed.

关键词： AlGaN/GaN heterostructure MOCVD HEMTs power amplifier

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Optical management in organic photovoltaic devices

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Carbon Energy 2021年第1期3卷 4-23页

作者： Cheng Yang Chao Zhao Yang Sun Qicong Li MdRasidul Islam Kong Liu Zhijie wang Shengchun Qu zhanguo wang Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijingChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina

Due to their potentials in light‐weight,flexible,and semitransparent devices,organic photovoltaics are of great significance in the field of renewable energy.However,the narrow intrinsic absorption spectrum of organic materials hinders the full utilization of solar energy.To fabricate a highly efficient opaque solar cell,it is greatly necessary to modify the optical properties of the device to improve light absorption.In addition,the growing interest in building‐integrated photovoltaics drives the development of semitransparent devices.The preparation of semitransparent solar cells with excellent performance imposes high requirements on the high efficiency and appropriate visible light transmittance of effective optical management.In this review,the recent research progress of optical management in organic photovoltaics is reviewed,including the design of light‐absorbing materials,the modification of different layers,adding a lighttrapping structure,and changing the light absorption capabilities of specific materials,so as to provide strategies of how to improve the performance of organic photovoltaic devices and present the prospect of the area.

关键词： light absorption light transmittance light trapping organic photovoltaic devices

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Broad area quantum cascade lasers operating in pulsed mode above 100℃ at λ ～ 4.7 μm

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Journal of Semiconductors 2017年第7期38卷 74-77页

作者： Yue Zhao Fangliang Yan Jinchuan Zhang Fengqi Liu Ning Zhuo Junqi Liu Lijun wang zhanguo wang Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China

We demonstrate a broad area（400 μm） high power quantum cascade laser（QCL）. A total peak power of 62 W operating at room temperature is achieved at λ~ 4.7 μm. The temperature dependence of the peak power characteristic is given in the experiment, and also the temperature of the active zone is simulated by a finite-elementmethod（FEM）. We find that the interface roughness of the active core has a great effect on the temperature of the active zone and can be enormously improved using the solid source molecular beam epitaxy（MBE） growth system.

关键词： high peak power quantum cascade laser interface roughness

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High powerλ~8.5μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

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Journal of Semiconductors 2021年第11期42卷 55-60页

作者： Teng Fei Shenqiang Zhai Jinchuan Zhang Ning Zhuo Junqi Liu Lijun wang Shuman Liu Zhiwei Jia Kun Li Yongqiang Sun Kai Guo Fengqi Liu zhanguo wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Robust quantum cascade laser(QCL)enduring high temperature continuous-wave(CW)operation is of critical importance for some applications.We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition(MOCVD).High interface quality structures designed for light emission at 8.5μm are achieved by optimizing and precise controlling of growth conditions.A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10μm-wide coated laser.Corresponding maximum wall-plug efficiency and threshold current density were 7.1%and 1.18 kA/cm2,respectively.The device can operate in CW mode up to 408 K with an output power of 160 mW.

关键词： quantum cascade laser metal-organic chemical vapor deposition continuous-wave interface roughness

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