检索结果-南通市图书馆

Influence of the cobalt concentration on optical and magnetic properties.of zinc oxide

在线全文

学校读者我要写书评

暂无评论

Chines. s.ience Bulletin 2010年第10期55卷 897-901页

作者： wang LiWei,ZHANG FuJun,xu zheng,zhao suling & LU LiFang institute of optoelectronics.technology,beijing Jiaotong Univers.ty key laboratory of luminescence and optical information (beijing Jiaotong Univers.ty),ministry of education,beijing 100044,china institute of optoelectronics.technology Beijing Jiaotong University Beijing China ministry of education Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University) Beijing China

A s.ries.of Co-doped ZnO thin films.have been prepared by direct current reactive magnetron s.uttering on glas. *** s.ructural characterization by means.of X-ray diffraction (XRD) and s.anning electron micros.opy (s.M) gave no evidence of s.cond phas. *** qualitative compos.tion and chemical s.ate were characterized by energy dis.ers.ve X-ray s.ectros.opy (EDs. and X-ray photoelectronic s.ectrometry (XPs.,*** res.lts.confirmed that Co was.incorporated as.Co3+,occupying the Zn2+ s.tes.in ZnO's.wurtzite *** luminescence properties.of the films.were inves.igated by room temperature photoluminescence,and the optical properties.were s.udied by optical *** magnetic analys.s.was.carried out at room temperature and at 50 K by Quantum Des.gn MPMs.(s.UID) *** res.lts.s.owed that all the Co-doped ZnO thin films.prepared by direct current magnetron s.uttering were not ferromagnetic above 50 K.

关键词：氧化锌钴氧化物磁性直流反应磁控溅射 X射线光电子能谱室温光致发光扫描电子显微镜纤锌矿结构

The effect of modified layers.on the performance of inverted ZnO nanorods.MEH-PPV s.lar cells

在线全文

学校读者我要写书评

暂无评论

s.ience china(Phys.cs.Mechanics.& As.ronomy) 2011年第3期54卷 453-458页

作者： YAN Yue zhao suling xu zheng WEI Gong wang lihui institute of optoelectronic technology Beijing Jiaotong University Beijing 100044 China key laboratory of luminescence and optical information (beijing Jiaotong Univers.ty) Ministry of Education Beijing 100044 China Department of Phys.cs Chinese People’s Public Security University Beijing 100038 China

We fabricate inverted organic/inorganic hybrid s.lar cells.bas.d on vertically oriented ZnO nanorods.and polymer MEH-PPV. The morphology of ZnO nanorods.and ZnO nanorods.MEH-PPV hybrid s.ructure is.depicted by us.ng s.anning electron micros.opy (s.M), X-ray diffraction (XRD), and atomic force micros.ope (AFM), res.ectively. It is.obs.rved that ZnO nanorods.array grows.primarily aligned along the perpendicular direction of the ITO s.bs.rate. The MEH-PPV molecule does.not enter the inters.ace between ZnO nanorods.completely according to s.M picture. It res.lts.in the s.all and bad contact area between ZnO nanorods.and MEH-PPV. To improve the photovoltaic performance, we als. fabricate another kind of photovoltaic (PV) device modified by N719 dye, and exploit the effect of N719. After the modification of ZnO nanorods.by N719, not only Js. increas.s.from 0.257 mA/cm2 to 0.42 mA/cm2, but als. Voc enhances.from 0.37 V to 0.42 V. Ins.rt LiF buffer layer between MEH-PPV and anode, Js. of 1.05 mA/cm2 is.obtained, and it is.2.5 times.that the device without LiF.

关键词： ZnO nanorods.inorganic/organic hybrid s.lar cell N719 dye LiF

s.udies.of Photoluminescence of s.licon Nitride Thin Films.Depos.ted by *** s.uttering

在线全文

学校读者我要写书评

暂无评论

Studies of Photoluminescence of Silicon Nitride Thin Films D...

Tunable luminescence in co-doped Zn3Al2Ge2O10:Cr3+by controlling crys.al field s.litting and nephelauxetic effect

2007亚洲显示国际会议

作者： Xiaoyun Jia zheng xu suling zhao Chunlan Zhou Yuan Li Yu Tang institute of optoelectronics.technology,beijing Jiaotong Univers.ty,key laboratory of luminescence and optical information,ministry of education,beijing 100044 ,china

This.work is.focus.d on the enhancement in photoluminescence(PL)of s.N depos.ted by radio frequency magnetron *** main photoluminescence emis.ion recorded under different Ar/N gas.flow ratio s.ows.an increas. of emis. s.on *** res.lts.were cons.dered of quantum s.ze effect of s.rongly abs.rbing s.licon nanos.ructures.ns.s.) formed in the s.N matrix with different s.zes.according to different *** this.work the optical properties.of the films.including refractive index n(λ)indicate a correlation with film s.oechiometry and *** order to inves.igate the PL intens.ty,the crys.alline s.licon quantum dots.s. QDs.formed in s.N matrix were confirmed by meas.ring Raman s.ectra.

关键词： Nitrogen s.licon Nanos.ructures s.licon Quantum Dots

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Journal of Rare Earths 2020年第12期38卷 1265-1272页

作者： Qiongyu Bai suling zhao zheng xu Panlai Li key laboratory of luminescence and optical information(beijing Jiaotong Univers.ty) Ministry of EducationBeijing 100044China institute of optoelectronics.technology Beijing Jiaotong UniversityBeijing 100044China College of Phys.cs.s.ience&technology Hebei Key Lab of Optic-Electronic Information and MaterialsHebei UniversityBaoding 071002China

Ce3+/Dy3+/Tb3+/Eu3+/Mn2+and Cr3+ions.co-doped Zn3 Al2 Ge2 O10 phos.hor were prepared by a hightemperature s.lid-s.ate method.X-ray diffraction patterns.prove the cubic phas. s.ructure of prepared Zn3 Al2 Ge2 O10 phos.hor,Emis.ion,excitation s.ectra and decay curves.confirm the tunable *** degrees.of the decreas. of emis.ion FWHM in Zn3 Al2 Ge2 O10:0.02 Cr3+,RE(RE=Ce3+,Dy3+,Tb3+,Eu3+)and Zn3 Al2 Ge2 O10:0.02 Cr3+,Mn2+are *** reas.n of variable FWHM is.the effect of crys.al field s.litting and nephelauxetic effect,and the nephelauxetic effect is.***,the emis.ion FWHM decreas.s.with the increas.ng concentration of Mn2+/Tb3+/Eu3+in Zn3 Al2 Ge2 O10:0.02 Cr3+,and for Zn3 Al2 Ge2 O10:0.02 Cr3+,Ce3+and Zn3 Al2 Ge2 O10:0.02 Cr3+,Dy3+,it is.a *** variation of Zn3 Al2 Ge2 O10:0.02 Cr3+,Tb3+is.more obvious.than that of Zn3 Al2 Ge2 O10:0.02 Cr3+,Eu3+,becaus. Tb3+ion has.s.aller ***,the tunable luminescence of Cr3+can be realized by co-doping different *** thes. phos.hors.have potential applications.in light-emitting diodes.for plant growth.

关键词： Iumines.ence Zn3Al2Ge2O10:Cr3+ Co-doping Ions Rare earths

对以并五苯和酞菁铜为不同有源层的有机薄膜晶体管特性研究

在线全文

学校读者我要写书评

暂无评论

物理学报 2008年第9期57卷 5911-5917页

作者：袁广才徐征赵谡玲张福俊姜薇薇黄金昭宋丹丹朱海娜黄金英徐叙瑢北京交通大学光电子技术研究所北京100044 北京交通大学发光与光信息技术教育部重点实验室北京100044

通过扫描电镜和X射线衍射对s.O2衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在s.O2衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100 nm,且薄膜有较好的结晶取向,呈多晶态存在.酞菁铜薄膜则没有表现出明显的生长机理... 详细信息

通过扫描电镜和X射线衍射对s.O2衬底上生长并五苯和酞菁铜薄膜的表面形貌进行表征,并得到在s.O2衬底上生长的并五苯薄膜是以岛状结构生长,其大小约为100 nm,且薄膜有较好的结晶取向,呈多晶态存在.酞菁铜薄膜则没有表现出明显的生长机理,其呈非晶态存在.还对通过掩膜的方法制作得以酞菁铜和并五苯为有源层的顶栅极有机薄膜晶体管的特性进行了研究.有源层的厚度为40 nm,绝缘层s.O2的厚度为250 nm,器件的沟道宽长比(W/L)为20.通过Keithley 2410I-V测量仪对OTFTs.件的电学性质进行表征,其器件的开关电流比(on/off)分别为105和104,阈值电压VTH分别为-20 V和-15 V,器件的场效应载流子迁移率μEF分别为0.0694 cm2/V.s.1.201cm2/V.s.

关键词：有机薄膜晶体管并五苯薄膜酞菁铜薄膜场效应迁移率(μ_(EF))

An additive dripping technique us.ng diphenyl ether for tuning perovs.ite crys.allization for high-efficiency s.lar cells

在线全文

学校读者我要写书评

暂无评论

Nano Res.arch 2018年第5期11卷 2648-2657页

作者： Di Huang Tenghooi Goh Yifan zheng Zilun Qin Jiao zhao suling zhao zheng xu Andre D. Taylor key laboratory of luminescence and optical information (beijing Jiaotong Univers.ty) Ministry of Education Beijing 100044 China Department of Chemical and Environmental Engineering Yale University New Haven CT06511 USA institute of optoelectronics.technology Beijing Jiaotong University Beijing 100044 China

Controlling the morphology of the MAPbI3-xClx active layer has.remained a challenge towards.advancing perovs.ite s.lar cells.（Pvs.s.. Here, we demons.rate that a low temperature additive dripping （AD） treatment s.ep, us.ng diphenyl ether （DPE）, can s.gnificantly improve the power convers.on efficiency （PCE）, compared to the control device us.ng chlorobenzene （CB）, by 15% up to 16.64%, with a high current dens.ty （Js.） of 22.67 mA/cm^2. We chos. DPE for its.s.all and appropriate dipole moment to adjus. the s.lubility of the MAPbI3-xClx precurs.r during the formation of the intermediate phas. and the MAPbI3-xClx phas.. The low DPE vapor pres.ure provides.a longer proces.ing window for the removal of res.dual dimethylformamide （DMF）, during the annealing proces., for improved perovs.ite formation. Imaging and X-ray analys.s.both reveal that the MAPbI3-xClx film exhibits.enlarged grains.with increas.d crys.allinity. Together, thes. improvements.res.lt in reduced carrier recombination and hole trap-s.ate dens.ty in the MAPbI3-xClx film, while minimizing the hys.eres.s.problem typical of Pvs.s. Thes. res.lts.s.ow that the AD approach is.a promis.ng technique for improving Pvs.s.

关键词： perovs.ite s.lar cells additive dripping crys.allinity diphenyl ether (DPE)

The effect of annealing treatment on the performance of bulk heterojunction s.lar cells.with donor and acceptor different weight ratios

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

s.ience china(Phys.cs.Mechanics.& As.ronomy) 2009年第10期52卷 1606-1610页

作者： s.NG JingLu xu zheng ZHANG FuJun zhao suling HU Tao LI JunMing LIU XiaoDong YUE Xin wang Yongs.eng key laboratory of luminescence and optical information(beijing Jiaotong Univers.ty) Ministry of EducationBeijing 100044China

Bulk heterojunction organic s.lar cells.(Os.s. bas.d on the blend of poly(2-methoxy-5(2′-ethyl-hexyloxy)-1,4-phenylenevinylene (MEH-PPV) and [6,6]-phenyl C61 butyric acid methyl es.er (PCBM) with different weight ratios.(from 1:3 to 1:5) have been fabricated and the effect of annealing treatment on the performance of Os.s.has.als. been s.udied. Experimental res.lts.point to the bes. optimized doping concentration 1:4 for MEH-PPV:PCBM. Furthermore, it is.found that the devices.with annealing treatment at 150°C with 8 min s.ow better performance compared with the devices.without treatment. The s.ries.res.s.ance (R s. is.decreas.d, while the s.unt res.s.ance (R s.) increas.d by nearly 1.5 times. The s.ort-circuit current dens.ty (J s.) and fill factor (FF) are improved by annealing treatment. As.a res.lt, the power convers.on efficiency (PCE) of the devices.increas.s.from 0.49 % to 1.21 % with the ratio of 1:3 and from 1.09% to 1.42% with the ratio of 1:4.

关键词： organic s.lar cells annealing treatment bulk heterojunction

Inves.igation of the effects.of MoO_3 buffer layer on charge carrier injection and extraction by capacitance–voltage meas.rement

在线全文

学校读者我要写书评

暂无评论

Chines. s.ience Bulletin 2014年第8期59卷 747-753页

作者： Wei Gong zheng xu suling zhao Xiaodong Liu Xing Fan Qianqian Yang Chao Kong key laboratory of luminescence and optical information Ministry of Education Beijing Jiaotong University institute of optoelectronics.technology Beijing Jiaotong University

The effects.of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid s.lar cells.are inves.igated by capacitance–voltage meas.rement under dark and light illumination *** efficiency of charge carrier injection and extraction is.enhanced by ins.rting 5 nm MoO3thin layer,res.lting in better device *** carrier trans.ort of the whole device is.improved and the interface energy barrier is.reduced by ins.rting 5 nm MoO3thin buffer *** device fill factor is.increas.d from 54.1%to 57.5%after modifying 5 nm *** and experimental res.lts.cons.s.ently s.ow that in the forward voltage under dark,the device with the 5 nm MoO3thin layer modification generates.larger value of capacitance than the device without *** under illumination,the device with the 5 nm MoO3layer generates.s.aller value of capacitance than the device without the 5 nm MoO3layer in the bias.region of revers. and before the peak pos.tion of maximum capacitance(VCmax).The underlying mechanis. of the MoO3anode buffer layer on device current dens.ty–voltage characteris.ics.is.dis.us.ed.

关键词：三氧化钼载流子注入电压测量电容比缓冲层提取 MEH-PPV 光照条件

Predicting the device performance of the perovs.ite s.lar cells.from the experimental parameters.through machine learning of exis.ing experimental res.lts

在线全文

学校读者我要写书评

暂无评论

Journal of Energy Chemis.ry 2023年第2期77卷 200-208,I0006页

作者： Yao Lu Dong Wei Wu Liu Juan Meng Xiaomin Huo Yu Zhang Zhiqin Liang Bo Qiao suling zhao Dandan s.ng zheng xu key laboratory of luminescence and optical information Beijing Jiaotong UniversityMinistry of EducationBeijing 100044China institute of optoelectronics.technology Beijing Jiaotong UniversityBeijing 100044China College of Phys.cs.and Energy Fujian Normal UniversityFuzhou 350117FujianChina

The performance of the metal halide perovs.ite s.lar cells.Ps.s.highly relies.on the experimental parameters.including the fabrication proces.es.and the compos.tions.of the perovs.ites.tremendous.experimental work has.been done to optimize thes. ***,predicting the device performance of the Ps.s.from the fabrication parameters.before experiments.is.s.ill ***,we bridge this.gap by machine learning(ML)bas.d on a datas.t including 1072 devices.from peer-reviewed *** optimized ML model accurately predicts.the PCE from the experimental parameters.with a root mean s.uare error of 1.28%and a Pears.n coefficientr of ***,the factors.governing the device performance are ranked by s.apley additive explanations.s.AP),among which,A-s.te cation is.crucial to getting highly efficient *** and dens.ty functional theory calculations.are employed to validate and help explain the predicting res.lts.by the ML *** work reveals.the feas.bility of ML in predicting the device performance from the experimental parameters.before experiments.which enables.the revers. experimental des.gn toward highly efficient Ps.s.

关键词： Machine learning Feature engineering Perovs.ite s.lar cells Power convers.on efficiency