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检索条件"作者=ZHU Kaigui 1, SHI Jianzhong 1, WEI Yanfeng 2.and ZHANG Lide 1 1. institute of solid {2. physics, chinese academy of Science, Hefei 2.0031, china"
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Preparation of InSb nanocrystals embedded in SiO_2.thin films
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chinese {1. Bulletin 1998年 第19期43卷 1610-1615页
作者: zhu kaigui 1, shi jianzhong 1, {2. yanfeng 2.and zhang lide 1 1. institute of solid State physics, chinese academy of science, hefei 2.0031,{12. 2. State Key Laboratory of Surface physics, Fudan University, Shanghai 2.0433,{12. institute of {1. State {2. Chinese Academy of Science Hefei China State Key Laboratory of Surface physics Fudan University Shanghai China
InSb nanocrystals embedded in SiO 2.thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO-2.matri... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Preparation and optical absorption of InAs nanocrystal-embedded thin films
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chinese {1. Bulletin 1999年 第3期44卷 210-214页
作者: jianzhong {1. {2. zhu weiguo Yao Juhui Jia Zhixiang Cheng lide zhang Acad Sinica Inst Solid State Phys Hefei 230031 Peoples R China Suzhou Univ Dept Phys Suzhou 215006 Peoples R China
InAs-SiO2.nanocrystal-embedded films were prepared by using radio-frequency cosputtering. The growth behavior of InAs in the composite film has been studied by a transmission electron microscope. It has been found tha... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论