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Magnetic Nanocapsules

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Journal of Materials Science & Technology 2007年第1期23卷 1-14页

作者： zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal Research and International Centre for MaterialsPhysics Chinese Academy of Sciences Shenyang 110016 China

A brief review on recent advances in the area of the magnetic nanocapsules is given. The most applicable nanoencapsulation procedures are introduced, which include：（1） physical techniques such as arc-discharge, evaporating, etc.; （2） chemical techniques such as chemical vapor deposition, solid-state reactions, etc. The structure and magnetic properties of various nanocapsules with different core/shell structures are studied in details, for possibly applications in magnetic recording, magnetic refrigerator, magnetic fluids, superconductors and medicine.

关键词： Magnetic Nanocapsules

Molecular Short Range Correlations in Nematic Liquid Crystal Films

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Chinese Physics Letters 1995年第3期12卷 175-178页

作者： zhang zhidong YANG Guochen Department of Mathematics and Physics Hebei Institute of TechnologyTianjin 300130

A generalized functional variation theory of nematics is presented to take account of the local short range correlations between *** theory is used to study nematics liquid crystal *** nematics-isotropic transition temperature is *** orientational order parameter in each molecular layer and the internal energy per molecule associated with each layer are *** numerical results are compared with those of the Monte Carlo simulation and of the mean field theory.

关键词： theory. theory layer

Accurate assignment of double resonant Raman bands in Janus MoSSe monolayer from first-principles calculations

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Journal of Materials Science & Technology 2022年第36期131卷 82-90页

作者： Yujia Pang Jianqi Huang Teng Yang zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaHefei 230026China

Janus transition metal dichalcogenides(TMDs)structures,as a new type of two-dimensional layered materials,have drawn increasing research efforts mostly by the Raman characterization technique since their successful ***-and second-order resonant Raman spectra(RRS)have been reported by ***,unlike much interest paid to the first-order RRS,there has been so far no much discussion dedicated to the second-order double resonant Raman(DRR)bands and band assignments of Janus TMDs,which nevertheless is indispensable but hampered by the difficulty of *** this work,we calculate the DRR spectra of Janus Mo SSe monolayer within the first-principles framework and succeed in achieving accurate assignments of the DRR *** assignments are in agreement with our group theoretical ***,taking advantage of its strain-sensitive feature,we calculate the DRR spectra under biaxial strain,and further verify the rationality of our assignments by analyzing strain-induced shift of the DRR *** present study supplies an efficient strategy for quantitative understanding on the electron-phonon coupling in the Janus structures.

关键词： First-principles calculation Double resonant Raman Raman band assignments Janus MoSSe monolayer

Transport property of topological crystalline insulator SnTe(100)and ferrimagnetic insulator heterostructures

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Journal of Materials Science & Technology 2022年第36期131卷 204-211页

作者： Anqi zhang Daheng Liu Teng Yang Song Ma zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China

Topological crystalline insulator(TCI)SnTe is a potential material for quantum electronic devices because of its attractive inherent sensitivity of band topology and highly mobile characteristic of Dirac *** proximity effect at the interface of SnTe film can affect the topological surface transport and may result in novel quantum magneto-electric ***,we study the magnetoelectrical transport properties of SnTe thin films grown on ferrimagnetic insulators Eu_3Fe_5O_(12)(110)(EuIG(110))and Y_(3)Fe_(5)O_(12)(111)(YIG(111))single-crystal underlayers by molecular beam *** magnetic resistance(LMR)is observed in SnTe/Eu IG heterostructures in the low field range,which is different from the weak antilocalization(WAL)characteristic of SnTe/YIG ***,the double carrier characteristic with the coexistence of holes and electrons in SnTe/Eu IG heterostructure is quite different from the holes as main carriers in SnTe/YIG,although the SnTe layer remains the same crystal plane(100)in the two *** LMR in SnTe/Eu IG is attributed to the topological surface Dirac electrons and disordered domain distribution in the SnTe layer which is in sharp contrast to the WAL of SnTe/YIG with ordered domain distribution in the SnTe *** present studies of transport properties not only provide a fundamental understanding of the transport mechanism of TCI and magnetite insulator heterostructure but also display the promising application probability for tunable topological electronic devices.

关键词： Topological crystalline insulator Ferrimagnetic insulators Linear magnetoresistance Electrical transport Molecular beam epitaxy

Magnetic and magnetotransport properties of single-crystalline R2PdGe6（R = Pr, Gd and Tb）

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Journal of Materials Science & Technology 2019年第5期35卷 764-768页

作者： Lei zhang Weijun Ren Xiaohua Luo zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences Shenyang 110016 China University of Chinese Academy of Sciences Beijing 100039 China Jiangxi Key Laboratory for Rare Earth Magnetic Materials and Devices/lnstitute for Rare Earth Magnetic Materials and Devices Jiangxi University of Science and Technology Ganzhou 341000 China

Single crystals of R2PdGe6 (R=Pr, Gd and Tb) compounds were grown by the Bi-flux method. Pr2PdGe6 is an antiferromagnetic compound with Neel temperature Tn=15K, in which a field-induced magnetic transition (spin flip) occurs when a magnetic field is applied along either a or b axis;a small magnetization and hysteresis loop were observed when a field is applied along c axis. Gd2PdGe6 is a colli near antiferromagnetic compound with Tn=37K along b axis. Tb2PdGe6 is an antiferromagnetic compound with Tn =48 K and its hard magnetization direction is along b axis. The temperature dependences of the resista nee of the entire three compounds prese nt inflection points at the respective Tn-A large resista nee (as well as magnetoresistance) change can be found at the spin flip transition of Pr2 PdGe6, but the change is not obvious at the spin flop transition of Gd2PdGe6.

关键词： R2PdGe6 Single crystal Magnetic properties

Magic angles and flat Chern bands in alternating-twist multilayer graphene system

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Journal of Materials Science & Technology 2022年第16期111卷 28-34页

作者： Zhiyong Liu Wenyuan Shi Teng Yang zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China Western Reserve Academy 115 College Street HudsonOhio 44236United States

Based on the effective continuum model,we study alternating-twist multilayer graphene system and emergence of magic angles and flat band *** the alternating-twist multilayer graphene system(from triple layers to few layers)are found to have flat bands at magic angles where the area of AA stacking equals n-fold(n is an integer)electron cyclotron *** the pseudo-Landau-level representation,there is always an isolated Dirac band in the alternating-twist graphene system constructed by odd number of *** each pair of flat bands can be perceived as the zeroth pseudo-Landau-levels in two dimensional Dirac fermions,electron in the flat band pair can feel a pseudo-magnetic field with the same magnitude but the opposite *** Chern number for each flat band is+1(or-1)which can be tuned by twisting in the vicinity of magic angles or by *** concurrent appearance of strong correlation and band topology of flat bands in the alternating-twist multilayer graphene may pave an avenue for the new understanding of superconductivity observed in triple-layered graphene,and supply a new playground for realizing(quantum)anomalous Hall effect.

关键词： Alternating-twist multilayer graphene Magic angle Flat band Band topology

Structural topology optimization: Extensibility and attainability

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Science China(Technological Sciences) 2014年第7期57卷 1310-1321页

作者： zhang WeiHong zhang zhidong ZHU JiHong GAO Tong Engineering Simulation and Aerospace Computing (ESAC) School of Mechanical Engineering Northwestern Polytechnical University

Extensibility and attainability of topology optimization are discussed by investigating a variety of simultaneous topology opti-mization methods extended from the standard ***,the state of the art is highlighted through systematic classification of developed methods,such as simultaneous topology optimizations of microstructure and macrostructure,structure and supports,structure and design-dependent loads,structure and locations of involved ***,some recent results about simultaneous topology optimization of structure and applied loads are *** is shown that the simultaneous topology optimization is an integrated methodology that extends the concept of standard topology optimization in the sense of systematic *** presence of more than one kind of design variable of different nature makes the optimization problem complex but enlarges the design space to attain the optimization.

关键词： topology optimization simultaneous optimization multi-component support design-dependent load load location

Recent developments of rare-earth-free hard-magnetic materials

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Science China(Physics,Mechanics & Astronomy) 2016年第1期59卷 16-32页

作者： Da Li DeSheng Pan ShaoJie Li zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences

Recent advances in rare-earth-free hard-magnetic materials including magnetic bulk, thin films, nanocomposites and nanostructures are introduced. Since the costs of the rare-earth metals boosts up the price of the high-performance rare-earth permanent magnets, there is a much revived interest in various types of hard-magnetic materials based on rare-earth-free compounds. The 3d transition metals and their alloys with large coercivity and high Curie temperatures(working temperatures) are expected to overcome the disadvantages of rare-earth magnets. Making rare-earth-free magnets with a large energy product to meet tomorrow's energy needs is still a challenge.

关键词： rare-earth-free hard-magnetic phases coercivity magnetic anisotropy magnetic proper-ties of nanostructures

Electrical and optical modulation on ferroelectric properties of P(VDF-TrFE) thin film capacitors

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Journal of Materials Science & Technology 2019年第10期35卷 2194-2199页

作者： Xiaohan Li Biaohong Huang Weijin Hu zhidong zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences(IMRCAS)Shenyang110016China School of Material Science and Engineering University of Science and Technology of China(USTC)Anhui230026China

Modulating the ferroelectric properties of P(VDF-TrFE) polymers both electrically and optically could open up new opportunities for their applications in non-volatile memories and sensors. Here by using the Nb:SrTiO3 semiconductor as electrode compared with metal Au electrode, we report on the modulation of ferroelectric properties of P(VDF-Tr FE) thin film capacitors both by electric field and UV light. A ferroelectric hysteresis loop shift together with the asymmetric switching behavior has been observed when using semiconducting electrode, which could be explained by the band alignment model based on interfacial charge screening. On the basis of band bending near the ferroelectric/semiconductor interface,we could further modulate the ferroelectric switching behaviors reversibly by UV light illumination. Our research provides a new route to engineer the ferroelectric properties of P(VDF-TrFE) polymer thin film capacitors, promising their applications in optoelectronic devices.

关键词： P(VDF-TrFE) Ferroelectric Semiconducting electrode Coercive field Switching dynamics UV-light