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Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors

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Chinese Physics Letters 2011年第6期28卷 305-307页

作者： CHEN Yi-Xin SHEN Guang-Di zhu yan-xu GUO Wei-Ling LI Jian-Jun Optoelectronic Technology Laboratory Beijing University of TechnologyBeijing 100124

A new structure of high-brightness light-emitting diodes(LED)is experimentally *** thin window layer is composed of a 300-nm-thick indium-tin-oxide layer and a 500-nm-thick GaP layer for both current spreading and light *** two coupled distributed Bragg reflectors(DBRs)with one for reflecting normal incidence light and the other for reflecting inclined incidence light which is emitted to the GaAs substrate are employed in the LED *** coupled DBRs in the LED can provide high reflectivity with wide-angle *** efficiency-enhanced AlGaInP LED has the luminance intensity increase of more than 50%compared with conventional LEDs and high reliability with the saturation current 130 mA.

关键词： Efficiency thick reflectivity

Former Thai Prime Minister *** Yongchaiyudh Visits China

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Voice of Friendship 2006年第2期 2-3页

作者： zhu Dan, xu yan

Gen. Chavalit Yongchaiyudh, former Thai prime minister, and his party visited China from January 14 to 17, 2006 at the invitation of the CPAFFC. Jia Qinglin, chairman of the National Committee of the Chinese People’s Political Consultative Conference (CPPCC) and Hui Liangyu, vice premier of the State Council, met with the delegation. Cao Gangchuan, vice chairman of the Central Military Commission and state councillor, Chen Haosu, CPAFFC president, Tian Qiyu, president of the Police Association of China and Liang Shi, vice president of the China Association for International Friendly Contact, met with the delegation and hosted banquets in its honour.

关键词： delegation invitation visited chairman Minister pr

Correlative Factors for Organic Psychotic Symptoms in Pa- tients Following Traumatic Brain Injury

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法医学杂志 2014年第1期30卷 36-40页

作者： HANG Rong-hua xu Ya-jun zhu xu-yan Department of Psychology Wannan Medical College Wuhu 241002 China Department of Forensic Medicine Wannan Medical College Wuhu 241002 China

Objective To investigate the correlative factors for organic psychotic symptoms following traumatic brain injury(TBI). Methods In the current study, 391 subjects who had undergone forensic identification of the organic mental disorders due to TBI were included, both the demographic and post-traumatic information collected. The relevant data were statistically analyzed in those confirmed as organic psychotic syndrome according to Chinese Classification of Mental Disorders 3rd version(CCMD-3). Results Fifty-two subjects(13.3%) were identified as organic psychotic symptoms. The chi-square test showed that the detectable organic psychotic symptoms were associated with the marriage status, damage nature,injury severity and treatment, and the multivariate logistic regression analysis revealed good fitness of treatment and injury severity with the regression model(OR=0.044, 95% CI: 0.017-0.114; OR=2.145,95% CI: 1.201-3.832, respectively). Conclusion The risks of organic psychotic symptoms following TBI can be involved in the alternative of craniotomy for the cases with trauma and moderate brain injury.

关键词： forensic psychiatry brain injuries mental disorder organic psychotic symptoms

Non-coding RNAs in acute ischemic stroke:from brain to periphery

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Neural Regeneration Research 2025年第1期20卷 116-129页

作者： Shuo Li Zhaohan xu Shiyao Zhang Huiling Sun Xiaodan Qin Lin zhu Teng Jiang Junshan Zhou Fuling yan Qiwen Deng Department of Neurology Nanjing First HospitalNanjing Medical UniversityNanjingJiangsu ProvinceChina Department of Neurology Zhongda HospitalSchool of MedicineSoutheast UniversityNanjingJiangsu ProvinceChina General Clinical Research Center Nanjing First HospitalNanjing Medical UniversityNanjingJiangsu ProvinceChina

Acute ischemic stroke is a clinical emergency and a condition with high morbidity,mortality,and *** predictive,diagnostic,and prognostic biomarkers and effective therapeutic targets for acute ischemic stroke remain *** innovations in high-throughput gene sequencing analysis,many aberrantly expressed non-coding RNAs(ncRNAs)in the brain and peripheral blood after acute ischemic stroke have been found in clinical samples and experimental *** expressed ncRNAs in the post-stroke brain were demonstrated to play vital roles in pathological processes,leading to neuroprotection or deterioration,thus ncRNAs can serve as therapeutic targets in acute ischemic ***,distinctly expressed ncRNAs in the peripheral blood can be used as biomarkers for acute ischemic stroke prediction,diagnosis,and *** particular,ncRNAs in peripheral immune cells were recently shown to be involved in the peripheral and brain immune response after acute ischemic *** this review,we consolidate the latest progress of research into the roles of ncRNAs(microRNAs,long ncRNAs,and circular RNAs)in the pathological processes of acute ischemic stroke–induced brain damage,as well as the potential of these ncRNAs to act as biomarkers for acute ischemic stroke prediction,diagnosis,and *** from this review will provide novel ideas for the clinical application of ncRNAs in acute ischemic stroke.

关键词： acute ischemic stroke apoptosis blood–brain barrier damage circular RNAs excitatory toxicity long non-coding RNAs microRNAs neuroinflammation non-coding RNAs oxidative stress

Rock fracture mechanism of buffer blasting with cushion layer at the borehole bottom

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International Journal of Minerals,Metallurgy and Materials 2025年第2期32卷 325-334页

作者： Xinguang zhu Chenxi Ding Zhe Sui Hong Su xu Guo School of Civil and Resources Engineering University of Science and Technology BeijingBeijing 100083China Key Laboratory for Mechanics in Fluid Solid Coupling Systems Institute of MechanicsChinese Academy of SciencesBeijing 100190China School of Mechanics and Civil Engineering China University of Mining and Technology(Beijing)Beijing 100083China School of Chemical and Blasting Engineering Anhui University of Science and TechnologyHuainan 232001China

This study primarily investigates the rock fracture mechanism of bottom cushion layer blasting and explores the effects of the bottom cushion layer on rock *** involves analyses of the evolution patterns of blasting stress,characteristics of crack distribution,and rock fracture features in the ***,blasting model experiments were carried out using the dynamic caustics principle to investigate the influence of bottom cushion layers and initiation methods on the integrity of the bottom rock *** experimental results indicate that the combined use of bottom cushion layers and inverse initiation effectively protects the integrity of the bottom rock ***,the process of stress wave propagation and dynamic crack propagation in rocks was simulated using the continuum-discontinuum element method(CDEM)and the Landau explosion source model,with varying thicknesses of bottom cushion *** numerical simulation results indicate that with increasing cushion thickness,the absorption of energy generated by the explosion becomes more pronounced,resulting in fewer cracks in the bottom rock *** illustrates the positive role of the cushion layer in protecting the integrity of the bottom rock mass.

关键词： bottom cushion layer blasting crack propagation continuum-discontinuum element method dynamic stress intensity factor

Transcatheter closure of perimembranous ventricular septal defects:single centre experience in China

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Chinese Medical Journal 2005年第21期118卷 1838-1842页

作者： LI Tian-chang HU Da-yi BIAN Hong WANG Guo-hong WANG Xian zhu Zheng-yan xu Yu-yun Cardiovascular Centre of Beijing Tongren Hospital Capital University of Medical Sciences Beijing 100730 China

Ventricular septal defect （VSD） is one of the most common congenital heart *** an isolated lesion, it accounts for 20% -30% of patients with congenital heart disease. Eighty percent of these defects are perimembranous involving the membranous septum and the adjacent area of muscular septum. At least 80% of these defects are small and close spontaneously, the larger defects often persist to cause significant shunt and right ventricular hypertension. Although conventional surgical repair of perimembranous ventricular septal defects （PMVSDs） is a safe, widely accepted procedure with negligible mortality. It is associated with morbidity, discomfort and a thoracotomy scar. As an alternative to surgery, a variety of devices for transcatheter closure of VSD have been developed. However, these devices were not specifically designed for this purpose and none has gained wide acceptance. Large delivery sheaths, inability to recapture and reposition, structural failure, dislodgement and embolization of the device, interference with the aortic valve resulting in aortic insufficiency and a high rate of residual shunting are the major limitations of the previously described techniques.

关键词： congenital heart disease ventricular septal defect treatment

GaN HEMT欧姆接触模式对电学特性的影响

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物理学报 2014年第11期63卷 262-266页

作者：朱彦旭曹伟伟徐晨邓叶邹德恕北京工业大学省部共建光电子重点实验室北京100124

本文制备了AlGaN/GaN HEMT器件中常规结构与带有纵向接触孔结构的两种接触电极,研究了该两种源欧姆接触模式对器件电学特性的影响.在相同条件下进行快速退火,发现在750?C下退火30 s后,常规结构还没有形成欧姆接触,而带有纵向欧姆接触孔... 详细信息

本文制备了AlGaN/GaN HEMT器件中常规结构与带有纵向接触孔结构的两种接触电极,研究了该两种源欧姆接触模式对器件电学特性的影响.在相同条件下进行快速退火,发现在750?C下退火30 s后,常规结构还没有形成欧姆接触,而带有纵向欧姆接触孔的接触电极与外延片已经形成了良好的欧姆接触.同时,比较了Ti/Al/Ti/Au和Ti/Al/Ni/Au电极退火后表面形态,Ti/Al/Ni/Au具有更好的表面形貌.通过测试两种结构的HEMT器件后,发现采用纵向欧姆接触孔结构器件具有更高的跨导和饱和电流,但是也会在栅极电压为0.5—2 V之间产生严重的电流崩塌现象.

关键词： AlGaN GaN 高迁移率电子晶体管欧姆接触

ZnO NW栅极GaN HEMT紫外光探测性能

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电子学报 2023年第9期51卷 2510-2516页

作者：朱彦旭谭张杨王晓冬北京工业大学光电子技术教育部重点实验室北京100124 中国人民警察大学警务装备技术学院河北廊坊102308

本文实验采用水热生长法,成功制备了以ZnO纳米线为光感应栅极的高电子迁移率晶体管HEMT(High Electron Mobility Transistor)器件.对HEMT进行源漏(S/D)下刻蚀,刻蚀深度为120/150 nm,探究不同S/D刻蚀深度对器件性能的影响.同时,利用磁控... 详细信息

本文实验采用水热生长法,成功制备了以ZnO纳米线为光感应栅极的高电子迁移率晶体管HEMT(High Electron Mobility Transistor)器件.对HEMT进行源漏(S/D)下刻蚀,刻蚀深度为120/150 nm,探究不同S/D刻蚀深度对器件性能的影响.同时,利用磁控溅射法在栅电极沉积ZnO晶籽层,在80℃温度下控制水热生长时间分别为6/8/10 h,探究不同水热生长时间对ZnO纳米线表面形貌以及HEMT紫外探测性能的影响.结果表明,相较于常规结构器件,ZnO纳米线栅极器件在350~450 nm波长范围内具有更高的光吸收率.同样的水热生长时间下,刻蚀深度为150 nm时源漏饱和电流相较于120 nm器件较小,但黑暗/紫外光照下的饱和电流差值更大,最大达到了8 mA,对紫外光表现出更高的探测效率.水热生长时间控制为6 h时纳米线生长形貌良好,且在该生长时间下刻蚀深度为150 nm时,器件光响应/恢复时间达到了最小值,分别为0.0057 s、2.128 s.

关键词：高电子迁移率晶体管 ZnO纳米线紫外探测光响应

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蒸发速率对ITO光学常数的影响

功能材料 2009年第1期40卷 56-59页

作者：李天璘朱彦旭徐晨高国沈光地北京工业大学电控学院光电子技术实验室北京100124

由于ITO具有复杂的微观结构和吸收机制,很难准确测量出它的光学常数。采用变入射角光度椭偏仪(VASE)建立了一套简单的拟合模型,成功拟合出ITO光学常数在可见光范围内随波长的变化关系。并在此基础上分析了电子束蒸发法蒸发速率对ITO薄... 详细信息

由于ITO具有复杂的微观结构和吸收机制,很难准确测量出它的光学常数。采用变入射角光度椭偏仪(VASE)建立了一套简单的拟合模型,成功拟合出ITO光学常数在可见光范围内随波长的变化关系。并在此基础上分析了电子束蒸发法蒸发速率对ITO薄膜光学常数的影响。根据Hall效应测量了ITO在不同蒸发速率下的载流子浓度,分析了ITO光学常数随蒸发速率增加而增加的机理。

关键词： ITO 椭偏仪电子束蒸发法蒸发速率