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Development of in situ characterization techniques in molecular beam epitaxy

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Journal of Semiconductors 2024年第3期45卷 9-32页

作者： Chao Shen Wenkang Zhan Manyang Li Zhenyu Sun Jian Tang Zhaofeng Wu Chi Xu Bo Xu Chao Zhao zhanguo wang Laboratory of Solid State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101804China School of Physics Science and Technology Xinjiang UniversityUrumqi 830046China School of New Energy and Electronics Yancheng Teachers UniversityYancheng 224002China Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE *** recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization *** techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled *** combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive *** review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science *** addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

关键词： epitaxial growth thin film in situ characterization molecular beam epitaxy(MBE)

Strategies on designing multifunctional surfaces to prevent biofilm formation

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Frontiers of Chemical Science and Engineering 2015年第3期9卷 324-335页

作者： Yang Lu zhanguo Yue Wei wang Zhiqiang Cao Department of Chemical Engineering and Materials Science Wayne State University Detroit MI 48202 USA

Bacteria adhesion and biofilm formation have raised severe problems on public health, food industry and many other areas. A variety of reagents and surface coatings have been developed to kill bacteria and/or limit their interaction with surfaces. It has also attracted many efforts to integrate different bactericidal elements together and maximize antibacterial efficiency. Herein, we review mechanisms for both passive and active approaches to resist and kill bacteria respectively, and discuss integrated strategies based on these two approaches. We also offer perspective on future research direction.

关键词： antimicrobial surface multifunctional

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人间布鲁氏菌病的治疗策略

中华地方病学杂志 2024年第2期43卷 152-156页

作者：戴立波丁海涛杨宏昕李文妍王占国内蒙古自治区人民医院药学处呼和浩特010017 内蒙古自治区人民医院临床检验医学中心呼和浩特010017

布鲁氏菌病(布病)是由布鲁氏菌感染引起的人畜共患传染病,迄今为止动物间布病尚未根除,且缺乏安全有效的人体疫苗,因此,"早期、联合、足量、足疗程"的药物治疗仍然是人间布病管理中的重要策略。布病治疗目标为缓解和缩短症状期,减少并发... 详细信息

布鲁氏菌病(布病)是由布鲁氏菌感染引起的人畜共患传染病,迄今为止动物间布病尚未根除,且缺乏安全有效的人体疫苗,因此,"早期、联合、足量、足疗程"的药物治疗仍然是人间布病管理中的重要策略。布病治疗目标为缓解和缩短症状期,减少并发症,防止复发以及转为慢性等。目前,尽管抗感染治疗对于大部分患者效果良好,但仍有一部分患者发生治疗失败或后期复发等情况,因此,布病的治疗策略亟待优化。本文阐述了布病治疗原则、临床治疗现状及未来发展趋势,以期为优化布病药物治疗方法提供参考。

关键词：布鲁氏菌病抗感染治疗策略抗菌药物

膳食模式对社区管理2型糖尿病患者血糖控制影响的研究

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中华流行病学杂志 2024年第2期45卷 242-249页

作者：雷丽云秦莉王占国王君赵群姬超琴陈波张庆军周芳武鸣周金意王文绢中国疾病预防控制中心慢性非传染性疾病预防控制中心肥胖与代谢性疾病防控室北京100050 北京市公共卫生应急管理中心监测预警科北京100053 廊坊经济技术开发区卫生监督所廊坊065001 中国疾病预防控制中心环境与健康相关产品安全所环境与人群健康重点实验室北京100021 北京市通州区疾病预防控制中心传染病与地方病控制科北京101100 北京市通州区疾病预防控制中心慢性病防治科北京101100 中国疾病预防控制中心慢性非传染性疾病预防控制中心重点慢病防控实验室北京100050 湖北省疾病预防控制中心慢性非传染性疾病防治所武汉430079 江苏省疾病预防控制中心慢性非传染病防制所南京210009

目的了解膳食对社区管理2型糖尿病(T2DM)患者血糖控制的影响,为实施针对糖尿病患者的防治策略和措施提供依据。方法于2015年在常熟市和武汉市随机抽取8个社区,对进行社区管理的T2DM患者进行问卷调查、身体测量和血糖检测。研究采用因子... 详细信息

目的了解膳食对社区管理2型糖尿病(T2DM)患者血糖控制的影响,为实施针对糖尿病患者的防治策略和措施提供依据。方法于2015年在常熟市和武汉市随机抽取8个社区,对进行社区管理的T2DM患者进行问卷调查、身体测量和血糖检测。研究采用因子分析获得膳食模式。并分别以FPG、餐后2 h血糖控制是否达标为因变量,进行非条件多因素logistic回归分析影响因素。结果最终共纳入1818名T2DM患者,患者FPG控制率为57.59%(95%CI:55.30%~59.86%),餐后2 h血糖控制率为24.90%(95%CI:22.93%~26.91%);因子分析得到5种膳食模式:动物性食物模式、水果-水产-薯类模式、蔬菜-谷物模式、蛋-奶-豆模式和油盐模式。非条件多因素logistic回归分析显示,调整其他因素后,FPG达标概率降低与动物性食物模式(OR=0.71,95%CI:0.52~0.98)、水果-水产-薯类模式(OR=0.71,95%CI:0.51~0.97)相关,餐后2 h血糖达标概率降低与水果-水产-薯类模式(OR=0.60,95%CI:0.40~0.90)相关,FPG和餐后2 h血糖达标概率增加均与蔬菜-谷物模式(OR=1.41,95%CI:1.03~1.94;OR=1.68,95%CI:1.13~2.51)、蛋-奶-豆模式(OR=1.75,95%CI:1.25~2.46;OR=1.56,95%CI:1.00~2.42)有关。与蛋-奶-豆模式Q4组相比,膳食模式组合(水果-水产-薯类模式Q4组、蔬菜-谷物模式Q2组、蛋-奶-豆模式Q3组)FPG控制达标可能性更高(OR=6.79,95%CI:1.15~40.23,P=0.035);与蔬菜-谷物模式Q4组相比,膳食模式组合(水果-水产-薯类模式Q4组、蔬菜-谷物模式Q3组、蛋-奶-豆模式Q2组、油盐模式Q2组)餐后2 h血糖控制达标可能性更高(OR=12.78,95%CI:1.26~130.05,P=0.031)。结论搭配得当的膳食模式及膳食模式组合更有利于武汉市和常熟市社区管理T2DM患者的FPG和餐后2 h血糖控制,应加强患者营养教育,提高患者食物搭配能力。

关键词：糖尿病,2型膳食模式血糖控制

Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires

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Journal of University of Science and Technology Beijing 2007年第4期14卷 341-344页

作者： Yuanli wang Hua Cui Wen Lei Yahong Su Yonghai Chen Ju Wu zhanguo wang Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Materials Science and Engineering School University of Science and Technology Beijing Beijing 100083 China China Metallurgical Information and Standardization Research Institute Beijing 100730 China

The influence of InAs deposition thickness on the structural and optical properties of InAs/InA1As quantum wires （QWR） superlattices （SLS） was studied. The transmission electron microscopy （TEM） results show that with increasing the InAs deposited thickness, the size uniformity and spatial ordering of InAs QWR SLS was greatly improved, but threading dislocations initiated from InAs nanowires for the sample with 6 monolayers （MLs） InAs deposition. In addition, the zig-zag features along the extending direc- tion and lateral interlink of InAs nanowires were also observed. The InAs nanowires, especially for the first period, were laterally compact. These structural features may result in easy tunneling and coupling of charge carders between InAs nanowires and will hamper their device applications to some extent. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs, and for suppressing the formation of the threading dislocations in InAs QWR SLS.

关键词： quantum wire molecular beam epitaxy optical properties nanostructures transmission electron microscope

Engineering the photoelectrochemical behaviors of ZnO for efficient solar water splitting

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Journal of Semiconductors 2020年第9期41卷 17-29页

作者： Mengmeng Ma Yanbin Huang Jun Liu Kong Liu Zhijie wang Chao Zhao Shengchun Qu zhanguo wang Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Mathematical Science and Engineering Hebei University of EngineeringHandan 056038China

Solar water splitting is a promising strategy for the sustainable production of renewable hydrogen and solving the world’s crisis of energy and *** third-generation direct bandgap semiconductor of zinc oxide(ZnO)with properties of environmental friendliness and high efficiency for various photocatalytic reactions,is a suitable material for photoanodes because of its appropriate band structure,fine surface structure,and high electron ***,practical applications of ZnO are usually limited by its high recombination rate of photogenerated electron–hole pairs,lack of surface reaction force,inadequate visible light response,and intrinsic *** the lack of review on ZnO’s application in photoelectrochemical(PEC)water splitting,this paper reviews ZnO’s research progress in PEC water *** commences with the basic principle of PEC water splitting and the structure and properties of ***,we explicitly describe the related strategies to solve the above problems of ZnO as a photoanode,including morphology control,doping modification,construction of heterostructure,and the piezo-photoelectric enhancement of *** review aims to comprehensively describe recent findings and developments of ZnO in PEC water splitting and to provide a useful reference for the further application and development of ZnO nanomaterials in highly efficient PEC water splitting.

关键词： ZnO photoelectrochemical water splitting photoanode

Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

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Journal of Semiconductors 2020年第12期41卷 1-6页

作者： Dandan Ning Yanan Chen Xinkun Li Dechun Liang Shufang Ma Peng Jin zhanguo wang Institute of Atomic and Molecular Science Shaanxi University of Science and TechnologyXi’an 710021China Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Institute of Aerospace Control Instruments Beijing 100039China

Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the opticalperformance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTAtreatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with theas-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at800 ℃. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treatedInAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL)and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.

关键词： quantum dots rapid thermal annealing photoluminescence spectral width

Boron-doped Ⅲ–Ⅴ semiconductors for Si-based optoelectronic devices

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Journal of Semiconductors 2020年第1期41卷 28-38页

作者： Chao Zhao Bo Xu Zhijie wang zhanguo wang JARA-Fundamentals of Future Information Technology(JARA-FIT)and RWTH Aachen University 52074 AachenGermany Peter Grünberg Institute(PGI-9) Forschungszentrum Jülich52425 JülichGermany Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101804China

Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers,large-area detectors,and so *** heterogeneous integration of III-V semiconductors on Si has been welldeveloped,the thermal dissipation issue and the complicated fabrication process still hinders the development of these *** monolithic growth of III-V materials on Si has also been demonstrated by applying complicated buffer layers or *** the other hand,the growth of lattice-matched B-doped group-III-V materials is an attractive area of ***,due to the difficulty in growth,the development is still relatively ***,we present a comprehensive review of the recent achievements in this *** summarize and discuss the conditions and mechanisms involved in growing B-doped group-III-V *** unique surface morphology,crystallinity,and optical properties of the epitaxy correlating with their growth conditions are discussed,along with their respective optoelectronic ***,we detail the obstacles and challenges to exploit the potential for such practical applications fully.

关键词： BGaAs Si photodetector epitaxy

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

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Chinese Science Bulletin 2002年第21期47卷 1780-1782页

作者： ZHANG Xiulan ZHANG Fuqiang SONG Shulin CHEN Nuofu wang zhanguo LIN Lanying Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China National Microgravity Laboratory of Chinese Academy of Sciences Institute of MechanicsBeijing 100080China

Depth profiles of carrier concentrations in Ga-MnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

关键词： electrochemistry C-V magnetic semiconductor GaMnSb.