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Photogenerated-hole-induced rapid elimination of solid tumors by the supramolecular porphyrin photocatalyst

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National Science Review 2021年第5期8卷 101-109页

作者： Zijian zhang Li Wang Weixu Liu Zihe Yan Yongfa zhu Shuyun Zhou Shanyue Guan department of Chemistry Tsinghua University Key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and ChemistryChinese Academy of Sciences

The rapid, complete, targeted and safe treatment for tumors remains a key issue in cancer therapy. A novel treatment of solid tumors by supramolecular photocatalyst Nano-SA-TCPP with the irradiation of600–700 nm wavelength is established. Solid tumors(100 mm3) can be eliminated within 10 min. The50-day mouse survival rate was increased from 0% to 100% after the photocatalytic therapy. The breakthrough was owing to the cell membrane rupture and the cytoplasmic loss caused by photogenerated holes inside cancer cells. The porphyrin-based photocatalysts can be internalized in a targeted manner by cancer cells due to the size selection effect, without entering the normal cells. The therapy has no toxicity or side effects for normal cells and organisms. Moreover, the photocatalytic therapy is effective for a variety of cancer cell lines. Because of its high efficiency, safety and universality, the photocatalytic therapy provides us with a new lancet to conquer the tumor.

关键词： supramolecular photocatalyst photogenerated holes solid tumor rapid elimination red light

The πh_(11/2) Band-Crossing and Possible Octupole Correlations in ^(122)Ba

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Chinese physics Letters 2001年第8期18卷 1027-1029页

作者： zhu Sheng-Jiang MSakhaee YANG Li-Ming GAN Cui-Yun zhu ling-Yan XU Rui-Qing JIANG zhuo {4. Zheng LONG Gui-Lu WEN Shu-Xian WU Xiao-Guang department of physics Tsinghua UniversityBeijing 100084 China Institute of Atomic Energy Beijing 102413

High-spin states in ^(122)Ba have been investigated in the ^(107)Ag(^(19)F,4.)reaction by in-beamγ-ray spectroscopic *** ground-state band has been observed with spin up to 20ħand a negative-parity band is identified with spin state up to 19ħ.A band-crossing in the yrast band is observed at a rotational frequency of ħω≈0.36 MeV and,in accordance with cranked shell model calculations,is interpreted as arising from the alignment of two h_(11/2) *** E1 transitions between the negative-parity and the yrast bands have been observed,which are proposed as possible evidence for octupole correlations.

关键词： methods parity

Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

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Journal of Materials Science & Technology 2023年第2期133卷 230-237页

作者： ling Tong Xiaojiao Guo zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng Saifei Gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan zhu Xinzhi zhang David Wei zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China College of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface physics and department of physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials Field-effect transistors Schottky barrier Contact resistance

Ultra-sensitive graphene strain sensor for sound signal acquisition and recognition

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Nano Research 2015年第5期8卷 1627-1636页

作者： Yan Wang Tingting Yang Junchao Lao Rujing zhang Yangyang zhang Miao zhu Xiao Li Xiaobei Zang Kunlin Wang Wenjian YU Hu Jin Li Wang Hongwei zhu department of physics and Institute for Advanced Study Nanchang University Nanchang 330031 China center for Nano and Micro Mechanics Tsinghua University Beijing 100084 China School of Materials Science and Engineering State Key Laboratory of New Ceramics and Fine Processing Key Laboratory ot Materials Processing Technology of MOE Tsinghua University Beijing 100084 China department of ComputerScience and Technology Tsinghua University Beijing 100084 China 2D Carbon Graphene Material Co. Ltd. Changzhou 213149 China

A wearable and high-precision sensor for sound signal acquisition and recognition was fabricated from thin films of specially designed graphene woven fabrics （GWFs）. Upon being stretched, a high density of random cracks appears in the network, which decreases the current pathways, thereby increasing the resistance. Therefore, the film could act as a strain sensor on the human throat in order to measure one＇s speech through muscle movement, regardless of whether or not a sound is produced. The ultra-high sensitivity allows for the realization of rapid and low-frequency speech sampling by extracting the signature characteristics of sound waves. In this study, representative signals of 26 English letters, typical Chinese characters and tones, and even phrases and sentences were tested, revealing obvious and characteristic changes in resistance. Furthermore, resistance changes of the graphene sensor responded perfectly with pre-recorded sounds. By combining artificial intelligence with digital signal processing, we expect that, in the future, this graphene sensor will be able to successfully negotiate complex acoustic systems and large quantities of audio data.

关键词： graphene strain sensors sound detectors high sensitivity

Multi-frame speckle reduction in OCT using supercontinuum pumped by noise-like pulses

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Journal of Innovative Optical Health Sciences 2019年第2期12卷 86-92页

作者： Chengming Wang Yi-Jing You Shengnan Ai Wenxin zhang Wenchao Liao Xiao zhang Juicheng Hsieh Ning zhang Bihua Tang Ci-ling Pan Ping Xue State Key Laboratory of Low-Dimensional Quantum physics department of physics Tsinghua University Collaborative Innovation Center of Quantum Matter BeijingP.R.China department of physics National Tsing Hua University No.101Sec.2Kuang-Fu RdHsinchuTaiwan department of physics and Institute of Photonics Technologies National Tsing Hua university Taiwan School of Life Science Beijing Institute of Technology BeijingP.R.China Institute of Forensic Science Ministry of Public Security Beijing P.R.China Southwest Medical university Luzhou Sichuan ProvinceP.R.China Nuctech Company Limited BeijingP.R.China

In most coherent imaging modality,speckle noise is a major cause that blurs the boundary of tissues and degrades the image *** utilizing the unique properties of supercontinuum(SC)generated by noise-like pulses(NLPs)and a simple multi-frame averaging technique,we achieved significant speckle reduction in spectral domain optical coherence tomography(SD-OCT).We quantitatively compared the speckle of our proposed method with those of conventional swept source OCT(SS-OCT)and SD-OCT based on commercial light *** experimental results show that SC pumped by NLPs combined with noncoherent averaging method achieves better denoising performance in terms of contrast to noise ratio(CNR).

关键词： Noise-like pulses supercontinuum generation speckle reduction optical coherence tomography

CEPC Technical Design Report

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Radiation Detection Technology and Methods 2024年第1期8卷 I0003-I0016,1-1091页

作者： Waleed Abdallah Tiago Carlos Adorno de Freitas Konstantin Afanaciev Shakeel Ahmad Ijaz Ahmed Xiaocong Ai Abid Aleem Wolfgang Altmannshofer Fabio Alves Weiming An Rui An Daniele Paolo Anderle Stefan Antusch Yasuo Arai Andrej Arbuzov Abdesslam Arhrib Mustafa Ashry Sha Bai Yu Bai Yang Bai Vipul Bairathi Csaba Balazs Philip Bambade Yong Ban Tripamo Bandyopadhyay Shou-Shan Bao Desmond P.Barber Ayse Bat Varvara Batozskaya Subash Chandra Behera Alexander Belyaev Michele Bertucci Xiao-Jun Bi Yuanjie Bi Tianjian Bian Fabrizio Bianchi Thomas Biekotter Michela Biglietti Shalva Bilanishvili Deng Binglin Denis Bodrov Anton Bogomyagkov Serge Bondarenko Stewart Boogert Maarten Boonekamp Marcello Borri Angelo Bosotti Vincent Boudry Mohammed Boukidi Igor Boyko Ivanka Bozovic Giuseppe Bozzi Jean-Claude Brient Anastasiia Budzinskaya Masroor Bukhari Vladimir Bytev Giacomo Cacciapaglia Hua Cai Wenyong Cai Wujun Cai Yijian Cai Yizhou Cai Yuchen Cai Haiying Cai Huacheng Cai Lorenzo Calibbi Junsong Cang Guofu Cao Jianshe Cao Antoine Chance Xuejun Chang Yue Chang Zhe Chang Xinyuan Chang Wei Chao Auttakit Chatrabhuti Yimin Che Yuzhi Che Bin Chen Danping Chen Fuqing Chen Fusan Chen Gang Chen Guoming Chen Hua-Xing Chen Huirun Chen Jinhui Chen Ji-Yuan Chen Kai Chen Mali Chen Mingjun Chen Mingshui Chen Ning Chen Shanhong Chen Shanzhen Chen Shao-Long Chen Shaomin Chen Shiqiang Chen Tianlu Chen Wei Chen Xiang Chen Xiaoyu Chen Xin Chen Xun Chen Xurong Chen Ye Chen Ying Chen Yukai Chen Zelin Chen Zilin Chen Gang Chen Boping Chen Chunhui Chen Hok Chuen Cheng Huajie Cheng Shan Cheng Tongguang Cheng Yunlong Chi Pietro Chimenti Wen Han Chiu Guk Cho Ming-Chung Chu Xiaotong Chu Ziliang Chu Guglielmo Coloretti Andreas Crivellin Hanhua Cui Xiaohao Cui Zhaoyuan Cui Brunella D'Anzi ling-Yun Dai Xinchen Dai Xuwen Dai Antonio De Maria Nicola De Filippis Christophe De La Taille Francesca De Mori Chiara De Sio Elisa Del Core Shuangxue Deng Wei-Tian Deng Zhi Deng Ziyan Deng Bhupal Dev Tang Dewen Biagio Di Micco Ran Ding Siqin Dingl Yadong Ding Haiyi Dong Jianin AGH university of Science and Technology Faculty of Physics and Applied Computer ScienceKrakow Anhui university HefeiAnhui Applied physics department Federal Urdu University of ArtsScience and TechnologyIslamabad Banaras Hindu university Institute of ScienceVaranasi Bandirma Onyedi Eylul university Bandirma Beihang university Beijing Beijing Computational Science Research center Beijing Beijing Conveyi LTD Beijing Beijing Glass Research Institute Co. LtdBeijing Beijing Institute of Technology Beijing Beijing Normal university Beijing Brown university ProvidenceRI Budker Institute of Nuclear physics Novosibirsk Cadi Ayyad university Laboratory of Fundamental and Applied PhysicsPolydisciplinary FacultyMarrakech Cairo university Giza center for Theory and Computation National Tsing Hua UniversityHsinchu Central China Normal university WuhanHubei Central South university ChangshaHunan Centro de Fisica Teorica de Particulas Universidade Tecnica de LisboaLisboa Chengdu KaitengSifang Digital Radio&TV Equipment Co. LtdChengduSichuan China academy of engineering physics MianyangSichuan China building materials academy Beijing China center of Advanced Science and Technology Beijing China Institute of Atomic Energy Beijing China Jiliang university HangzhouZhejiang China Nuclear Instrument CO. LTDBeijing China university of Geosciences Beijing China university of Geosciences WuhanHubei China university of Mining and Technology XuzhouJiangsu China West Normal university NanchongSichuan Chongqing university Department of PhysicsChongqing Chulalongkorn university Bangkok City university of Hong Kong Department of PhysicsHong Kong Cockcroft Institute Daresbury Cornell university IthacaNY CPPM(AMU/IPhU&CNRS/INP) Marseille Dalian Minzu university DalianLiaoning Dalian university of Technology Department of PhysicsDalian Deutsches Elektronen-Synchrotron DESY Hamburg Dzhelepov Laboratory of Nuclear Problems of Joint Institute for Nuclear Research(DLNP JINR) Dubna East China university Of Science And Technol

The Circular Electron Positron Collider(CEPC)is a large scientific project initiated and hosted by China,fostered through extensive collaboration with international *** complex comprises four accelerators:a 30 GeV Linac,a 1.1 GeV Damping Ring,a Booster capable of achieving energies up to 180 GeV,and a Collider operating at varying energy modes(Z,W,H,and tt).The Linac and Damping Ring are situated on the surface,while the subterranean Booster and Collider are housed in a 100 km circumference underground tunnel,strategically accommodating future expansion with provisions for a potential Super Proton Proton Collider(SPPC).The CEPC primarily serves as a Higgs *** its baseline design with synchrotron radiation(SR)power of 30 MW per beam,it can achieve a luminosity of 5×10^(34.cm^(-2)s^(-1)per interaction point(IP),resulting in an integrated luminosity of 13 ab^(-1)for two IPs over a decade,producing 2.6 million Higgs *** the SR power to 50 MW per beam expands the CEPC's capability to generate 4.3 million Higgs bosons,facilitating precise measurements of Higgs coupling at sub-percent levels,exceeding the precision expected from the HL-LHC by an order of *** Technical Design Report(TDR)follows the Preliminary Conceptual Design Report(Pre-CDR,2015)and the Conceptual Design Report(CDR,2018),comprehensively detailing the machine's layout,performance metrics,physical design and analysis,technical systems design,R&D and prototyping efforts,and associated civil engineering ***,it includes a cost estimate and a preliminary construction timeline,establishing a framework for forthcoming engineering design phase and site selection *** is anticipated to begin around 2027-2028,pending government approval,with an estimated duration of 8 *** commencement of experiments and data collection could potentially be initiated in the mid-2030s.

关键词： initiated exceeding precise

Stacking monolayers at will:A scalable device optimization strategy for two-dimensional semiconductors

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Nano Research 2022年第7期15卷 6620-6627页

作者： Xiaojiao Guo Honglei Chen Jihong Bian Fuyou Liao Jingyi Ma Simeng zhang Xinzhi zhang Junqiang zhu Chen Luo Zijian zhang {4.yi Zong Yin Xia Chuming Sheng Zihan Xu Saifei Gou Xinyu Wang Peng Gong Liwei Liu Xixi Jiang Zhenghua An Chunxiao Cong Zhijun Qiu Xing Wu Peng Zhou Xinyu Chen {4. Tong Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsZhangjiang Fudan International Innovation CenterFudan UniversityShanghai 200433China The Hong Kong Polytechnic university Shenzhen Research Institute Shenzhen 518057China department of physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of MicroFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Shanghai Key Laboratory of Multidimensional Information Processing department of Electronic Engineering East China Normal UniversityShanghai 200241China Shenzhen Six Carbon Technology Shenzhen 518055China department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China

In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral ***,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML *** this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at *** optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer *** stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4. thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

关键词： two-dimensional semiconductor field-effect transistors chemical vapor deposition(CVD)synthesis interlayer coupling vacuum transfer method dual-gate transistor

The promoting effect of interstitial hydrogen on the oxygen reduction performance of PtPd alloy nanotubes for fuel cells

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Nano Research 2023年第2期16卷 2366-2372页

作者： Tingting Chao Xuan Luo Mengzhao zhu Yanmin Hu Yida zhang Yunteng Qu Hantao Peng Xiaoshuang Shen Xusheng Zheng Liang zhang Xun Hong center of Advanced Nanocatalysis(CAN) Department of Applied ChemistryUniversity of Science and Technology of ChinaHefei 230026China Country center for Combustion Energy and School of Vehicle and Mobility Tsinghua UniversityBeijing 100084China National Synchrotron Radiation Laboratory(NSRL) University of Science and Technology of ChinaHefei 230029China department of Chemical physics University of Science and Technology of ChinaHefei 230026China School of Physical Science and Technology Yangzhou UniversityYangzhou 225002China

Highly efficient and stable oxygen reduction reaction(ORR)electrocatalysts are remarkably important but challenging for advancing the large-scale commercialization of practical proton exchange membrane fuel cells(PEMFCs).In this work,we report that the introduction of interstitial hydrogen atoms into PtPd nanotubes can significantly promote ORR performance without scarifying the *** enhanced mass activity was 8.8 times higher than that of commercial Pt/*** accelerated durability test showed negligible activity attenuation after 30,000 ***,H2/O2 fuel cell tests further verified the excellent activity of PtPd-H nanotubes with a maximum power density of 1.32 W·cm^(−2),superior to that of commercial Pt/C(1.16 W·cm^(−2)).Density functional theory calculations demonstrated the incorporation of hydrogen atoms gives rise to the broadening of Pt d-band and the downshift of d-band center,which consequently leads to the weaker intermediates binding and enhanced ORR activity.

关键词： hydrogen atoms incorporation alloy d-band structure regulation oxygen reduction reaction fuel cell

Recent progress of integrated circuits and optoelectronic chips

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Science China(Information Sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng zhang Xiaohua MA zhangming zhu Xingxing GUO Yahui zhang Yanan HAN Ziwei SONG Yan LIU {4. YANG Hong ZHOU Jiangyi SHI Wei zhang Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian zhu Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong zhang Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS center for Excellence and Synergetic Innovation center in Quantum Information and Quantum physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore’s law" in the past 60 years, and now has entered the post Moore’s law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic photonic neural computing